Monday, December 18, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Samsung Galaxy A8, A8 Plus and LG K Series to Appear at CES
North Korea Behind attacks on Cryptocurrency Exchanges: report
BlackBerry Ends Support for Priv, Talks About the Future of BB10
Google to Shut Down Project Tango in March 2018
Facebook Admits Spending Time on Social Media is Bad for You
Facebook Will Start Putting Ads Before Videos
Samsung's Smart Speaker Coming Next Year
Internet Neutrality is Officially Dead
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Intel, ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Saturday, August 21, 2010
Intel, Micron First to Sample 3-Bit-Per-Cell NAND Flash Memory on 25-Nanometer Silicon Process Technology


Intel and Micron Technology this week announced the delivery of 3-bit-per-cell (3bpc) NAND flash memory on 25-nanometer (nm) process technology, producing the industry's highest capacity, smallest NAND device.

The companies have sent initial product samples to select customers. Intel and Micron expect to be in full production by the end of the year.

The new 64-gigabit (Gb) 3bpc on 25nm memory device offers improved cost efficiencies and higher storage capacity for the competitive USB, SD (Secure Digital) flash card and consumer electronics markets. Flash memory is primarily used to store data, photos and other multimedia for use in capturing and transferring data between computing and digital devices such as digital cameras, portable media players, digital camcorders and all types of personal computers. These markets are under constant pressure to provide higher capacities at low prices.

Designed by the IM Flash Technologies (IMFT) NAND flash joint venture, the 64-Gb, or 8 gigabyte (GB), 25nm lithography stores three bits of information per cell, rather than the traditional one bit (single-level cell) or two bits (multi-level cell). The industry also refers to 3bpc as triple-level cell (TLC.)

The device is more than 20 percent smaller than the same capacity of Intel and Micron's 25nm MLC, which is currently the smallest single 8GB device in production today. Small form-factor flash memory is especially important for consumer end-product flash cards given their intrinsic compact design. The die measures 131mm2 and comes in an industry-standard TSOP package.



Previous
Next
Panasonic to Strengthen It Plasma Production in China        All News        Seagate And Samsung To Jointly Develop Controller Technology For Enterprise SSDs
AMD Appoints Former Intel Executive As Chief Technology Officer     General Computing News      Apple releases iOS 4.0.2 for iPhone and 3.2.2 for iPad, breaks jailbrake

Get RSS feed Easy Print E-Mail this Message

Related News
Google Opening Artificial Intelligence Research Center in China
Intel Introduces Cost-optimized Pentium Silver and Intel Celeron Processors
Intel Uses Cobalt Interconnect for 10nm, Global Foundries Detail EUV Lithography for 7nm
IBM Says New POWER9-based AC922 Power Systems Offer 4x Deep-learning Framework Performance Over x86
IBM Scientists Demonstrate 10x Faster Machine Learning Using GPUs
Intel to Unveil Platform For Autonomous Cars at CES
Intel and Warner Partner to Develop In-Cabin Experiences in Autonomous Cars
Toshiba Unveils UFS Devices Based on 64-Layer, 3D Flash Memory
U.S. Government Warns Businesses About Vulnerabilities Of Management Engine in Intel Chips
Samsung to set up AI Research Center
Samsung Forecast to Top Intel as Larger Semiconductor Supplier in 2017
Samsung, SK Hynix and Micron Lead the Server DRAM Market

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .