Friday, February 24, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Samsung, Apple To Focus On Bio Authentication Services
Nokia Captured 9 Percent Global Feature Phone Marketshare in 2016
Secure Folder Now Available for Galaxy S7, Galaxy S7 edge
LG X Power2 Smartphne Packs A 4,500mAh Battery And A 5.5-inch Display
Samsung Introduces Measures to Enhance Transparency in Financial Donations
Google's Waymo Sues Uber Over Self-Driving Patents
New Razer Power Bank Will Charge Your Laptop, Smartphones
New HARMAN Infotainment System Integrates Apple CarPlay Through Wireless Connectivity
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > Mobiles > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, March 24, 2010
Toshiba to Build New NAND Fabrication Facility


In an effort to seize the No 1 NAND flash maker Samsung Electronics, Toshiba today announced that it would construct a new fabrication facility (fab) on a site next to Yokkaichi Operations, its memory production facility in Mie Prefecture.

Construction of the new fab, Fab 5, will start in July this year, Toshiba said.

Yokkaichi Operations currently has four NAND flash memory fabs. As demand for NAND memory begins to recover with the market penetration of smartphones and other new applications, and foreseeing further market expansion in the medium- and long-term, Toshiba recognizes that the time is right to construct a new fab.

By adding new production capacity, Toshiba expects to be able to respond quickly to market expansion in an effort to further strengthen its competitiveness in the semiconductor business.

The Fab 5's construction is expected to be completed in spring 2011. The scale of Fab 5 will be comparable with that of Fab 4, which is now in operation. The new fab will have a quake-absorbing structure, and be designed for minimal environmental impact. Energy-saving clean rooms and effective use of waste heat are expected to cut CO2 emissions to a level 12% lower than from Fab 4, Toshiba said.

Toshiba's share of global NAND flash revenues trailed closely behind Samsung's at the end of 2009, with both exceeding the 30% mark.

According to estimations, Toshiba's monthly production at its existing 12-inch NAND flash fabs - Fab 3 and Fab 4 - reached 150,000 and 110,000 wafers, respectively, in the first quarter of 2010. With SanDisk's capacity, the flash alliance could roll out 360,000 wafers a month.


Previous
Next
USITC To Inverstigate DRAM Patent Case        All News        New 250GB Hard Drive For The Xbox 360
Yahoo Launches Sketch-a-Search and Search iPhone Apps     Mobiles News      Sprint Unveils HTC WiMax Phone EVO 4G

Get RSS feed Easy Print E-Mail this Message

Related News
Toshiba Starts Sampling 64-Layer, 512-gigabit 3D Flash Memory
Toshiba Books $6.3 Billion Writedown, Chairman Resigns
Toshiba Starts Construction of Fab 6 at Yokkaichi, Japan
Toshiba Announces First MN Series HDDs
SK hynix Bids for Stake in Toshiba's Memory Chip Business
Western Digital Introduces First 512 Gigabit 64-Layer 3D NAND Chip
Micron's 2017 Roadmap Includes 64-layer 3D NAND And GDDR6
Toshiba Faces New Lawsuits Over 2015 Accounting Scandal
Toshiba to Sell Part Of Its of Chip Unit
Toshiba May Spin Off Its Semiconductor Business
CES 2017: Toshiba Debuts Portege X20W 2-in-1 Convertible
SK Hynix Inc. to Invest $2.7 billion In Cutting Edge NAND Flash Fabs

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .