Thursday, December 18, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
ICANN Targeted in Phishing Attack
BlackBerry Classic Makes Official Debut
LG, Samsung, To Dominate The TV Market in 2015
Renesas Develops 16nm FinFET SRAM
Sony Film Debut Canceled After Threats
New Nintendo Devices To Use 'free-form' LCDs
Sony Single-Lens OLED Display Module Turns Any Eyewear Into Smartglasses
Dutch Privacy Watchdog Probes Facebook
Active Discussions
Will there be any trade in scheme for the coming PSP Go?
Hello, Glad to be Aboard!!!
Best optical drive for ripping CD's? My LG 4163B is mediocre.
Hi All!
cdrw trouble
CDR for car Sat Nav
DVD/DL for Optiarc 7191S at 8X
Copied dvd's say blank in computer only
 Home > News > Mobiles > Rambus ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Monday, January 28, 2013
Rambus Introduces R+ LPDDR3 Memory Solution


Rambus today announced its first LPDDR3 offering targeted at the mobile industry.

The R+ LPDDR3 memory architecture is fully compatible with industry standards while providing improved power and performance. The architecture includes both a controller and a DRAM interface. According to Rambus, it can reduce active memory system power by up to 25% and supports data rates of up to 3200 megabits per second (Mbps), which is double the performance of existing LPDDR3 technologies.

"Each generation of mobile devices demands even higher performance with lower power. The R+ LPDDR3 technology enables the mobile market to use our controller and DRAM solutions to provide unprecedented levels of performance, with a significant power savings," said Kevin Donnelly, senior vice president and general manager of the Memory and Interface Division at Rambus. "Since this technology is a part of our R+ platform, beyond the improvements in power and performance, we're also maintaining compatibility with today's standards to ensure our customers have all the benefits of the Rambus' superior technology with reduced adoption risk."

The seed to the improved power and performance offered by the R+ LPDDR3 architecture is a low-swing implementation of the Rambus Near Ground Signaling technology. Essentially, this single-ended, ground-terminated signaling technology allows devices to achieve higher data rates with significantly reduced IO power.

Additional key features of the R+ LPDDR3 include:

- 1600 to 3200Mbps data rates
- Multi-modal support for LPDDR2, LPDDR3 and R+ LPDDR3
- DFI 3.1 and JEDEC LPDDR3 standards compliant
- Supports package-on-package and discrete packaging types
- Includes LabStation software environment for bring-up, characterization, and validation in end-user application
- Silicon proven design in GLOBALFOUNDRIES 28nm-SLP process

The R+ LPDDR3 memory controller and DRAM interface solutions are currently available.


Previous
Next
Toshiba Introduces Canvio Special Edition Portable Hard Drive        All News        Pantech Introduces 5.9-inch Full-HD Smartphone
New BlackBerry World to Include Songs, Latest Movies and TV Shows     Mobiles News      Pantech Introduces 5.9-inch Full-HD Smartphone

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Now Mass Producing 20-Nanometer 6Gb LPDDR3 Mobile DRAM
Rambus Signs License Agreement with Qualcomm
Rambus and Nanya Sign Patent License Agreement
Rambus CMOS Sensor Fits In Cameras Without Lens
Rambus Signs Agreement with Samsung
Rambus Settles Patent Disputes With Micron
Samsung Starts Production Of 3GB LPDDR3 Mobile Memory
Rambus Signs Agreement with STMicroelectronics
Rambus and SK Hynix Sign Patent License Agreement
SK Hynix Develops First High Density 8Gb LPDDR3
Rambus Pleased With Court Ruling In SK Hynix Case
Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .