Thursday, September 18, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
AT&T Launches High-speed U-verse Service for Businesses
AMD Moves Closer To The Introduction Of Project FreeSync Monitors
Ericsson to Shut Modem Business
VIA Launches ARTiGO A900 Android System For IoT and M2M Deployments
Amazon Purchases .buy Domain for 4.6 Million Dollars
Toshiba to Develop New Transistor Series Using Latest Process Technology
Samsung Now Mass Producing 20-Nanometer 6Gb LPDDR3 Mobile DRAM
Samsung Introduces 27-inch S27D590C Curved Monitor
Active Discussions
Yamaha CRW-F1UX
help questions structure DVDR
Made video, won't play back easily
Questions durability monitor LCD
Questions fungus CD/DVD Media, Some expert engineer in optical media can help me?
CD, DVD and Blu-ray burning for Android in development
IBM supercharges Power servers with graphics chips
Werner Vogels: four cloud computing trends for 2014
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Friday, May 09, 2014
Samsung Has Started 3D V-NAND Production In Chinese Facility


Samsung Electronics has started operating its 3D V-NAND memory fabrication line in Xi'an China in full-scale.

Construction of the new manufacturing facility took 20 months since Samsung broke ground here in September, 2012. The total area of the facility is approximately 230,000 square meters, situated on 1.14 million square meters of land.

Samsung Vice Chairman and CEO Dr. Oh-Hyun Kwon hosted a plant inauguration event, which welcomed a large number of attendees including Chinese government dignitaries.

By commencing operations of its Xi'an fabrication line, Samsung has secured a solid memory production base in China, a market where approximately 50 percent of global NAND flash is generated from production bases operated by many IT companies here.

Samsung's three-dimensional (3D) Vertical NAND (V-NAND) flash memory will be used for a wide range of consumer electronics and enterprise applications, including embedded NAND storage and solid state drives (SSDs). It offers a 128 gigabit (Gb) density in a single chip, utilizing the company's proprietary vertical cell structure based on 3D Charge Trap Flash (CTF) technology and vertical interconnect process technology to link the 3D cell array. By applying both of these technologies, Samsung's 3D V-NAND is able to provide over twice the scaling of 20nm-class planar NAND flash.

Samsung plans to complete construction of its entire Xi'an complex, which includes an assembly facility and test line, by the end of this year.




Previous
Next
Apple To Buy Beats For $3.2 billion        All News        Nvidia Details Financial Results For First Q Fiscal 2015
Chinese Xiaomi To Enter The Tablet Market     PC Parts News      IBM Develops Ultra-fast Phase Change Memory System

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Now Mass Producing 20-Nanometer 6Gb LPDDR3 Mobile DRAM
New Samsung NX1 Launches With APS-C backside-illuminated CMOS
Korean Authorities To Inverstigate LG-Samsung Dispute
Samsung Open Source Conference Kicks off Tuesday
Diesel Black Gold Introduces Custom Samsung Gear S at Runway Show
Samsung Outlines Its Vision for the Future Home At IFA 2014
Samsung Launches Tizen Wearable SDK for Gear S
Samsung Galaxy Tab Active Announced At IFA
Samsung Goes Curvy At IFA 2014
Samsung Partners With Oculus On Gear VR, Announces Galaxy Note 4 And Galaxy Edge at IFA 2014
Samsung Acquires Canadian Cloud Solution Provider
Samsung Introduces First Curved Soundbar For TVs

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .