Tuesday, April 24, 2018
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Samsung Unveiled New Onyx Cinema LED Screen at CinemaCon
Samsung's Fastest 970 PRO and EVO NVMe SSDs Are Launching Worldwide
Music Streaming Becomes Largest Revenue Source, Physical Sales Decline
New Wi-Fi Capabilities Provide Context-aware Services
Facebook Outlines Internal Enforcement Guidelines For the First time
CyberLink Launches First AI Style Video Editing Plugin for Windows PC
Amazon to Bring Packages Inside Your Locked Car
Xiaomi Takes the Lead in the Indian Smartphone Market
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, June 15, 2010
Toshiba develops Silicon Nanowire Transistor for 16nm Generation and Beyond


Toshiba has developed a breakthrough technology for a nanowire transistor, a major candidate for a 3D structure transistor for system LSI in the 16nm generation and beyond.

The company has achieved a 1mA/μm on-current, the world's highest level for a nanowire transistor, by reducing parasitic resistance and improving the on-current level by 75%. This is a major step towards practical application of nanowire transistors. This achievement will be presented at the 2010 Symposium on VLSI Technology in Hawaii, on June 17.

When the size of current planar transistors scales smaller, current leakage between the source and the drain at its off-stage (off-leakage) will become a critical problem in securing circuit reliability. To overcome this, transistors with a 3D structure, including silicon nanowire transistors, are being investigated as candidates for future generations of devices. The silicon nanowire transistor can suppress off-leakage and achieve further short-channel operation, because its thin wire-shaped silicon channel (nanowire channel) is effectively controlled by the surrounding gate. However, parasitic resistance in the nanowire-shaped source/drain, especially in the region under the gate sidewall, degrades the on-current.

Toshiba overcame this problem by optimizing gate fabrication and significantly reducing the thickness of the gate sidewall, from 30nm to 10nm. Low parasitic resistance was realized by epitaxial silicon growth on the source/drain with a thin gate sidewall, which leads to a 40% increase in on-current. The company also achieved a further 25% increase in current performance by changing the direction of the silicon nanowire channel from the <110> to <100> plane direction. Utilizing these technologies, Toshiba has demonstrated an on-current level of 1mA/μm, when the off-current is 100nA/μm, a 75% increase in the on-current at the same off-current condition.

Toshiba's work was partly supported by New Energy and Industrial Technology Development Organization (NEDO) 's Development of Nanoelectronic Device Technology.



Previous
Next
Samsung Introduces New Smartphones at CommunicAsia 2010        All News        IBM, ARM, Samsung, GLOBALFOUNDRIES and Synopsys Announce Delivery of New Chip Platform
TSMC New Standard Cell Slim Library Reduces Logic Area     General Computing News      IBM, ARM, Samsung, GLOBALFOUNDRIES and Synopsys Announce Delivery of New Chip Platform

Get RSS feed Easy Print E-Mail this Message

Related News
Toshiba Weighs Memory Chip Unit Options
Toshiba Releases New Surveillance, Video Streaming Laptop and Desktop Hard Drives
China Opposes SK hynix-Toshiba Deal
Toshiba Delays Memory Chip Unit Sale
Toshiba Memory to Make New Investment in Production Equipment for Fab 6 at Yokkaichi Operation
Toshiba Launches KumoScale NVM Express over Fabrics Storage Software for Cloud Infrastructures
Toshiba Adds 64-layer BiCS CD5, XD5 and HK6-DC Models to Data Center SSD Lineup
Western Digital to Inject $4.6bn in Toshiba Memory
Toshiba Completes Transfer of its TV Business to Chinese Hisense Group
Toshiba Releases 2TB Hard Disk Drive for Notebooks
Toshiba Reveals Fresh Canvio Portable Hard Drive Models
Toshiba Officially Unveils Mainstream RC100 NVMe SSD Series

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2018 - All rights reserved -
Privacy policy - Contact Us .