Saturday, May 25, 2013
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Xbox One To Support 3D Gaming and 4K Video
Xbox One Available For Pre-order For 599 Euros
Panasonic, Toshiba Showcase High-resolution Flexible OLED Displays
Nokia Files New Complaint Against HTC
Verbatim V3 MAX USB 3.0 Flash Drives Available In Europe
Microsoft Adds Windows Button On new Mice
Google To Bid For Waze: report
Panasonic Develops High Efficiency White OLED for Lighting
Active Discussions
Windows 64
CDR for car Sat Nav
deleted
CD Drive Retrieve
burning
Extremely Slow External CD (Samsung SE-S084C)
Best optical drive for ripping CD's? My LG 4163B is mediocre.
Verbatim DVD+R still tops?
 Home > News > General Computing > Fujitsu...
Last 7 Days News : SU MO TU WE TH FR SA All News

Thursday, December 08, 2011
Fujitsu and SuVolta Demonstrate Ultra-low-voltage Operation of SRAM Down to 0.4V


Fujitsu Semiconductor and SuVolta have demonstrated ultra-low-voltage operation of SRAM (static random access memory) blocks down to 0.425V by integrating SuVolta's PowerShrink low-power CMOS platform into Fujitsu's low-power process technology.

Technology details and results will be presented at the 2011 International Electron Devices Meeting (IEDM) being held in Washington DC, starting December 5th.

The biggest contributor to power consumption is supply voltage. Previously, the power supply voltage of CMOS steadily reduced to approximately 1.0V at the 130nm technology node, but it has not reduced much further as technology has scaled to the 28nm node. To reduce the power supply voltage, one of the biggest obstacles is the minimum operating voltage of embedded SRAM blocks.

By combining SuVolta's Deeply Depleted Channel (DDC) transistor technology - a component of the PowerShrink platform - and Fujitsu Semiconductor's process technology, the two companies have verified that a 576Kb SRAM can work well at approximately 0.4V by reducing CMOS transistor threshold voltage (VT) variation to half. This technology matches well with existing infrastructures including existing system-on-chip (SoC) design layouts, existing design schemes such as body bias control, and existing manufacturing tools.

SuVolta argues that one reason that the scaling of supply voltage stopped at the 130-nm node was because of random dopant fluctuation (RDF) in the implanted dopants in the transistor channel. RDF results in variation in threshold voltage (VT) between different transistors on a chip.

DDC achieves tight control of dopants in layers of epitaxial silicon growth to define a thin channel at the start of the manufacturing process. Thereafter the process is a conventional bulk CMOS process but without the need to inject dopants using ion implantation. According to the Fujitsu paper intra-die VT variation is reduced by half through the use of DDC compared with Fujitsu's non-DDC 65-nm CMOS.

Fujitsu Semiconductor plans to advance the technology and in order to respond to the need for low-power consumption and/or low voltage operation in consumer products, mobile devices and other offerings.


Previous
Next
Twtter Gets New Design, Functions        All News        Xbox LIVE iOS App Released
Twtter Gets New Design, Functions     General Computing News      Yahoo Awarded $610 Million Against Spammers

Get RSS feed Easy Print E-Mail this Message

Related News
Fujitsu Develops 3D Gesture Recognition Technology
Fujitsu To Sell Chip Operations to Spansion
New User Interface Enables Innovative Handling of Data by Directly Touching Objects
Fujitsu Develops High-Speed Processing Technology For Big Data
Fujitsu Technology Takes Your Pulse Using Cameras
Fujitsu Releases New 1 Mbit and 2 Mbit FRAM
New Optical Transmission Technology Achieves 100 Gbps Using 10 Gbps Transmission Components
Fujitsu Releases New ARROWS Water-Resistant Tablet for Enterprises
Fujitsu Launches ARROWS A SoftBank 201F Smartphone
Fujitsu, Panasonic To Merge Their LSI Chip Operations
Fujitsu Introduces ARROWS Tab Android Tablet, New Windows 8 Touchscreen PCs
Fujitsu Develops New Data Transfer Protocol Enabling Improved Transmissions Speeds

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2013 - All rights reserved -
Privacy policy - Contact Us .