Thursday, March 23, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Major Advertisers Boycott Youtube Advertising, At Least For Now
Samsung and eSilicon Taped Out First 14nm Network Processor
Now You Can Go Live On Facebook From Your Computer
Qualcomm Snapdragon 835 Benchmarks
Google Maps Lets Others Track You
Google Plans Faster Updates To Keep Android Phones Safe
Apple's iPhone 6s Topped List of Best-Selling Smartphones for 2016
Google Says Hacked sites Rose in 2016
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > Mobiles > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Friday, February 08, 2013
Toshiba Is Sampling First UFS-compliant Embedded NAND Flash Memory Modules


Toshiba has started sample shipments of a 64GB embedded NAND flash memory module, the first equipped with a UFS I/F.

The module is fully compliant with the JEDEC UFS Ver.1.1 standard and is designed for digital consumer products including smartphones and tablet PCs.

The 64GB NAND flash memory chip boasts with ultra-speedy 3.0Gb/s interface. The module is sealed in a small FBGA package, 12x16x1.2mm, and have a signal layout compliant with JEDEC UFS Ver.1.1.

Universal Flash Storage is a product category for a class of embedded memory products built to the JEDEC UFS standard specification. The JEDEC UFS Ver.1.1 compliant interface handles essential functions, including writing block management, error correction and driver software.

Toshiba is offering the samples to OC vendors in order to evaluate the UFS I/F and its protocol in host chipsets. UFS I/F has a serial I/F, offreing scalability in the number of lanes and speed.

Toshiba has not yet decided when it will start mass production of the new 64GB UFS module.

Specifications

Interface: JEDEC UFS Version 1.1 standard

Power Supply Voltage:
2.7V to 3.6V (Memory core)
1.70V to 1.95V (Controller core)
1.10V to 1.30V (UFS I/F signals)

Number of lanes: Downstream 1 lane / Upstream 1 lane
I/F Speed: 2.9Gbps/lane
Temperature range: -25 degrees to +85 degrees Celsius
Package: 169Ball 12x16x1.2mm FBGA


Previous
Next
Twitter Now Showing Older Tweets In Search Results        All News        Seagate Set To Release Four-platter 4TB HDD
Spotify Comes To Windows Phone 8     Mobiles News      Blackberry 10 Won't Reach Japan

Get RSS feed Easy Print E-Mail this Message

Related News
Toshiba Delays Earnings Report, Announces Recovery Plan
Toshiba Informs SK hynix of New Plan to Sell Memory Business
Foxconn Is Bidding for Toshiba Chip Business
Western Digital Releases New iNAND 7350 Storage Solution Built on 3D NAND
Toshiba Starts Sampling 64-Layer, 512-gigabit 3D Flash Memory
Toshiba Books $6.3 Billion Writedown, Chairman Resigns
Toshiba Starts Construction of Fab 6 at Yokkaichi, Japan
Toshiba Announces First MN Series HDDs
SK hynix Bids for Stake in Toshiba's Memory Chip Business
Western Digital Introduces First 512 Gigabit 64-Layer 3D NAND Chip
Micron's 2017 Roadmap Includes 64-layer 3D NAND And GDDR6
Toshiba Faces New Lawsuits Over 2015 Accounting Scandal

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .