Hynix Semiconductor announced that it has developed the world?s
first 2Gb (Gigabit) Low Power DDR2 DRAM for mobile applications
using the company?s leading edge 40nm class process technology.
This product works at 1,066 Mbps (Megabits per second), which is
the fastest speed among the current mobile DRAM solutions and
provides a high density mobile DRAM solution in MCP (Multi Chip
Package) or PoP(Package on Package) types. The device operates at
such a low voltage of 1.2V and processes up to 4.26GB (Gigabytes)
of data per second with a 32-bit I/O, providing high bandwidth. It
also consumes 50% less power than existing mobile memory solution,
The product meets JEDEC standards and is designed for the use in
the next generation Smartphone, Smartbook and Tablet PC
applications. Hynix plans to start volume production of this
product in the first half of this year in order to meet the
increasing demand on high density mobile DRAMs for high
performance mobile applications.