Sunday, April 30, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Hacker Gets Access To Unreleased "Orange Is The New Black" Netflix Episodes
Turkey Blocks Access To Wikipedia
Qualcomm Slashes Profit Expectations As Apple Refuses To Pay Royalty Payments
Kodi Clarifies DRM Stance, Shuts Down Rumors
ASML Countersues Nikon Over Alleged Patent Infringement
Image Sensors, Batteries And Playstation Boosts Sony's Profit
Cost Cuts Start Paying Off For Sharp
New Nintendo 2DS XL Gaming Handheld System Coming On July 28
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Hynix, ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, December 08, 2010
Hynix, IBM And Samsung Talk About Latest STT RAM Developments at IEDM


During the International Electron Device Meeting (IEDM) in Sans Francisco this week, IBM, Samsung and the Hynix presented papers on Spin torque MRAM, or STT RAM.

Spin torque MRAM, or STT RAM is a next-generation MRAM technology. The nonvolatile memory technology is said to combine high speed operations with low power.

Samsung Electronics has tested STT-MRAM for the replacement of DRAM and NOR.

"For competition with DRAM, STT-MRAM unit cell size should be reduced to 6 ~ 8F2 and switching current density is required to be less than 1 MA/cm2. Here, we report that the cell characteristics of on-axis STT-MRAM with 6 ~ 8F2 are similar to those of the off-axis STT-MRAM with 12 ~ 16F2. In addition, we suggest a novel MTJ with the operation current density of 0.8 MA/cm2. These results open a way to scale STT-MRAM down to sub-30 nm node using present technology. By further material engineering of ferromagnetic electrode and MTJ structure design, the usage of present technology could be extended down to sub-20 nm node," Samsung said.

Hynix Semiconductor Inc. and Grandis Inc. are taking another approach.

"To compete with existing memories, the emerging memory should have a comparable unit cell dimension. We demonstrated the 64Mbit STT-RAM technology with a 14F2 cell at the 54nm node. The compact cell can provide a large enough current drivability and also a stable MTJ performance," the companies said.

Hynix also talked about the challenges in scaling semiconductor memory technologies. On DRAM and NAND Flash the technology scaling-down is at risk below 20nm, the company said. Hynix introduced some recent progress on overcoming scaling challenges of current and new memory technologies and also reviewed some of the possible technology replacements are reviewed.

IBM-MagIC MRAM Alliance-the joint MRAM venture between IBM and TDK Corp.-disclosed details of its technology-a perpendicular spin torque MRAM. In the paper entitled "Switching Distributions and Write Reliability of Perpendicular Spin Torque MRAM," the companies reported "data from 4-kbit spin torque MRAM arrays using tunnel junctions (TJs) with magnetization perpendicular to the wafer plane.

"We show for the first time the switching distribution of perpendicular spin torque junctions," according to the paper. "The percentage switching voltage width, alpha(Vc)/ = 4.4 percent, is sufficient to yield a 64-Mb chip," according to the paper.

"Furthermore we report switching probability curves down to error probabilities of 5x10-9 per pulse which do not show the anomalous switching seen in previous studies of in-plane magnetized bits."


Previous
Next
DNP Develops Technology to Prevent Scintillation on Projectors and Displays Using Laser Light Sources        All News        Netflix To Stream Disney-ABC Content
Gartner Says Worldwide Semiconductor Revenue Increased in 2010     General Computing News      NFC Forum Launches Certification Program

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung And Apple Maintain Top Spots in Smartphone Market
Apple Pay, Samsung Pay and Android Pay Set To Expand This Year
Samsung's Profit At 3-year high Thanks to Strong Memory Chip Sales
Samsung Develops Mobile Chip for IoT Applications, Eyes MRAM Embedded Memory
SK Hynix Reports Strong First Quarter Results
Samsung Galaxy S8 and S8+ Are Launching With Google Play
Samsung To Patch Galaxy S8 Display Issue
Galaxy S8 Materials Costs More Than Any Previous Versions, Teardown Reveals
Analyst Sees An Upcoming Galaxy Note8 With A Bigger Screen, Dual Cameras
Samsung To Start Producing Faster, 2nd Generation 10nm Chips By The End Of the Year
Samsung Galaxy Book 2-in-1 Available Next Month Starting $630
Samsung Says Galaxy S8's 'red-tinted' Display Is Not A Defect

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .