IBM and Samsung today announced they will collaborate on basic
research into new semiconductor materials, manufacturing processes
and other technologies.
The agreement calls for the two companies to jointly develop new
semiconductor process technology that can be used in a broad range of
applications - from smart phone handsets to communications
For the first time, Samsung researchers will join IBM scientists in
the Semiconductor Research Alliance at the Albany Nanotech Complex,
Albany, N.Y., where researchers will investigate new materials and
transistor structures, as well as innovative interconnect and
packaging solutions for next-generation technology nodes. The
research developments from this joint activity are planned to enable
the delivery of industry leading silicon solutions that are optimized
for performance, power consumption and size.
"We are pleased to have our top-level scientists involved with the
cutting-edge research that's taking place at the Albany Nanotech
Center," said ES Jung, senior vice president of technology
development, System LSI Division, Samsung Electronics. "This should
further enhance our joint efforts to continue technology leadership
well into the future."
New process technology developed by the companies is planned to
extend leadership in mobile computing as well as other high
performance applications. For consumers, a new generation of devices
- smarter, connected and more mobile - will require essential
semiconductor breakthroughs to keep pace with technology trends (i.e.
the mobile web, cloud computing,) and users' loftier expectations
around performance and reliability.
"Collaborative innovation will be critical if the semiconductor
industry is to continue driving new forms of consumer electronics and
new methods of computing," said Michael Cadigan, general manager, IBM
Microelectronics. "That's why we're excited to have Samsung
scientists working with us at the most fundamental stages of the R&D
The agreement also renews IBM and Samsung's joint process development
agreement (JDA) to multiple nodes starting at 20nm. IBM and Samsung
plan to develop advanced technologies for foundry customers, enabling
high-performance, energy-efficient chips at 20nm and beyond. To
further enhance the JDA, Samsung's Semiconductor R&D center will also
participate in development contribution.
Solutions for CMOS technology at 20-nanometers and beyond will be
presented at the Common Platform Technology forum on January 18, 2011
at Santa Clara Convention center. Senior executives from
GLOBALFOUNDRIES, ARM and Qualcomm will also speak at the event. Forum
details can be found at www.commonplatform.com.