California-based Adesto Technologies, a developer of Conductive Bridging RAM (CBRAM), a low power and low cost CMOS non-volatile memory, today announced has received an award from DARPA to develop and demonstrate CBRAM memory devices that operate at sub-threshold voltages - a level that is more than 10 times
lower than standard Flash memory.
A successful demonstration of the CBRAM technology could lead to groundbreaking
memory and microcontroller devices that consume orders of magnitude lower power.
Adesto Technologies develops CBRAM non-volatile stand alone memory devices and
IP for embedding in a wide range of semiconductors. Recently, the company
acquired key patents and IP related to CBRAM technology from Qimonda. In
addition, Adesto announced the formation of a manufacturing partnership with
Altis Semiconductor which will lead to the introduction of the first CBRAM
product in 2011.
In addition to working with DARPA on sub-threshold non-volatile memories, Adesto
has partnered with Professor Ben Calhoun of the University of Virginia to
combine CBRAM with low voltage microelectronic circuits that he and his
colleagues are developing in order to build ultra low power Microcontrollers
(MCUs) and Systems-on-Chips (SOCs). "Adesto?s CBRAM is an outstanding memory
technology that we can easily integrate with our ultra low voltage MCUs and SOCs
in a standard CMOS process," said Professor Calhoun at the University of
Virginia. "We intend to demonstrate complete solutions within the next year."
CBRAM has a potential to replace existing memory technologies, although it would
have to compete with other forms of memory such as MRA. PCRAM, and Racetrack
Memory developed by IBM.