Tuesday, August 22, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Intel First 8th generation Processors Released
Pre-Orders Start for the Xbox One X Project Scorpio Edition
LG ProBeam UST and MiniBeam Projectors Light Up at IFA 2017
HTC Vive Reduces Price By $200
New Samsung Notebook 9 Laptop is Coming Next Month
Samsung to Launch 49-inch QLED Gaming Monitor at Gamescom 2017
YouTube TV expands to new markets
Facebook Tests News Stories Customized to Users' Interests
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, June 15, 2010
Toshiba develops Silicon Nanowire Transistor for 16nm Generation and Beyond


Toshiba has developed a breakthrough technology for a nanowire transistor, a major candidate for a 3D structure transistor for system LSI in the 16nm generation and beyond.

The company has achieved a 1mA/μm on-current, the world's highest level for a nanowire transistor, by reducing parasitic resistance and improving the on-current level by 75%. This is a major step towards practical application of nanowire transistors. This achievement will be presented at the 2010 Symposium on VLSI Technology in Hawaii, on June 17.

When the size of current planar transistors scales smaller, current leakage between the source and the drain at its off-stage (off-leakage) will become a critical problem in securing circuit reliability. To overcome this, transistors with a 3D structure, including silicon nanowire transistors, are being investigated as candidates for future generations of devices. The silicon nanowire transistor can suppress off-leakage and achieve further short-channel operation, because its thin wire-shaped silicon channel (nanowire channel) is effectively controlled by the surrounding gate. However, parasitic resistance in the nanowire-shaped source/drain, especially in the region under the gate sidewall, degrades the on-current.

Toshiba overcame this problem by optimizing gate fabrication and significantly reducing the thickness of the gate sidewall, from 30nm to 10nm. Low parasitic resistance was realized by epitaxial silicon growth on the source/drain with a thin gate sidewall, which leads to a 40% increase in on-current. The company also achieved a further 25% increase in current performance by changing the direction of the silicon nanowire channel from the <110> to <100> plane direction. Utilizing these technologies, Toshiba has demonstrated an on-current level of 1mA/μm, when the off-current is 100nA/μm, a 75% increase in the on-current at the same off-current condition.

Toshiba's work was partly supported by New Energy and Industrial Technology Development Organization (NEDO) 's Development of Nanoelectronic Device Technology.



Previous
Next
Samsung Introduces New Smartphones at CommunicAsia 2010        All News        IBM, ARM, Samsung, GLOBALFOUNDRIES and Synopsys Announce Delivery of New Chip Platform
TSMC New Standard Cell Slim Library Reduces Logic Area     General Computing News      IBM, ARM, Samsung, GLOBALFOUNDRIES and Synopsys Announce Delivery of New Chip Platform

Get RSS feed Easy Print E-Mail this Message

Related News
Toshiba's SG6 SSD Client SSD Uses 64-Layer 3D Flash Memory
Toshiba Announces NVMe over Fabrics Software Technology, Enterprise-Class SSDs with 64-Layer 3D Flash Memory
Toshiba Stops Blocking Western Digital Access to Chip JV, Invests in new chip line without Western Digital
Toshiba Unveils Single Package NVMe Client SSD Utilizing 64-Layer, 3D Flash Memory
Toshiba to Notify Western Digital Before Closing a Memory Sale
Toshiba TR200 SSD Series Uses 64-Layer 3D Flash Memory
Toshiba Resumed Blocking Western Digital Access to JV Database
Court Says Western Digital Should Have Access Toshiba's Technical Databases
Toshiba in Talks with Western Digital, Foxconn Over Memory Unit Sale
Western Digital Responds to Toshiba's Actions
Toshiba Delays Chip Unit Deal, Sues Western Digital
Western Digital Resubmits Bid for Toshiba Chip Unit

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .