Wednesday, December 02, 2015
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Amazon Awarded With Augmented Reality Patents
Motorola Moto 360 Sport Watch Launching Next Month
Lenovo Unveils the ThinkPad P40 Yoga
Samsung Launches Web Browser for Gear VR
PRIV by BlackBerry Gets Its First Update
IDC Sees Transition To Detachable Tablets
Patriot Introduces 128GB Compact USB Flash Drives
AMD Launches the Low Profile FirePro W4300 Graphics Card for CAD
Active Discussions
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
How to burn a backup copy of The Frozen Throne
Help make DVDInfoPro better with dvdinfomantis!!!
Copied dvd's say blank in computer only
menu making
Optiarc AD-7260S review
 Home > News > General Computing > Intel, ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Saturday, August 21, 2010
Intel, Micron First to Sample 3-Bit-Per-Cell NAND Flash Memory on 25-Nanometer Silicon Process Technology

Intel and Micron Technology this week announced the delivery of 3-bit-per-cell (3bpc) NAND flash memory on 25-nanometer (nm) process technology, producing the industry's highest capacity, smallest NAND device.

The companies have sent initial product samples to select customers. Intel and Micron expect to be in full production by the end of the year.

The new 64-gigabit (Gb) 3bpc on 25nm memory device offers improved cost efficiencies and higher storage capacity for the competitive USB, SD (Secure Digital) flash card and consumer electronics markets. Flash memory is primarily used to store data, photos and other multimedia for use in capturing and transferring data between computing and digital devices such as digital cameras, portable media players, digital camcorders and all types of personal computers. These markets are under constant pressure to provide higher capacities at low prices.

Designed by the IM Flash Technologies (IMFT) NAND flash joint venture, the 64-Gb, or 8 gigabyte (GB), 25nm lithography stores three bits of information per cell, rather than the traditional one bit (single-level cell) or two bits (multi-level cell). The industry also refers to 3bpc as triple-level cell (TLC.)

The device is more than 20 percent smaller than the same capacity of Intel and Micron's 25nm MLC, which is currently the smallest single 8GB device in production today. Small form-factor flash memory is especially important for consumer end-product flash cards given their intrinsic compact design. The die measures 131mm2 and comes in an industry-standard TSOP package.

Panasonic to Strengthen It Plasma Production in China        All News        Seagate And Samsung To Jointly Develop Controller Technology For Enterprise SSDs
AMD Appoints Former Intel Executive As Chief Technology Officer     General Computing News      Apple releases iOS 4.0.2 for iPhone and 3.2.2 for iPad, breaks jailbrake

Get RSS feed Easy Print E-Mail this Message

Related News
Intel Optane Memory Products Coming Next Year
Intel Advances High Performance Computing System Designs
Micron's Persistent Memory Solution Combines DRAM Performance With NAND Flash Reliability
Intel Expands The Xeon processor D-1500 Product Family And Unveils New Ethernet Controllers
Google Open Sources TensorFlow Machine Learning System
Intel Unveils New IoT Platform
Facebook Reports Progress In Artificial Intelligence Research
Intel Introduces Smart Tiny House Concept For IoT Connected Devices
Intel To Invest In Non-Volatile Memory
Micron's XTRMFlash Memory Breaks Through NOR Flash Speed Limits
Intel Xeon Processor E3-1200 v5 Family Powers New Entry-level Workstations
Intel-Powered Arduino 101 Board Coming Next Year

Most Popular News
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2015 - All rights reserved -
Privacy policy - Contact Us .