Samsung has begun mass producing the first two gigabyte (GB), low power double-data-rate 3 (LPDDR3) memory, using 30 nanometer (nm) class technology, for next-generation mobile devices.
Samsung started mass production of the
advanced mobile DRAM (dynamic random access memory) chip ten months after it began producing the
first 30nm-class based 2GB LPDDR2 memory in October, 2011.
The new LPDDR3, which marks the first time a 2GB LPDDR3
density is available in one space-saving package, utilizes
four LPDDR3 chips stacked together. LPDDR3 is needed for
fast processors, high resolution displays and 3D graphics
in tablets and smartphones.
"We will embrace greater technical cooperation with
industry leading mobile device makers, as we continue to
provide timely next-generation memory solutions like 2GB
LPDDR3 DRAM, in helping to accelerate growth of the mobile
memory market," said Wanhoon Hong, executive vice
president, Memory Sales & Marketing, Samsung Electronics.
"Furthermore, with this rapid introduction of 2GB LPDDR3,
we are moving very assertively to expand our global
leadership on the premium side of our extensive memory
The new 2GB LPDDR3 DRAM can transfer data at up to 1600
megabits per second (Mbps) per pin, which is approximately
50 percent faster than a LPDDR2 DRAM. And on the package
level, it provides a data transmission rate up to 12.8
gigabytes per second (GB/s), which will enable playing of
full HD video content in real-time on smartphones and
tablets. The high data transfer rates allows LPDDR3 to
exceed support for full HD video payback on screens
exceeding the current market available four-inch
measurement and enable real-time viewing without
downloading the content.