Monday, June 25, 2018
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
FCC to Seek for Flexible Use of C-band and 6GHz Airwaves
AMD Presents Modular Routing Design for Chiplet-based Systems
Software Business Continues to Work For BlackBerry
Apple Turns to the U.S. Patent Office to Invalidate Qualcomm Patents
Samsung Patents Bezel-less, Notch-free Smartphone Design
China is Home to Most Smartphone Vendors
VidCon 2018: Youtube Announces Memberships, Merchandise as Alternatives to Ads
Chatting With Google Assistant Gets More Natural
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, June 15, 2010
Toshiba develops Silicon Nanowire Transistor for 16nm Generation and Beyond


Toshiba has developed a breakthrough technology for a nanowire transistor, a major candidate for a 3D structure transistor for system LSI in the 16nm generation and beyond.

The company has achieved a 1mA/μm on-current, the world's highest level for a nanowire transistor, by reducing parasitic resistance and improving the on-current level by 75%. This is a major step towards practical application of nanowire transistors. This achievement will be presented at the 2010 Symposium on VLSI Technology in Hawaii, on June 17.

When the size of current planar transistors scales smaller, current leakage between the source and the drain at its off-stage (off-leakage) will become a critical problem in securing circuit reliability. To overcome this, transistors with a 3D structure, including silicon nanowire transistors, are being investigated as candidates for future generations of devices. The silicon nanowire transistor can suppress off-leakage and achieve further short-channel operation, because its thin wire-shaped silicon channel (nanowire channel) is effectively controlled by the surrounding gate. However, parasitic resistance in the nanowire-shaped source/drain, especially in the region under the gate sidewall, degrades the on-current.

Toshiba overcame this problem by optimizing gate fabrication and significantly reducing the thickness of the gate sidewall, from 30nm to 10nm. Low parasitic resistance was realized by epitaxial silicon growth on the source/drain with a thin gate sidewall, which leads to a 40% increase in on-current. The company also achieved a further 25% increase in current performance by changing the direction of the silicon nanowire channel from the <110> to <100> plane direction. Utilizing these technologies, Toshiba has demonstrated an on-current level of 1mA/μm, when the off-current is 100nA/μm, a 75% increase in the on-current at the same off-current condition.

Toshiba's work was partly supported by New Energy and Industrial Technology Development Organization (NEDO) 's Development of Nanoelectronic Device Technology.



Previous
Next
Samsung Introduces New Smartphones at CommunicAsia 2010        All News        IBM, ARM, Samsung, GLOBALFOUNDRIES and Synopsys Announce Delivery of New Chip Platform
TSMC New Standard Cell Slim Library Reduces Logic Area     General Computing News      IBM, ARM, Samsung, GLOBALFOUNDRIES and Synopsys Announce Delivery of New Chip Platform

Get RSS feed Easy Print E-Mail this Message

Related News
Toshiba Delivers RM5 vSAS Series SSDs Targeting SATA Applications
Value-Optimized Toshiba RC100 NVMe SSDs Now Available
Sharp to buy Toshiba's PC Business
Sharp close to Buying Toshiba's PC Business
Bain Capital to Support Toshiba Memory's Future Acquisitions
Toshiba Completes $18bn Sale of Flash Memory Unit
Toshiba Introduces New XS700 Series of Portable SSDs
Toshiba's Twin-Field Quantum Key Distribution Extends the Limit of Intercity Secure Communications
Toshiba Confirms Approval of $18 billion Chip Unit Sale by China
China Finally Approves Toshiba's Plan to Sell Its Memory Chip Unit: report
Toshiba Weighs Memory Chip Unit Options
Toshiba Releases New Surveillance, Video Streaming Laptop and Desktop Hard Drives

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2018 - All rights reserved -
Privacy policy - Contact Us .