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Wednesday, September 19, 2012
Micron Releases 30nm DDR3L-RS Products

Micron has announced high-volume availability of 30-nanometer (nm) reduced-power DDR3L-RS SDRAM for ultrathin computing devices and tablets.

The 2-gigabit (Gb) and 4Gb solutions reduce power consumption in standby to provide longer battery life, while maintaining the high performance and cost effectiveness of PC DRAM.

Previously announced as "DDR3Lm," these devices improve overall system power consumption by reducing self refresh power (IDD6), enabling Micron to provide chipset vendors, enablers and electronics manufacturers with reduced-power memory that offers the same performance, quality and reliability as standard DRAM.

"Micron was the first DRAM supplier validated on the Ivy Bridge platform with DDR3L-RS, setting the industry standard for reduced standby PC DRAM," said Geof Findley, Memory Enabling Senior Manager at Intel.

In addition to the 2Gb and 4Gb devices, Micron has begun sampling 8Gb x 32 DDR3L-RS and is delivering samples of 8Gb x 16 DDR3L-RS; production is slated for December 2012. Additional power and footprint savings are expected with the launch of DDR4-RS in early 2013.

Last week, SK Hynix also announced plans to release its DDR3L-RS (Reduced Standby) DRAM for mobile solutions using its 20nm class technology.

Seperately, Micron Technology has named Michael Rayfield, vice president, Wireless Solutions Group.

Rayfield will be responsible for managing all aspects of Micron's Wireless Solutions Group that provides DRAM, NAND Flash, NOR Flash and PCM memory solutions, including multi-chip packages, to the global mobile device market.

Rayfield worked for the past seven years as the vice president and general manager of NVIDIA's Mobile Business Unit where his team created advanced computer on a chip technology and won key mobile industry reference designs.

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