Tuesday, April 25, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Huawei Regains Smartphone Lead in China: Canalys
Xiaomi Launches Intelligent Sneakers Powered By Intel Curie Chip
Google Tweaks Web Ranking algorithm To Tackle Fake News
Apple To Educate Consumers Around Its Products Through "Today at Apple" Programs In Apple Stores
Wikipedia Founder's Response to Fake News Is The Wikitribune Website
3D-NAND to Become Mainstream This Year
New VIZIO SmartCast M-Series Ultra HD HDR XLED Plus Display Collection Released
6-Inch ZTE MAX XL Smartphone Launching For $130
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, January 04, 2011
Samsung Develops First DDR4 DRAM, Using 30nm Class Technology


Samsung announced today that it completed development of the industry's first DDR4 DRAM module last month, using 30 nanometer (nm) class process technology.

"Samsung has been actively supporting the IT industry with our green memory initiative by coming up with eco-friendly, innovative memory products providing higher performance and power efficiency every year," said Dong Soo Jun, president, memory division, Samsung Electronics. "The new DDR4 DRAM will build even greater confidence in our cutting-edge green memory, particularly when we introduce four-gigabit (Gb) DDR4-based products using next generation process technology for mainstream application."

The new DDR4 DRAM module can achieve data transfer rates of 2.133 gigabits per second (Gbps) at 1.2V, compared to 1.35V and 1.5V DDR3 DRAM at an equivalent 30nm-class process technology, with speeds of up to 1.6Gbps. When applied to a notebook, it reduces power consumption by 40 percent compared to a 1.5V DDR3 module.

The module makes use of Pseudo Open Drain (POD), a new technology that has been adapted to high-performance graphic DRAM to allow DDR4 DRAM to consume just half the electric current of DDR3 when reading and writing data.

By employing new circuit architecture, Samsung's DDR4 will be able to run from 1.6 up to 3.2Gbps, compared to today's typical speeds of 1.6Gbps for DDR3 and 800Mbps for DDR2.

Late last month, Samsung provided 1.2V 2 gigabyte (2GB) DDR4 unbuffered dual in-line memory modules (UDIMM) to a controller maker for testing.

Samsung now plans to work closely with a number of server makers to help insure completion of JEDEC standardization of DDR4 technologies in the second half of this year.



Previous
Next
HP Unveils New Lineup of Desktops        All News        Samsung Announces USB 3.0 External Hard Disk Drives
HP Unveils New Lineup of Desktops     PC Parts News      Samsung Announces USB 3.0 External Hard Disk Drives

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Develops Mobile Chip for IoT Applications, Eyes MRAM Embedded Memory
Samsung Galaxy S8 and S8+ Are Launching With Google Play
Samsung To Patch Galaxy S8 Display Issue
Galaxy S8 Materials Costs More Than Any Previous Versions, Teardown Reveals
Analyst Sees An Upcoming Galaxy Note8 With A Bigger Screen, Dual Cameras
Samsung To Start Producing Faster, 2nd Generation 10nm Chips By The End Of the Year
Samsung Galaxy Book 2-in-1 Available Next Month Starting $630
Samsung Says Galaxy S8's 'red-tinted' Display Is Not A Defect
Samsung's DRAM Roadmap
Samsung Galaxy S8 pre-orders Surpass S7's
Samsung Releases Gear S3 Value Pack Update
Samsung Forecasts Strong Q1 Profit, Leaves The Note 7 Fiasco Behind

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .