Monday, May 02, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
You Can No Longer Use Google In Cortana searches
HP Releases New Chromebook for Home and Office
AMD and Nantong Fujitsu Microelectronics Close on Semiconductor Assembly and Test Joint Venture
Google's Pichai Sees the End of Computers
Amazon Reports Strong Quarter
Sony Reports Loss But PlayStation Keeps Performing Well
Japan Display Showcase The Latest In Display Technologies In SID DISPLAY WEEK 2016
Strong Galaxy S7 Sales Keep Samsung's Profit High
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > Mobiles > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Monday, February 21, 2011
Samsung Develops Mobile DRAM with Wide Interface


Samsung today announced the development of 1 gigabit (Gb) mobile DRAM with a wide I/O interface, using 50 nanometer class process technology.

The new wide I/O mobile DRAM will be used in mobile applications, such as smartphones and tablet PCs.

"Following the development of 4Gb LPDDR2 DRAM (low-power DDR2 dynamic random access memory) last year, our new mobile DRAM solution with a wide I/O interface represents a significant contribution to the advancement of high-performance mobile products," said Byungse So, senior vice president, memory product planning &application engineering at Samsung Electronics. "We will continue to aggressively expand our high-performance mobile memory product line to further propel the growth of the mobile industry."

The new 1Gb wide I/O mobile DRAM can transmit data at 12.8 gigabyte (GB) per second, which increases the bandwidth of mobile DDR DRAM (1.6GB/s) eightfold, while reducing power consumption by approximately 87 percent. The bandwidth is also four times that of LPDDR2 DRAM (which is approximately 3.2GB/s).

To boost data transmission, Samsung's wide I/O DRAM uses 512 pins for data input and output compared to the previous generation of mobile DRAMs, which used a maximum of 32 pins. If you include the pins that are involved in sending commands and regulating power supply, a single Samsung wide I/O DRAM is designed to accommodate approximately 1,200 pins.

Following this wide I/O DRAM launch, Samsung is aiming to provide 20nm-class 4Gb wide I/O mobile DRAM sometime in 2013. The company's recent achievements in mobile DRAM include introducing the first 50nm-class 1Gb LPDDR2 DRAM in 2009 and the first 40nm-class 2Gb LPDDR2 in 2010.

Samsung will present a paper related to wide I/O DRAM technology at the 2011 International Solid-State Circuits Conference (ISSCC) being held from February 20 to 24 in San Francisco.

According to iSuppli, mobile DRAM's percentage of total annual DRAM shipments will increase from about 11.1 percent in 2010 to 16.5 percent in 2014.


Previous
Next
Toshiba Develops New Energy-Saving Flip-Flop Circuit        All News        JVC Kenwood to Merge Operations
Microsoft Releases First Windows Phone Update     Mobiles News      Verbatim Ships Mobile Keyboard for iPad and iPhone

Get RSS feed Easy Print E-Mail this Message

Related News
Strong Galaxy S7 Sales Keep Samsung's Profit High
Samsung Developer Conference Showcases New Smart TV Tools
Key Samsung Technologies That Enabled 10nm-Class DRAM
A Look at Samsung Foundry's Business Strategy
Samsung Galaxy S7 and S7 Edge Now Available in Pink Gold
Samsung Galaxy C Coming Next Month
Samsung Signs OLED Deal With Apple: report
Samsung Brings Its 2016 SUHD TV Line Up To The U.S.
Samsung, LG And Japan Display Invest In Japanese OLED Startup
Samsung Expects High First-quarter Profit
Samsung Granted Patent for Smart Contact Lenses
Samsung Starts Mass Producing First 10-Nanometer Class DRAM

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .