Micron Technology today announced the company has combined the 34-nanometer (nm) 4Gb SLC NAND flash memory and 50nm 2Gb LPDDR to produce an advanced NAND-LPDDR MCP combination.
Micron?s new 4Gb NAND-2Gb LPDDR MCP is targeted at smart phones, personal media players and emerging MIDs where small form factor, low-cost and power savings are critical features.
Micron is currently sampling the 4Gb NAND-2Gb LPDDR MCP with customers and expects to be in volume production in early 2010. The 4Gb NAND-2Gb LPDDR combination is targeted at mainstream densities in today?s mobile devices, but Micron has the flexibility to support higher densities ? up to 8Gb NAND and 8Gb LPDDR ? as the mobile market integrates sophisticated multimedia functionality.
"With Micron?s 34nm 4Gb NAND and 50nm 2Gb LPDDR monolithic die used in this package, we are providing customers with the most advanced solution available in NAND-based MCPs," said Eric Spanneut, director of mobile memory marketing. "By combining the industry?s leading NAND and DRAM processes within our new generation of MCPs, we are able to easily accommodate the shift to high-density NAND devices as the industry progresses toward multi-function mobile devices."
In addition to its MCP portfolio, Micron also offers a host of memory products for the mobile market, including discrete NAND and LPDRAM parts, e∙MMC 4.4 managed NAND solutions and NANDcode software.