Wednesday, August 24, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
AMD Increased GPU Market Share in Q2 2016
Chinese Firm Unveils 64-core CPU
PlayStation Now Coming to PC, DualShock 4 USB Wireless Adaptor Unveiled
Upgraded Tesla Car Gets From 0 to 60 in 2.5 Seconds
Opera VPN App For Android Released
Microsoft Provides Glimpse Of 24-core Processor For HoloLens
Nvidia Unveils Parker, The Latest SOC For Autonomous Vehicles
Toshiba to Implement Eyefi Connected Features in Next FlashAir SD Cards
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, March 11, 2014
Samsung Now Mass Producing 4Gb DDR3 Using 20 Nanometer Process Technology


Samsung Electronics has started mass production of 4-gigabit (Gb) DDR3 memory using a new 20 nanometer process technology, which saves up to 25 percent of the energy consumed by equivalent modules fabricated using the previous 25 nanometer technology.

Samsung has pushed the envelope of DRAM scaling, while utilizing currently available immersion ArF lithography, in its roll-out of the industry's most advanced 20-nanometer (nm) 4-gigabit (Gb) DDR3 DRAM.

With DRAM memory, where each cell consists of a capacitor and a transistor linked to one another, scaling is more difficult than with NAND Flash memory in which a cell only needs a transistor. To continue scaling for more advanced DRAM, Samsung refined its design and manufacturing technologies and came up with a modified double patterning and atomic layer deposition.



Samsung says its modified double patterning technology is enabling 20nm DDR3 production using current immersion ArF lithography equipment and establishes the core technology for the next generation of 10nm-class DRAM production. Samsung also created ultrathin dielectric layers of cell capacitors with "an unprecedented" uniformity, which has resulted in higher cell performance.

With the new 20nm DDR3 DRAM applying these technologies, Samsung also has improved manufacturing productivity, which is over 30 percent higher than that of the preceding 25 nanometer DDR3, and more than twice that of 30nm-class DDR3.

In addition, the new 20nm 4Gb DDR3- based modules can save up to 25 percent of the energy consumed by equivalent modules fabricated using the previous 25 nanometer process technology.




Previous
Next
Titanfall Now Available on Xbox One        All News        Samsung, Vizio Control U.S. Smart TV Market
Intel Accelerates Data Centers With New MXC Optical Cable Technology     PC Parts News      ZOTAC Announces New ZBOX E-Series and ZBOX nano Mini PCs at CeBIT 2014

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung To Announce Refurbished Smartphone Program
Samsung Gear S3 Smartwatch Is Coming This Month
Samsung's 32TB SSD Includes Cutting-edge 3D Chip Technology
Researcher Hacked Samsung Pay Standing Just 2m Away from The Paying Process
Samsung, TSMC And Intel Set To Expand Their Chip Production Capacities In 2H
Samsung Holds Largest Share In Enterprise SSD Market
Samsung Reportedly in Talks to Buy Assets of Fiat Auto-Parts Unit
Samsung Gear S3, Apple Watch 2 Coming In September
Samsung Unveils the New Galaxy Note7
Samsung and Nestle Collaborate on the Internet of Things and Nutrition
Samsung Second Quarter Results Boosted By Component Sales
Samsung To Release HDR+ Firmware Update for 2016 SUHD TVs

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .