Micron has announced high-volume availability of
30-nanometer (nm) reduced-power DDR3L-RS SDRAM for
ultrathin computing devices and tablets.
The 2-gigabit (Gb) and 4Gb solutions reduce power
consumption in standby to provide longer battery life,
while maintaining the high performance and cost
effectiveness of PC DRAM.
Previously announced as "DDR3Lm," these devices improve
overall system power consumption by reducing self refresh
power (IDD6), enabling Micron to provide chipset vendors,
enablers and electronics manufacturers with reduced-power
memory that offers the same performance, quality and
reliability as standard DRAM.
"Micron was the first DRAM supplier validated on the Ivy
Bridge platform with DDR3L-RS, setting the industry
standard for reduced standby PC DRAM," said Geof Findley,
Memory Enabling Senior Manager at Intel.
In addition to the 2Gb and 4Gb devices, Micron has begun
sampling 8Gb x 32 DDR3L-RS and is delivering samples of 8Gb
x 16 DDR3L-RS; production is slated for December 2012.
Additional power and footprint savings are expected with
the launch of DDR4-RS in early 2013.
Last week, SK Hynix also announced plans to release
(Reduced Standby) DRAM for mobile solutions using its 20nm
Seperately, Micron Technology has named Michael Rayfield,
vice president, Wireless Solutions Group.
Rayfield will be responsible for managing all aspects of
Micron's Wireless Solutions Group that provides DRAM, NAND
Flash, NOR Flash and PCM memory solutions, including
multi-chip packages, to the global mobile device market.
Rayfield worked for the past seven years as the vice
president and general manager of NVIDIA's Mobile
Business Unit where his team created advanced computer on a
chip technology and won key mobile industry reference