LSI is showcasing its SandForce SF-2000 Flash Storage Processors using Toshiba 19nm and Intel 20nm NAND flash memory, the most advanced flash memory technology currently available for solid state drive (SSD) applications, at Computex 2012.

As flash memory geometries continue to shrink, the need to incorporate better error correction becomes more critical. This is due to increasing difficulty for individual cells to hold a specific charge, often resulting in reduced reliability, data integrity and data retention characteristics in flash devices. To optimize the reliability and endurance of 19nm and 20nm flash storage, LSI's SandForce SF-2000 FSPs offer support of up to 55-bit errors per 512 byte sector, ideal for a processor designed to support both enterprise and client markets. LSI SandForce products include an error-correction engine designed to address the ever-changing and increasing flash error-correction requirements of current and future NAND flash technologies.

To meet reliability and endurance requirements for flash devices using smaller silicon geometries, LSI SandForce FSPs feature DuraClass advanced NAND flash management technology.

DuraClass management features include:

- DuraWrite: optimizes the number of flash program cycles to effectively extend flash-rated endurance.

- RAISE (Redundant Array of Independent Silicon Elements): delivers improvement in drive reliability, resulting in RAID-like protection and recovery from a single-drive solution.

- Advanced Wear Leveling and Monitoring: optimized wear-leveling algorithms, further extending flash endurance.

- Recycler: intelligently performs "garbage collection" to erase invalid data while minimizing the impact on flash endurance.