Micron Technology and Singapore's A*STAR Data Storage Institute (DSI) will collaborate on the development of spin transfer torque magnetic random access memory (STT-MRAM), a promising alternative non-volatile memory technology for next-generation storage.

Current commercial solid state drives (SSDs) use NAND Flash memory, a type of non-volatile memory, to store data. Demand for these types of drives has been increasing rapidly. SSDs, unlike hard disk drives (HDDs), contain no moving parts and are less susceptible to physical shock and vibration than HDDs. SSDs are also capable of retaining their memory without power and are very durable. However, as the memory industry continues to scale NAND Flash memory, it sees issues such as limited endurance and high write power. Therefore, the industry is currently researching alternative non-volatile memory solutions such as STT-MRAM. STT-MRAM also has potential to address technology scaling roadmap challenges of volatile memory such as Dynamic RAM (DRAM) and hence can enhance the performance for many volatile memory applications as well.

As part of the collaboration, Micron and DSI will invest in joint research to develop high-density STT-MRAM devices during the next three years. Researchers from both Micron and DSI will work together to develop high-density STT-MRAM devices.