Saturday, August 30, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Samsung Partners with Nike On Running App
Samsung Applied for Samsung Quantum Dot TV Trademark
New iPhones Expected at Sept. 9 Event
Google Tests Drones For Delivery Of Goods
UMC To Partner With Fujitsu On Chip Production
Samsung, LG Introduce New Smartwatches
Sharp, Pioneer Dissolve Their Capital Alliance
Nero 2015 is Coming At IFA
Active Discussions
help questions structure DVDR
Made video, won't play back easily
Questions durability monitor LCD
Questions fungus CD/DVD Media, Some expert engineer in optical media can help me?
CD, DVD and Blu-ray burning for Android in development
IBM supercharges Power servers with graphics chips
Werner Vogels: four cloud computing trends for 2014
Video editing software.
 Home > News > PC Parts > NAND Fl...
Last 7 Days News : SU MO TU WE TH FR SA All News

Friday, November 29, 2013
NAND Flash Is Shrinked And Gradually Replaces DRAM


As we are moving into the post-PC era with the expansion of tablets and smartphones, NAND flash memory technology is also advancing and founds its way to systems currently using DRAM memory.

According to a TechInsights report, NAND flash revenue is expected to reach $30 billion this year, surpassing DRAM revenue for the first time. The report also predicts a drop in NAND's average selling price, which will help increase market penetration.

NAND flash makers are controlling the cost of materials and manufacturing by lowering the process nodes. By doing that, storage density is increased and more memory is delivered in the same-sized package, while cutting off the manufacturing costs.

Toshiba's 19nm NAND flash is currently into volume production. The chips feature a two-bit-per-cell architecture for a total of 64 Gb of capacity in a 94 mm2 device and can deliver write speeds as high as 25MB/s. Toshiba has also announced a family of embedded NAND flash memory modules aimed at smartphones, video cameras, and tablets. Densities range from 4GB to 128GB. The company also has three-bit-per-cell chips under development.

Samsung is working with a "10nm-class" triple-level-cell NAND flash chip, which is actually a chip fabricated using the 16-nm process, according to TechInsights. Samsung is shipping 128-Gb chips for use in solid-state drives aimed at the enterprise storage market. By leveraging its 20-nm production lines for the new chips, the company expects to boost manufacturing yields by roughly 30%. Based on the toggle DDR 2.0 interface, the devices support 400MB/s data transfer rates.

Micron has began sampling its 16nm NAND flash chip based on planar-cell technology. The company is targeting volume production of the 128Gb MLC devices for the fourth quarter, with SSD availability in 2014. Micron is also working on its hybrid memory cube (HMC) and has started shipping 2GB HMC engineering samples last September. The company expects to start volume production of 2GB and 4GB HMC later in 2014.

SK Hynix has released a 16-nm, 64Gb multi-level cell (MLC) NAND flash chip. The S. Korean company uses an insulating air gap, rather than a material thin film. This helps prevent cell-to-cell interference.

SK Hynix has also developed 128Gb (16-gigabytes, 16GB) MLC chips based on the specification and endurance of 16nm 64Gb MLC, with mass production scheduled for early 2014.

SK hynix also plans to accelerating the development of TLC (Triple Level Cell) and 3D NAND Flash.




Previous
Next
Samsung Smartphones Will Not Get Optical Image Stabilization Function Soon        All News        Samsung Black Friday Specials
TDK Acquires HDD-related Products Businesses     PC Parts News      Hitachi Combines SSD Tier And SSD Cache Methods in Tiered Storage Systems

Get RSS feed Easy Print E-Mail this Message

Related News
NAND Flash Market to Grow in 2015
Toshiba, Samsung Vie For 48-layer 3-D NAND Chips
Samsung Maintains Its Global NAND Flash Leadership
NAND Flash Supplier Revenue Falls in First Quarter: TrendForce
Samsung Starts Mass Producing 32-Layer 3D V-NAND Flash Memory, Its 2nd Generation V-NAND Offering
Toshiba, SanDisk To Challenge Samsung With Mass Production Of '3D' Memory
Samsung Has Started 3D V-NAND Production In Chinese Facility
Samsung Announces High-endurance 128Gb V-NAND Flash Memory For Enerprise SSDs
NAND flash Prices Fell in January
3D-NAND Flash Development To Accelerate Next Year
NAND Flash Industry Structure to Transform as OCZ Declares Bankruptcy
Toshiba's SLC NAND Has Error Correction Inside

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .