Saturday, April 21, 2018
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Apple to Replace Some MacBook Pro Laptop Batteries
ZTE's Nubia Red Gaming Phone Released
LG Display's OLED Smartphone Screens Still Not Ready For Apple
Nintendo Labo Kits Now Available
June's VLSI Symposium Focuses on Next Generation Transistor Technology and MRAM
Samsung Not Interested in Nokia's Health Unit
ZTE Says Company's Survival at Risk
2nd Generation AMD Ryzen Desktop Processors Arrive to Offer Great Value
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, March 11, 2014
Samsung Now Mass Producing 4Gb DDR3 Using 20 Nanometer Process Technology


Samsung Electronics has started mass production of 4-gigabit (Gb) DDR3 memory using a new 20 nanometer process technology, which saves up to 25 percent of the energy consumed by equivalent modules fabricated using the previous 25 nanometer technology.

Samsung has pushed the envelope of DRAM scaling, while utilizing currently available immersion ArF lithography, in its roll-out of the industry's most advanced 20-nanometer (nm) 4-gigabit (Gb) DDR3 DRAM.

With DRAM memory, where each cell consists of a capacitor and a transistor linked to one another, scaling is more difficult than with NAND Flash memory in which a cell only needs a transistor. To continue scaling for more advanced DRAM, Samsung refined its design and manufacturing technologies and came up with a modified double patterning and atomic layer deposition.



Samsung says its modified double patterning technology is enabling 20nm DDR3 production using current immersion ArF lithography equipment and establishes the core technology for the next generation of 10nm-class DRAM production. Samsung also created ultrathin dielectric layers of cell capacitors with "an unprecedented" uniformity, which has resulted in higher cell performance.

With the new 20nm DDR3 DRAM applying these technologies, Samsung also has improved manufacturing productivity, which is over 30 percent higher than that of the preceding 25 nanometer DDR3, and more than twice that of 30nm-class DDR3.

In addition, the new 20nm 4Gb DDR3- based modules can save up to 25 percent of the energy consumed by equivalent modules fabricated using the previous 25 nanometer process technology.




Previous
Next
Titanfall Now Available on Xbox One        All News        Samsung, Vizio Control U.S. Smart TV Market
Intel Accelerates Data Centers With New MXC Optical Cable Technology     PC Parts News      ZOTAC Announces New ZBOX E-Series and ZBOX nano Mini PCs at CeBIT 2014

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Not Interested in Nokia's Health Unit
Samsung to Release Its First MicroLED TVs in 2018
Samsung Galaxy J2 Pro Smartphone Has no Data Connectivity
Samsung 360 Round 3D Video Camera and Samsung DeX Pad Now Available
Samsung Reports Profit on High Memory Sales
Samsung Launches the Notebook Odyssey Z for Gaming
Samsung Notebook 5 and Notebook 3 Target General Users
Samsung Breaks Ground in New Memory fab Line in Xian
Samsung Electronics Shareholders Approve Stock Split, Company Talks About Future for Smartphones, Chips
New Samsung Exynos 7 Series 9610 Mobile Processor focuses on Multimedia
Samsung Expands its 8-Inch Foundry Offerings with New RF/IoT and Fingerprint Technology Solutions
Samsung's Ruggedized Galaxy Tab Active2 Now Available in the U.S.

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2018 - All rights reserved -
Privacy policy - Contact Us .