Wednesday, October 18, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
ICDM to Establish New Display Evaluation Standards Based on Samsung and LG Proposals
Globalfoundries and Intel to Talk About 10, 7nm at IEDM
Intel and Mobileye Offer Present Algorithms to Prove the Safety of Autonomous Vehicles
Chinese BOE and CSOT to Invest in Japanese JOLED, Adding Pressure to South Korean Rivals
Samsung's 8nm LPP is Ready For Production
Intel Advances Artificial Intelligence With Nervana Neural Network Processor
Razer Launches Quad-core Blade Stealth Laptop and Core V2 External Graphics Enclosure
Google Designed New Pixel Visual Core Chip Internally
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, July 12, 2011
Toshiba and SanDisk New 300mm NAND Flash Memory Fabrication Facility in Japan


Toshiba and SanDisk today celebrated the opening of Fab 5, the third 300mm wafer NAND fabrication facility at Toshiba's Yokkaichi Operations in Mie Prefecture, Japan.

Toshiba began the construction of Fab 5 in July 2010, and the new facility, equipped with manufacturing equipment funded by Toshiba and SanDisk, started volume production in July 2011. Fab 5 currently uses 24 nanometer (nm) process technology and its first wafer outs will be in August. In time, the fab will transition to more advanced process generations, starting with recently announced 19nm technology, the world's smallest process node.

Fab 5 incorporates earthquake-absorbing structures and integrates multiple power compensation techniques for protection against unexpected disruptions. LED lighting and power-saving manufacturing equipment will support the fab in securing Toshiba's goal of 12 percent less CO2 emissions than Fab 4. A wafer transportation system links the facility with Fabs 3 and 4 to support efficient manufacturing.

During a tour of the new chip factory, Toshiba's president Norio Sasaki said his company wanted to soon overtake rival Samsung Electronics as the world's leading maker of flash memory.

Flash Forward, Ltd., a joint venture between Toshiba and SanDisk established in September 2010 (50.1 percent owned by Toshiba and 49.9 percent by SanDisk), funded the advanced manufacturing equipment within the fab.


Previous
Next
Samsung Confirms 20nm Design Infrastructure with Test Chip Tape-out        All News        GLOBALFOUNDRIES Fabs in New York and Dresden Achieve Ready for Equipment Milestone
Samsung Confirms 20nm Design Infrastructure with Test Chip Tape-out     General Computing News      GLOBALFOUNDRIES Fabs in New York and Dresden Achieve Ready for Equipment Milestone

Get RSS feed Easy Print E-Mail this Message

Related News
New Toshiba TR200 3D NAND SSDs Offer an Affordable Alternative to Hard Disks
Toshiba to Further Invest in Production Equipment for Fab 6 at Yokkaichi Operations
QLC NAND Flash to Succeed TLC NAND Next Year
Western Digital Provides Its Aspect on Latest Developments Related to the Sandisk JV with Toshiba
Toshiba Signs Deal to Sell Chip Unit to Bain-led Group
SK Hynix to Invest 395 billion yen in Toshiba chip unit
Western Digital Tries to Block Toshiba's $18 Billion Memory Chip Unit Sale
Toshiba MG06 Series Includes 10TB Enterprise Capacity SATA HDD
Toshiba Formalizes Chips Sale to Bain Consortium, WD Steps up Legal Action
Toshiba Has Chosen Japan-U.S.-South Korea Group For its Chip Unit
Intel Showcases 10 nm Updates, a new aspect for Moore's Law, FPGA Progress and 64-Layer 3D NAND for Data Center
Apple Could be Behind Toshiba's MoU With Bain Capital's Consortium

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .