Toshiba and SanDisk today celebrated the opening of Fab 5, the third 300mm wafer NAND fabrication facility at Toshiba's Yokkaichi Operations in Mie Prefecture, Japan.
Toshiba began the construction of Fab 5 in July 2010, and the new facility,
equipped with manufacturing equipment funded by Toshiba and SanDisk, started
volume production in July 2011. Fab 5 currently uses 24 nanometer (nm) process
technology and its first wafer outs will be in August. In time, the fab will
transition to more advanced process generations, starting with recently announced
19nm technology, the world's smallest process node.
Fab 5 incorporates earthquake-absorbing structures and integrates multiple power
compensation techniques for protection against unexpected disruptions. LED
lighting and power-saving manufacturing equipment will support the fab in securing
Toshiba's goal of 12 percent less CO2 emissions than Fab 4. A wafer transportation
system links the facility with Fabs 3 and 4 to support efficient manufacturing.
During a tour of the new chip factory, Toshiba's president Norio Sasaki said his company wanted to soon overtake rival Samsung Electronics as the world's leading maker of flash memory.
Flash Forward, Ltd., a joint venture between Toshiba and SanDisk established in
September 2010 (50.1 percent owned by Toshiba and 49.9 percent by SanDisk), funded
the advanced manufacturing equipment within the fab.