Monday, March 27, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Apple Wins Design Patent Case In China
Uber Suspends Self-driving Car Program After Arizona Acident
LG's Mobile Payment Service Coming Soon
Samsung Backs Away From Restructuring Plan, Gears Up For Galaxy S8 Release
Microsoft Delivers Telemetry-free Windows 10 To China
Samsung Plans To Release New Curved TVs
ASUS STRIX GD30 Gaming Desktop Released
New Alcatel A30 and Moto G5 Plus Available On Amazon
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, July 12, 2011
Toshiba and SanDisk New 300mm NAND Flash Memory Fabrication Facility in Japan


Toshiba and SanDisk today celebrated the opening of Fab 5, the third 300mm wafer NAND fabrication facility at Toshiba's Yokkaichi Operations in Mie Prefecture, Japan.

Toshiba began the construction of Fab 5 in July 2010, and the new facility, equipped with manufacturing equipment funded by Toshiba and SanDisk, started volume production in July 2011. Fab 5 currently uses 24 nanometer (nm) process technology and its first wafer outs will be in August. In time, the fab will transition to more advanced process generations, starting with recently announced 19nm technology, the world's smallest process node.

Fab 5 incorporates earthquake-absorbing structures and integrates multiple power compensation techniques for protection against unexpected disruptions. LED lighting and power-saving manufacturing equipment will support the fab in securing Toshiba's goal of 12 percent less CO2 emissions than Fab 4. A wafer transportation system links the facility with Fabs 3 and 4 to support efficient manufacturing.

During a tour of the new chip factory, Toshiba's president Norio Sasaki said his company wanted to soon overtake rival Samsung Electronics as the world's leading maker of flash memory.

Flash Forward, Ltd., a joint venture between Toshiba and SanDisk established in September 2010 (50.1 percent owned by Toshiba and 49.9 percent by SanDisk), funded the advanced manufacturing equipment within the fab.


Previous
Next
Samsung Confirms 20nm Design Infrastructure with Test Chip Tape-out        All News        GLOBALFOUNDRIES Fabs in New York and Dresden Achieve Ready for Equipment Milestone
Samsung Confirms 20nm Design Infrastructure with Test Chip Tape-out     General Computing News      GLOBALFOUNDRIES Fabs in New York and Dresden Achieve Ready for Equipment Milestone

Get RSS feed Easy Print E-Mail this Message

Related News
Toshiba Delays Earnings Report, Announces Recovery Plan
Toshiba Informs SK hynix of New Plan to Sell Memory Business
Foxconn Is Bidding for Toshiba Chip Business
Western Digital Releases New iNAND 7350 Storage Solution Built on 3D NAND
Toshiba Starts Sampling 64-Layer, 512-gigabit 3D Flash Memory
Toshiba Books $6.3 Billion Writedown, Chairman Resigns
Toshiba Starts Construction of Fab 6 at Yokkaichi, Japan
Toshiba Announces First MN Series HDDs
HGST Introduces The Skyhawk NVMe-compliant PCIe SSDs
SK hynix Bids for Stake in Toshiba's Memory Chip Business
Western Digital Introduces First 512 Gigabit 64-Layer 3D NAND Chip
Micron's 2017 Roadmap Includes 64-layer 3D NAND And GDDR6

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .