Saturday, October 21, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
DVDFab Debuts 4K Ultra HD Copy Software
Razer Unveils New Broadcasting Camera and Microphone
Microsoft's Cortana Gets Into Smart Speakers Market With Harman Kardon Invoke
Samsung, LG Electronics are Lagging in Autonomous Car Race
TSMC Raises Forecasts for 2017 Due to 10nm Demand, Outlines 7 and 5nm Roadmap
Samsung Said to Have Placed Huge EUV Equipment Order From ASML
Samsung Launches the Ruggedized Galaxy Tab Active2 for Business
Intel Capital Announces $60 million of New Investments in Data-Focused Startups
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Intel, ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Saturday, August 21, 2010
Intel, Micron First to Sample 3-Bit-Per-Cell NAND Flash Memory on 25-Nanometer Silicon Process Technology


Intel and Micron Technology this week announced the delivery of 3-bit-per-cell (3bpc) NAND flash memory on 25-nanometer (nm) process technology, producing the industry's highest capacity, smallest NAND device.

The companies have sent initial product samples to select customers. Intel and Micron expect to be in full production by the end of the year.

The new 64-gigabit (Gb) 3bpc on 25nm memory device offers improved cost efficiencies and higher storage capacity for the competitive USB, SD (Secure Digital) flash card and consumer electronics markets. Flash memory is primarily used to store data, photos and other multimedia for use in capturing and transferring data between computing and digital devices such as digital cameras, portable media players, digital camcorders and all types of personal computers. These markets are under constant pressure to provide higher capacities at low prices.

Designed by the IM Flash Technologies (IMFT) NAND flash joint venture, the 64-Gb, or 8 gigabyte (GB), 25nm lithography stores three bits of information per cell, rather than the traditional one bit (single-level cell) or two bits (multi-level cell). The industry also refers to 3bpc as triple-level cell (TLC.)

The device is more than 20 percent smaller than the same capacity of Intel and Micron's 25nm MLC, which is currently the smallest single 8GB device in production today. Small form-factor flash memory is especially important for consumer end-product flash cards given their intrinsic compact design. The die measures 131mm2 and comes in an industry-standard TSOP package.



Previous
Next
Panasonic to Strengthen It Plasma Production in China        All News        Seagate And Samsung To Jointly Develop Controller Technology For Enterprise SSDs
AMD Appoints Former Intel Executive As Chief Technology Officer     General Computing News      Apple releases iOS 4.0.2 for iPhone and 3.2.2 for iPad, breaks jailbrake

Get RSS feed Easy Print E-Mail this Message

Related News
Intel Capital Announces $60 million of New Investments in Data-Focused Startups
Intel Health Application Platform Helps Health Care Providers Reduce Hospital Readmissions
Globalfoundries and Intel to Talk About 10, 7nm at IEDM
Intel and Mobileye Offer Present Algorithms to Prove the Safety of Autonomous Vehicles
Intel Advances Artificial Intelligence With Nervana Neural Network Processor
QLC NAND Flash to Succeed TLC NAND Next Year
AMD, Intel, ARM, IBM and Others Support the Open Neural Network Exchange Format for AI
Intel Delivers 17-Qubit Superconducting Chip with Advanced Packaging
Microsoft Ventures and Partners Offer $3.5M Award in AI Startups
8th Gen Intel Core Desktop Processors Available Today
Micron to Bring GDDR6N Memory to Networking Devices
Intel Secure Device Onboard Makes onboarding of Billions of Devices Simpler

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .