Thursday, September 29, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Amazon, Google, Facebook, Microsoft And IBM Establish Partnership on AI Best Practices
Panasonic Bendable, Twistable, Flexible Lithium-ion Battery Could Bring Revolution To Future Devices
Security Firm Claims Yahoo Hack Was Not State-sponsored
Toshiba, Tohoku Electric and Iwatani Start Study of World?s Largest Hydrogen Energy System
Spotify Close To But SoundCloud: report
CORSAIR Launches DOMINATOR PLATINUM Special Edition DDR4 Memory
Apple Partners With Deloitte In New Enterprise Push
Europol Says Ransomware Is A Top Cybercrime Threat
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Hynix, ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, December 08, 2010
Hynix, IBM And Samsung Talk About Latest STT RAM Developments at IEDM


During the International Electron Device Meeting (IEDM) in Sans Francisco this week, IBM, Samsung and the Hynix presented papers on Spin torque MRAM, or STT RAM.

Spin torque MRAM, or STT RAM is a next-generation MRAM technology. The nonvolatile memory technology is said to combine high speed operations with low power.

Samsung Electronics has tested STT-MRAM for the replacement of DRAM and NOR.

"For competition with DRAM, STT-MRAM unit cell size should be reduced to 6 ~ 8F2 and switching current density is required to be less than 1 MA/cm2. Here, we report that the cell characteristics of on-axis STT-MRAM with 6 ~ 8F2 are similar to those of the off-axis STT-MRAM with 12 ~ 16F2. In addition, we suggest a novel MTJ with the operation current density of 0.8 MA/cm2. These results open a way to scale STT-MRAM down to sub-30 nm node using present technology. By further material engineering of ferromagnetic electrode and MTJ structure design, the usage of present technology could be extended down to sub-20 nm node," Samsung said.

Hynix Semiconductor Inc. and Grandis Inc. are taking another approach.

"To compete with existing memories, the emerging memory should have a comparable unit cell dimension. We demonstrated the 64Mbit STT-RAM technology with a 14F2 cell at the 54nm node. The compact cell can provide a large enough current drivability and also a stable MTJ performance," the companies said.

Hynix also talked about the challenges in scaling semiconductor memory technologies. On DRAM and NAND Flash the technology scaling-down is at risk below 20nm, the company said. Hynix introduced some recent progress on overcoming scaling challenges of current and new memory technologies and also reviewed some of the possible technology replacements are reviewed.

IBM-MagIC MRAM Alliance-the joint MRAM venture between IBM and TDK Corp.-disclosed details of its technology-a perpendicular spin torque MRAM. In the paper entitled "Switching Distributions and Write Reliability of Perpendicular Spin Torque MRAM," the companies reported "data from 4-kbit spin torque MRAM arrays using tunnel junctions (TJs) with magnetization perpendicular to the wafer plane.

"We show for the first time the switching distribution of perpendicular spin torque junctions," according to the paper. "The percentage switching voltage width, alpha(Vc)/ = 4.4 percent, is sufficient to yield a 64-Mb chip," according to the paper.

"Furthermore we report switching probability curves down to error probabilities of 5x10-9 per pulse which do not show the anomalous switching seen in previous studies of in-plane magnetized bits."


Previous
Next
DNP Develops Technology to Prevent Scintillation on Projectors and Displays Using Laser Light Sources        All News        Netflix To Stream Disney-ABC Content
Gartner Says Worldwide Semiconductor Revenue Increased in 2010     General Computing News      NFC Forum Launches Certification Program

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Pay Adds Support for Coupons and Restore Function
Samsung Says Global Replacement Program for Galaxy Note7 Has Made Progress
Samsung Says Battery Not Related To Note 7 Fire Reports in China
Samsung Narrows Gap With Intel In Semiconductor Industry Ranking
How to Identify the New Galaxy Note7
Samsung Sells Stakes in ASML, Seagate, Rambus and Sharp
Samsung's Recall For The Galaxy Note 7 Smartphones In Official In The U.S.
Samsung's Software "Fix" For Galaxy Note 7 Limits Battery Recharges
HP To Buy Samsung's Printer Business For $1.05 billion
Samsung Urges Galaxy Note7 Users To Immediately Bring Their Phones For Replacement
US, Japan Aviation Authorities Warn Against Using Samsung Galaxy Note 7 On Planes
SK Hynix to Expand Production Of Image Sensors At New 300mm Factories

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .