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Monday, September 13, 2010
Rambus to Discuss Challenges for Next-Generation Mobile and Graphics Memory at Intel Developer Forum 2010


Rambus on Monday will talk about next-generation memory solutions for mobile and graphics applications at the Intel Developer Forum 2010. In addition, Rambus will exhibit demos of its innovations including its XDR memory product showcase.

During the session, Dr. Judy Chen, strategic development director and Dr. Steve Woo, technical director at Rambus will discuss how next-generation mobile and graphics systems share the need for higher-performance, power-efficient memory. They will outline techniques to help address the challenges of managing signal and power integrity, reducing component and board costs, and delivering multi-modal functionality.

Rambus will demonstrate its latest technology developments in the areas of mobile, gaming and graphics, and computing main memory solutions.

Mobile XDR Memory Architecture

Rambus claims that its XDR memory the fastest and most power-efficient memory for mobile applications. Capable of achieving data rates of 3.2 to 4.3 gigabits per second (Gbps) at a power efficiency of 2.2 milliwatts per gigabit per second (mW/Gbps), Mobile XDR memory is ideal for next-generation smartphones, netbooks, mobile gaming and mobile multimedia products.

DDR3 PHY Development Package

This high-performance, low-cost DDR3 memory controller interface solution is tailored for consumer electronics. The solutions is the first to demonstrate operation in working silicon at a data rate of 1866 megatransfers per second (MT/s) in a low-cost wire bond package.

XDR 2 Memory Architecture

Designed for scalability, power efficiency and manufacturability, the XDR 2 memory architecture is a complete memory solution suited for high-performance gaming, graphics and multi-core computing applications.

DDR3 Module Threading Demonstration

Driven by multi-core computing, virtualization and processor integration trends, the industry needs a next-generation main memory solution capable of achieving data rates of up to 3200MT/s in the same, or lower power envelope as the current DDR3 1600MT/s memory solution. This system demo will show how Module Threading can be used to boost memory throughput at reduced power.


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