Saturday, December 03, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Apple Sent Letter NHTSA Asking About Autonomous Vehicle Guidelines
Apple Blames Battery For Random iPhone 6s Shutdowns
Microsoft Stores Reveal Xbox Discounts And Offers
Researcher Bypasses The iOS Activation Lock
Facebook To Offer $20 million To Improve Silicon Valley Communities
Xiaomi Launches Voice -controller Mi Wi-Fi Speaker
Xiaomi "Denies" Mi MIX Nano Existence
Nokia D1C Specs Leak
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Intel, ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Saturday, August 21, 2010
Intel, Micron First to Sample 3-Bit-Per-Cell NAND Flash Memory on 25-Nanometer Silicon Process Technology


Intel and Micron Technology this week announced the delivery of 3-bit-per-cell (3bpc) NAND flash memory on 25-nanometer (nm) process technology, producing the industry's highest capacity, smallest NAND device.

The companies have sent initial product samples to select customers. Intel and Micron expect to be in full production by the end of the year.

The new 64-gigabit (Gb) 3bpc on 25nm memory device offers improved cost efficiencies and higher storage capacity for the competitive USB, SD (Secure Digital) flash card and consumer electronics markets. Flash memory is primarily used to store data, photos and other multimedia for use in capturing and transferring data between computing and digital devices such as digital cameras, portable media players, digital camcorders and all types of personal computers. These markets are under constant pressure to provide higher capacities at low prices.

Designed by the IM Flash Technologies (IMFT) NAND flash joint venture, the 64-Gb, or 8 gigabyte (GB), 25nm lithography stores three bits of information per cell, rather than the traditional one bit (single-level cell) or two bits (multi-level cell). The industry also refers to 3bpc as triple-level cell (TLC.)

The device is more than 20 percent smaller than the same capacity of Intel and Micron's 25nm MLC, which is currently the smallest single 8GB device in production today. Small form-factor flash memory is especially important for consumer end-product flash cards given their intrinsic compact design. The die measures 131mm2 and comes in an industry-standard TSOP package.



Previous
Next
Panasonic to Strengthen It Plasma Production in China        All News        Seagate And Samsung To Jointly Develop Controller Technology For Enterprise SSDs
AMD Appoints Former Intel Executive As Chief Technology Officer     General Computing News      Apple releases iOS 4.0.2 for iPhone and 3.2.2 for iPad, breaks jailbrake

Get RSS feed Easy Print E-Mail this Message

Related News
Intel Extreme Masters Season 11 World Championship Returns to Katowice, Poland
Intel Teams Up With Delphi and Mobileye for Self-Driving Cars
A Closer Look At SK Hynix's 3D NAND
Go Master Cho Wins Final Game Against DeepZenGo AI Platform
Intel Unveils Strategy for Artificial Intelligence
Intel Prepares its AI Strategy, Announces New Xeon Chips And An FPGA Card
GE Buts Artificial Intelligence Startups
Intel Could Add Wi-Fi and USB 3.1 Support In Future Chipsets
Facebook Turns To AI To Offer New Experiences
SK hynix To Start Mass Production Of 48-layer 3D-NAND Chips
Toshiba Expands 3D Flash Memory Production Capacity In New Fabrication Facility at Yokkaichi
Intel Announces Drone Designed For Light Shows

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .