Tuesday, October 17, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
New Fall Update for Xbox One starting to roll out today
Windows OS is Protected Against KRACK Wi-Fi Attacks
First iPhone X Devices Have Left Foxconn's Factory
Noctua Introduces Chromax Line Fans, Cables and Heatsink Covers
HUAWEI Mate 10 and HUAWEI Mate 10 Pro Feature LTE Cat 18 , First Kirin AI Processor
Adobe Patches Patches Critical Security Hole in Flash software
Samsung Introduces Cellular IoT Mobile Device to Track Your Pets, Children, or Personal Items
SoftBank Agrees on T-Mobile - Sprint Merger: report
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, March 11, 2014
Samsung Now Mass Producing 4Gb DDR3 Using 20 Nanometer Process Technology


Samsung Electronics has started mass production of 4-gigabit (Gb) DDR3 memory using a new 20 nanometer process technology, which saves up to 25 percent of the energy consumed by equivalent modules fabricated using the previous 25 nanometer technology.

Samsung has pushed the envelope of DRAM scaling, while utilizing currently available immersion ArF lithography, in its roll-out of the industry's most advanced 20-nanometer (nm) 4-gigabit (Gb) DDR3 DRAM.

With DRAM memory, where each cell consists of a capacitor and a transistor linked to one another, scaling is more difficult than with NAND Flash memory in which a cell only needs a transistor. To continue scaling for more advanced DRAM, Samsung refined its design and manufacturing technologies and came up with a modified double patterning and atomic layer deposition.



Samsung says its modified double patterning technology is enabling 20nm DDR3 production using current immersion ArF lithography equipment and establishes the core technology for the next generation of 10nm-class DRAM production. Samsung also created ultrathin dielectric layers of cell capacitors with "an unprecedented" uniformity, which has resulted in higher cell performance.

With the new 20nm DDR3 DRAM applying these technologies, Samsung also has improved manufacturing productivity, which is over 30 percent higher than that of the preceding 25 nanometer DDR3, and more than twice that of 30nm-class DDR3.

In addition, the new 20nm 4Gb DDR3- based modules can save up to 25 percent of the energy consumed by equivalent modules fabricated using the previous 25 nanometer process technology.




Previous
Next
Titanfall Now Available on Xbox One        All News        Samsung, Vizio Control U.S. Smart TV Market
Intel Accelerates Data Centers With New MXC Optical Cable Technology     PC Parts News      ZOTAC Announces New ZBOX E-Series and ZBOX nano Mini PCs at CeBIT 2014

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Introduces Cellular IoT Mobile Device to Track Your Pets, Children, or Personal Items
Samsung CEO Kwon to Resign as Profits Surge
Samsung Gear Sport and Gear IconX 2018 are Launching in the U.S.
Samsung Takes on Sony With New ICOCELL Image Sensors for Smartphones
Apple iPhone 7 Remained Top Smartphone Model in First Half of 2017
Samsung SDI Showcases New '21700' Cylindrical Battery With 50 percent Bigger Capacity
Samsung Foundry Tapes Out eMRAM Test Chip Based on 28nm FD-SOI Process
Samsung Galaxy Note8 Available in Stores Today
Both LG and Samsung Invest EUR25 million in OLED Material Developer Cynora
Samsung to Create US$300 Million Fund for Auto-related Technologies
Samsung SDI Introduces Battery Technology Advancements for Electric Vehicles
Samsung Mobile Chief Confirms Foldable Phone Project

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .