Wednesday, February 10, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Apple Music On Sonos Now Available
SUNY Poly and GLOBALFOUNDRIES Announce $500M Research ProgramTo Accelerate Chip Technology
Intel To Focus On Energy Comsumption On Future Chips
Micron Outlines GDDR5X Plans
Sony’s New Laser Projectors Deliver Quality And with Quiet Operation
The Pirate Bay Has Started Streaming Content
Samsung to Showcase Display Technologies at ISE 2016
Intel To Remove Overclocking Loophole In Skylake Processors
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
How to burn a backup copy of The Frozen Throne
Help make DVDInfoPro better with dvdinfomantis!!!
Copied dvd's say blank in computer only
menu making
 Home > News > General Computing > Intel, ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Saturday, August 21, 2010
Intel, Micron First to Sample 3-Bit-Per-Cell NAND Flash Memory on 25-Nanometer Silicon Process Technology


Intel and Micron Technology this week announced the delivery of 3-bit-per-cell (3bpc) NAND flash memory on 25-nanometer (nm) process technology, producing the industry's highest capacity, smallest NAND device.

The companies have sent initial product samples to select customers. Intel and Micron expect to be in full production by the end of the year.

The new 64-gigabit (Gb) 3bpc on 25nm memory device offers improved cost efficiencies and higher storage capacity for the competitive USB, SD (Secure Digital) flash card and consumer electronics markets. Flash memory is primarily used to store data, photos and other multimedia for use in capturing and transferring data between computing and digital devices such as digital cameras, portable media players, digital camcorders and all types of personal computers. These markets are under constant pressure to provide higher capacities at low prices.

Designed by the IM Flash Technologies (IMFT) NAND flash joint venture, the 64-Gb, or 8 gigabyte (GB), 25nm lithography stores three bits of information per cell, rather than the traditional one bit (single-level cell) or two bits (multi-level cell). The industry also refers to 3bpc as triple-level cell (TLC.)

The device is more than 20 percent smaller than the same capacity of Intel and Micron's 25nm MLC, which is currently the smallest single 8GB device in production today. Small form-factor flash memory is especially important for consumer end-product flash cards given their intrinsic compact design. The die measures 131mm2 and comes in an industry-standard TSOP package.



Previous
Next
Panasonic to Strengthen It Plasma Production in China        All News        Seagate And Samsung To Jointly Develop Controller Technology For Enterprise SSDs
AMD Appoints Former Intel Executive As Chief Technology Officer     General Computing News      Apple releases iOS 4.0.2 for iPhone and 3.2.2 for iPad, breaks jailbrake

Get RSS feed Easy Print E-Mail this Message

Related News
Intel To Focus On Energy Comsumption On Future Chips
Micron Outlines GDDR5X Plans
Intel To Remove Overclocking Loophole In Skylake Processors
768 Gbit Micron 3D NAND Is Faster Than Samsung’s 256Gb V-NAND: ISSCC
New Skylake And Xeon Chips Power Latest Devices
Microsoft releases CNTK Deep Learning Toolkit
Intel, Tsinghua University and Montage Technology Collaborate to Bring Data Center Solutions to China
Intel Releases 6th Generation Intel Core vPro Processors
3D NAND Flash Memory Market is Heating Up
Intel Reports Full Year Revenue Despite Slow PC Sales
Intel To Patch Freezing Issues Of Skylake Processors Under Certain Workloads
Micron Envisions To Deliver 32GB SSDs

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .