Thursday, December 18, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Facebook And Android Top Digital Trends For 2014
Your Next Car Could Have Android Inside
North Korea Linked To Recent Sony Hacking
Sony Global Education Established
CEA and Japan Audio Society to Jointly Promote Hi-Res Audio
Intel, IBM Follow Different Strategies On 14nm FinFET
Toshiba Announces 6TB Enterprise Capacity HDD Models
WebOS 2.0 Smart TV Platfom To Debut At CES
Active Discussions
The Leading Fifa 15 Coins saler
Windows xp
Will there be any trade in scheme for the coming PSP Go?
Hello, Glad to be Aboard!!!
Best optical drive for ripping CD's? My LG 4163B is mediocre.
Hi All!
cdrw trouble
CDR for car Sat Nav
 Home > News > General Computing > Spansio...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, May 23, 2012
Spansion Unveils SLC NAND Flash Family and Future Roadmap


Spansion today announced it has started sampling its first family of single-level cell (SLC) Spansion NAND products using 4x nm floating-gate technology, targeted specifically for the embedded market.

Spansion SLC NAND will be offered in densities from 1 Gb to 8 Gb in 3.0V and 1.8V families that feature high performance, extended temperature range, long-term product support and reliability demands, such as 1-bit error correction code (ECC). Additionally, Spansion also unveiled its SLC NAND product roadmap through 2017.

Spansion SLC NAND products complement the company's broad parallel and serial NOR Flash memory portfolio. When designs require high-performance code execution and data storage, designers can select Spansion parallel or serial NOR Flash memory. Data storage needs can be addressed with new Spansion SLC NAND Flash solutions.

Spansion's five-year technology roadmap includes 1 Gb ? 8 Gb SLC NAND solutions on 4x nm technology today, 3x nm technology by end of 2012 and 2x nm in 2014.

Key Facts of the Spansion SLC NAND family:

- 3.0 Volt 1 Gb, 2 Gb and 4 Gb monolithic solutions are sampling now
- 1.8 Volt 1 Gb, 2 Gb and 4 Gb monolithic solutions will begin sampling at the end of 2012
- 8 Gb solutions will sample in the second half of 2012
- 4x nm floating-gate process technology
- Industrial temperature range (-40C to +85C)
- 100,000 cycle endurance with recommended 1-bit ECC
- SLC NAND performance with 25µs random access, 25 ns sequential access, and up to 200 µs programming
- Industry-standard 48-pin TSOP package via Spansion's Universal Footprint
- Industry-standard NAND signal interface and command set
- Complimentary Spansion FFS -- customized software drivers and Flash file system software


Previous
Next
Sony Ends Panel Joint Venture With Sharp        All News        Google Didn't Infringe on Oracle Java Patents
Sony Ends Panel Joint Venture With Sharp     General Computing News      Google Didn't Infringe on Oracle Java Patents

Get RSS feed Easy Print E-Mail this Message

Related News
NAND Flash Industry To Grow More in 2015
Cypress and Spansion to Merge in $4 Billion Transaction
Intel-Micron 3D NAND To Have 32 Layers, 256Gb Per Die
Samsung Starts Mass Production of First 3-bit 3D V-NAND
NAND Flash Market to Grow in 2015
Toshiba, Samsung Vie For 48-layer 3-D NAND Chips
Samsung Maintains Its Global NAND Flash Leadership
NAND Flash Supplier Revenue Falls in First Quarter: TrendForce
Samsung Starts Mass Producing 32-Layer 3D V-NAND Flash Memory, Its 2nd Generation V-NAND Offering
Toshiba, SanDisk To Challenge Samsung With Mass Production Of '3D' Memory
Samsung Has Started 3D V-NAND Production In Chinese Facility
Samsung Announces High-endurance 128Gb V-NAND Flash Memory For Enerprise SSDs

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .