Friday, April 18, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
HTC Hired Ex-Samsung Marketing Officer
Xbox One Wolrdwide Sales Cross 5 million
Samsung Works With GLOBALFOUNDRIES On 14 nm FinFET Offering
Facebook To Find Nearby Friends
Console Sales Lift AMD's First Quarter Results
LG Expands 'Second Screen' TV Ecosystem With Open-Source SDK
Amazon Announces Kindle Service For Samsung Devices
Nokia Halts Sales Of Lumia 2520 Tablet
Active Discussions
help questions structure DVDR
Made video, won't play back easily
Questions durability monitor LCD
Questions fungus CD/DVD Media, Some expert engineer in optical media can help me?
CD, DVD and Blu-ray burning for Android in development
IBM supercharges Power servers with graphics chips
Werner Vogels: four cloud computing trends for 2014
Video editing software.
 Home > News > PC Parts > Hynix D...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, March 09, 2011
Hynix Develops World's First 16GB DDR3 Single Package Chip


Hynix Semiconductor said Wednesday it has developed the world's largest dynamic random access memory (DRAM) for a single package, using the Through Silicon Via (TSV) technology.

The company succeded in stacking eight 2GB DDR3 (8-bit) DRAM chips in a single package, resulting to a 16GB DRAM chip.

The existing MCP (Multi Chip Package) or PoP (Package On Package) chip stacking technologies are not sufficient enough to allow for stacking many DRAM chips, mainly due to wiring complexity and the increased size. TSVs are generally used to connect multiple ICs together in a package. In most packages, the stacked chips are wired together along their edges; this edge wiring slightly increases the length and width of the package and usually requires an extra "interposer" layer between the chips. In TSV packages, through-silicon vias replace edge wiring by creating vertical connections through the body of the chips. The resulting package has no added length or width and these layers are vertically connected layers behave as a single device.



By using TSV technology, ICs can pack a great deal of functionality into a small "footprint." In addition, critical electrical paths through the device can be drastically shortened, leading to faster operation.

Hynix said that TSV has advantages over previous technologies with a faster speed (50%) and lower power consumption (40%).

The new 16GB DDR3 DRAM chip can be used to meet demand for large-size memory in servers and other products, Hynix said. The company claims that large-size memory production technology using TSV will become a core part of the memory industry in two to three years.

On the other hand, TSV technology is the future memory chips, system semiconductors, image sensors (Image Sensor) and integrated into one package is expected to become a key technology.

Hynix expects to be able to start full-scale production of TSV 64GB DDR3 DRAM chips by 2013.


Previous
Next
Microsoft Research Showcases Natural User Interfaces        All News        Apple Reportedly Ties With TSMC On iPad2 Processor
HP CEO Envisions webOS Running On Every Single PC     PC Parts News      RIM's PlayBook Tablet To Include 7digital Music Store

Get RSS feed Easy Print E-Mail this Message

Related News
SK Hynix Develops First 128GB Module Built On 8Gb DDR4
Transcend Releases DDR3 RDIMM Modules For Mac Pro
Toshiba Sues SK Hynix For Leaking NAND Technology IP
Samsung Now Mass Producing 4Gb DDR3 Using 20 Nanometer Process Technology
JEDEC Standard Allows Development Of Higher Capacity DDR3 Modules
SK Hynix To Develop Its Own eMMC Controllers
Samsung, SK hynix Develop LPDDR4 Chips
SK hynix To Work With On TSV Chips: report
Micron And Broadcom Collaborate to Solve DRAM Timing Challenge
Kingston Announces 2800 MHz HyperX Predator Memory Kits
SK Hynix Starts Mass Production of 16nm NAND Flash
G.SKILL Releases DDR3L 2133 MHz 8 GB SO-DIMM Memory Kit

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .