Wednesday, April 26, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Verizon's Latest Unlimited Data Plan Costs $80
LG Display Posts Record Earnings on OLED TV Sales
Google co-founder Sergey Brin Is Building Airship
Uber Faces New Setback In South Korea
Uber Takes to The Skies With Flying Taxis by 2020
ARM Introduces Image Signal Processor Targeted At ADAS
Huawei Regains Smartphone Lead in China: Canalys
Xiaomi Launches Intelligent Sneakers Powered By Intel Curie Chip
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > Mobiles > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Friday, February 08, 2013
Toshiba Is Sampling First UFS-compliant Embedded NAND Flash Memory Modules


Toshiba has started sample shipments of a 64GB embedded NAND flash memory module, the first equipped with a UFS I/F.

The module is fully compliant with the JEDEC UFS Ver.1.1 standard and is designed for digital consumer products including smartphones and tablet PCs.

The 64GB NAND flash memory chip boasts with ultra-speedy 3.0Gb/s interface. The module is sealed in a small FBGA package, 12x16x1.2mm, and have a signal layout compliant with JEDEC UFS Ver.1.1.

Universal Flash Storage is a product category for a class of embedded memory products built to the JEDEC UFS standard specification. The JEDEC UFS Ver.1.1 compliant interface handles essential functions, including writing block management, error correction and driver software.

Toshiba is offering the samples to OC vendors in order to evaluate the UFS I/F and its protocol in host chipsets. UFS I/F has a serial I/F, offreing scalability in the number of lanes and speed.

Toshiba has not yet decided when it will start mass production of the new 64GB UFS module.

Specifications

Interface: JEDEC UFS Version 1.1 standard

Power Supply Voltage:
2.7V to 3.6V (Memory core)
1.70V to 1.95V (Controller core)
1.10V to 1.30V (UFS I/F signals)

Number of lanes: Downstream 1 lane / Upstream 1 lane
I/F Speed: 2.9Gbps/lane
Temperature range: -25 degrees to +85 degrees Celsius
Package: 169Ball 12x16x1.2mm FBGA


Previous
Next
Twitter Now Showing Older Tweets In Search Results        All News        Seagate Set To Release Four-platter 4TB HDD
Spotify Comes To Windows Phone 8     Mobiles News      Blackberry 10 Won't Reach Japan

Get RSS feed Easy Print E-Mail this Message

Related News
3D-NAND to Become Mainstream This Year
Toshiba to Spin Off 4 Operations
Questions Remain About The Fate Of Toshiba's HDD and SSD Business
Toshiba's Shareholders Seek For New Compensatory Damages
Toshiba's New 8TB Consumer Hard Disk Focuses on Reliability
INCJ Added to the List Of Companies Interested In Toshiba's Chip Unit
Apple Eyes Toshiba's Memory Chip Business: reports
SK Hynix Introduces First 72-Layer 3D NAND Flash
Toshiba To Sell Its TV Business, Turkish, Chinese Companies Among Buyers
Toshiba Faces USITC Probe Over Patent Violation Claim
Foxconn, Broadcom And SK Hynix Closer To Toshiba's Memory Buiness
Toshiba Announces 8TB HDD Model Enterprise HDD

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .