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Monday, April 19, 2010
Samsung Producing First Higher-performing 20nm-class NAND Flash Memory


Samsung Electronics said Monday it began mass producing of 20 nanometer (nm) class NAND chips for use in Secure Digital (SD) memory cards and embedded memory solutions.

Based on this technology, the introduction of 32 gigabit (Gb) MLC NAND will expand the company's memory card solutions for smart phones, high-end IT applications and high-performance memory cards.

Mr. Soo-In Cho, president, Memory Division, Samsung Electronics, said "In just one year after initiating 30nm-class NAND production, Samsung has made available the next generation node 20nm-class NAND, which exceeds most customers requirements for high-performance, high-density NAND-based solutions." He added, "The new 20nm-class NAND is not only a significant step forward in process design, but we have incorporated advanced technologies into it to enable substantial performance innovation."

Samsung's 20nm-class MLC NAND has a 50 percent higher productivity level than 30nm-class MLC NAND. The write performance of a 20nm-class-based, eight gigabyte (GB) and higher density, SD card is 30 percent faster than the 30nm-class NAND and it delivers a speed-class rating of 10 (read speed of 20MB/s, write speed of 10MB/s). Samsung claims that by applying cutting-edge process, design and controller technology, the compamy has secured reliability levels comparable to 30nm-class NAND.

Samsung Electronics first began producing 32Gb NAND with 30nm-class process technology in March 2009. Now it is shipping SD card samples to its customers that are built with 20nm-class 32Gb NAND and will expand production later this year.

Memory cards based in the 20nm-class will be available from 4GB through 64GB densities



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