Tuesday, July 29, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Microsoft Releases The Sharks Cove, A Raspberry Pi Alternative
EA Access for Xbox One Now Available
NVIDIA Rolls Out the GeForce 340.52 WHQL Driver
BlackBerry Strengthens Its Mobile Security Portfolio With The Acquisition of Secusmart
IBM, ACS And AT&T Claim Breakthrough In Elastic Cloud-to Cloud Networking
HP Says Internet of Things Devices Are Vulnerable to Attack
China Starts Anti-monopoly Investigation On Microsoft
Apple's MacBook Pros Now Come With Faster processors And More Memory
Active Discussions
help questions structure DVDR
Made video, won't play back easily
Questions durability monitor LCD
Questions fungus CD/DVD Media, Some expert engineer in optical media can help me?
CD, DVD and Blu-ray burning for Android in development
IBM supercharges Power servers with graphics chips
Werner Vogels: four cloud computing trends for 2014
Video editing software.
 Home > News > General Computing > Panason...
Last 7 Days News : SU MO TU WE TH FR SA All News

Thursday, April 10, 2014
Panasonic Solar Cell Achieves World's Highest Energy Conversion Efficiency


Panasonic claims it has achieved a conversion efficiency of 25.6% (cell area: 143.7 cm²) in its HIT solar cells, a major increase over the previous world record for crystalline silicon-based solar cells.

The previous record for the conversion efficiency of crystalline silicon-based solar cells of a practical size (100 cm² and over) was 24.7%, as announced by Panasonic in February 2013 (cell area: 101.8 cm²). The new record is 0.9 points higher and the first to break through the 25% barrier for practical size cells. It is also an improvement of 0.6 points over the previous record for small area crystalline silicon-based solar cells (cell area: 4 cm²) of 25.0%.

The achievement of this new record was made possible by further development of Panasonic's proprietary heterojunction technology to realize the high conversion efficiency and high temperature properties of the company's HIT solar cells as well as adopting a back-contact solar cell structure, with the electrodes on the back of the solar cell, which allows the more efficient utilization of sunlight.

A key feature of HIT technology is its ability to reduce the recombination loss of charge carriers, particles of electricity generated by light, through laminating layers of high-quality amorphous silicon on the surface of the monocrystalline silicon substrate, where power is generated. By utilizing the technology to form a high-quality amorphous silicon film on the monocrystalline substrate while minimizing damage to the surface of the substrate, it has been possible to realize a high temperature coefficient of -0.25% per degree Celsius which is able to maintain a high conversion efficiency even with high open circuit voltage (Voc) and at high temperatures.

In order to increase the current in a solar cell, it is necessary to lead the sunlight which arrive at the cell's surface to the monocrystalline silicon substrate, which is the layer which generates the power with less loss. Placing the electrodes on the reverse as back contacts allows the light to reach the substrate more efficiently. This has led to a marked improvement in short circuit current density (Jsc) to 41.8mA/cm² over Panasonic's previous figure of 39.5mA/cm² (in the case of a cell with a conversion efficiency of 24.7%).

In solar cells, the generated electrical current is accumulated in the surface grid electrodes and output externally. Previously, the grid electrodes on the light-receiving side were optimized by balancing the thickness of the grid electrodes (thinning the grid electrodes to reduce the amount of light blocked) and the reduction of electrical resistance loss, but by placing the electrodes on the reverse side, it has become possible to reduce the resistive loss when the current is fed to the grid electrodes. In addition, a high fill factor (FF) of 0.827, has been achieved, even at a practical cell size by improving resistance loss in the amorphous silicon layer.

Cell properties

  • Open-circuit voltage (Voc): 0.740 V
  • Short circuit current (Isc): 6.01 A
  • Short circuit current density (Jsc): 41.8 mA/cm²
  • Fill factor (FF): 0.827
  • Cell conversion efficiency: 25.6%
  • Cell area: 143.7 cm²



Previous
Next
Google Invests In Robot Company Savioke        All News        Facebook To Require Separate Mobile App for Messages
Google Invests In Robot Company Savioke     General Computing News      Facebook To Require Separate Mobile App for Messages

Get RSS feed Easy Print E-Mail this Message

Related News
Panasonic Seeks To Sell Its Mobile Base Station Business to Nokia
Panasonic Updates Toughpad FZ-G1 10-inch Tablet
Intel To Manufacture Future Panasonic SoCs Using Intel's 14nm Low-Power Process
Panasonic Releases Its 2014 Life+Screen AX800 Series 4K Ultra HDTVs
Fujitsu Buys Shares of Panasonic Information Technology Solutions
Panasonic, Samsung Debut Devices For Connected Classrooms
Panasonic Toughpad Line Gets Smaller And Tougher with Rugged Handheld Tablets
Panasonic Weakens Its Research Team
New Panasonic Lumix DMC-FZ1000 Comes With Fast lens And 4K Recording Capability
Toyota, Panasonic Cloud Service Links Cars to Home Appliances
Panasonic to Recall PC Batteries
New Panasonic MEGTRON 7 Circuit Board Material Has The Lowest Transmission Loss

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .