Wednesday, December 13, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Toshiba and Western Digital Reach Settlement, Agree to Strengthen Flash Memory Collaboration
Twitter Makes It Easier For Users to Create Threads
Tsinghua to Invest in China-based Lite-On Storage Plant
Facebook to Book Advertising Revenue Locally Following Pressure
New Radeon Software Adrenalin Edition Provides Amped-Up Connected Gaming
Nintendo Says Switch Sells 10 Million Worldwide
Toshiba Unveils Embedded NAND Flash Memory Products for Automotive Applications
FCC to Hand Over Internet Oversight to FTC
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Micron ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Thursday, July 01, 2010
Micron Introduces Third Generation Reduced Latency Memory


Micron Technology today introduced its third-generation reduced latency DRAM (RLDRAM 3 memory), a high-bandwidth memory technology that enables a more efficient transfer of information across the network.

As compared with previous generations, Micron's new RLDRAM 3 memory offers a further increase in density and speed, while minimizing latency and reducing power consumption for higher performing networking applications.

Micron said that it would continue to provide support for its current generation RLDRAM 2 technology. Additionally, Micron is transitioning its RLDRAM 2 product portfolio to the more advanced 50nm process technology, boosting system performance and lowering power consumption.

The primary features and benefits of Micron's new RLDRAM 3 memory include:

- Low latency: Sub 10-nanoseconds tRC, offering the industry's lowest random access latency
- Increased density: 576Mb-1Gb, giving flexibility for many designs
- Faster speeds: Reaches 2133Mb/s, providing faster access to data
- Greater energy efficiency: Familiar 1.2V IO and 1.35V core, for more power savings

Micron and its partners have validated its RLDRAM memory solutions for ease of integration into networking equipment. The company is currently working with leading FPGA companies including Altera Corporation and Xilinx to design RLDRAM 3 memory into their family of products.

Micron is expected to begin sampling its RLDRAM 3 device in the first half of 2011 and is currently working with its customers and enablers for their design considerations of RLDRAM 3 memory. Additionally, Micron expects to begin sampling 50nm RLDRAM 2 products in the fourth quarter of 2010.


Previous
Next
Firefox Home Submitted to Apple App Store        All News        Yahoo Launches Mail and Messenger Apps for Android
MIT Researchers Promise an Internet 100 Times as Fast     General Computing News      Opera 10.60 Final Available

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung, SK Hynix and Micron Lead the Server DRAM Market
Micron's 32GB NVDIMM Delivers 2933 MT/s Speeds to Eliminate Storage Bottlenecks
Micron to Bring GDDR6N Memory to Networking Devices
Micron Brings LPDDR4 and GDDR6 Memory to Autonomous Vehicles
UMC Indicted On Charges of Trade Secret, Following Micron's Suit
Micron Sold the Lexar Brand to Longsys
Micron Expands its NVDIMM-N Portfolio
Micron Advances Semiconductor R&D Capabilities with New Boise Facility
Micron's New Flagship 9200 NVMe Solid-State Storage Family is Blazingly Fast
Micron Posts Record Revenues in fiscal 3Q17
Micron Lexar Removable Storage Retail Business Discontinued
Crucial BX300 SSD Coming This Summer

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .