Tuesday, October 21, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
China Denies Apple's iCloud Hack Allegations
Samsung Galaxy KNOX Devices Approved for U.S. Government Classified Use
iPhone 6 Demand Help ARM's Growth
SK Hynix Develops High Density 16GB NVDIMM
Samsung Mass Produces 8-Gigabit DDR4 Based on 20 Nanometer Process Technology
Strong iPhone, Mac And App Store Sales Drive Apple's Record September Quarter Revenue And Earnings
Apple iOS 8.1 Available For Download
E FUN To Relase $179 Windows tablet
Active Discussions
Copied dvd's say blank in computer only
How to generate lots of different CDs quickly
Yamaha CRW-F1UX
help questions structure DVDR
Made video, won't play back easily
Questions durability monitor LCD
Questions fungus CD/DVD Media, Some expert engineer in optical media can help me?
CD, DVD and Blu-ray burning for Android in development
 Home > News > PC Parts > Micron ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, June 30, 2009
Micron Introduces New 34-Nanometer High-Density NAND Products


Micron Technology today announced mass production of new NAND flash memory products using its 34-nanometer (nm) process technology. Micron?s new 16- and 32-gigabit (Gb) NAND chips pair large capacity with performance.

The newly architected 32Gb multi-level cell (MLC) NAND chip is 17 percent smaller than Micron?s first-generation 32Gb chip. The 16Gb MLC NAND chip, at just 84mm˛, provides high-capacity in an ultra tiny package. Micron is also now sampling 8- and 16Gb single-level cell (SLC) NAND chips using the 34nm process.

Both products feature an ONFI 2.1 synchronous interface that delivers transfer speeds of up to 200 megabytes per second (MB/s). In comparison, traditional SLC NAND is limited to 40 MB/s. With this improved transfer speed, the interface delivers the fastest read and write throughputs offered in today?s NAND devices. And with solid state drives (SSDs) trending toward a SATA 6 Gb/second interface, the high-speed NAND interface enables manufacturers to design products that deliver twice the throughput of today?s existing SATA 3Gb/s solutions.

Additionally, Lexar Media, Inc. ? a subsidiary of Micron ? is taking advantage of Micron?s new 34nm NAND products by delivering a new range of flash memory cards and USB flash drives utilizing this technology. Lexar Media is utilizing Micron?s high-capacity 34nm technology in its memory cards, including the new Lexar Platinum II 32GB Secure Digital High Capacity (SDHC) memory card and the Lexar 16GB microSDHC mobile memory card. By the end of September, Micron?s new 34nm NAND will also be used in a wide range of Lexar microSD and microSDHC cards, Memory Stick Micro (M2) cards, and various capacities of Secure Digital, SDHC, CompactFlash, and Memory Stick PRO Duo cards. Additionally, Micron 34nm NAND will be used in Lexar?s JumpDrive USB flash drives, including JumpDrive Retrax, JumpDrive TwistTurn, JumpDrive FireFly, and JumpDrive Secure II Plus.

The first Lexar memory card to feature Micron?s new 32Gb NAND chip is the new 32GB Lexar Platinum II SDHC memory card.

In addition to its high capacity, the new Lexar Platinum II SDHC card is speed-rated at 60x (Class 4), offering a minimum-sustained write speed of 9MB per second that enables photo enthusiasts to take advantage of their camera?s burst-mode setting to capture many images in rapid succession. In addition, a minimum-sustained read speed of 12MB per second ensures fast transfers of images from the card to a host computer.

Micron?s tiny 16Gb, 34nm NAND chip, which is approximately one-third the size of a keyboard key, is ideal for ultra-small, high-capacity microSD cards, such as the Lexar 16GB microSDHC mobile memory card.


Previous
Next
Skype 3.0 for Windows Phones Available        All News        Global Gaming Factory X Acquires The Pirate Bay, Announced New File - Sharing Technology, p2p 2.0
AMD Unveils New Overclockable Phenom II X4 42 Black Edition TWKRL CPU     PC Parts News      Super Talent Ships New Line of Flash Disk Modules

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Starts Mass Production of First 3-bit 3D V-NAND
Micron Launches SDK For Its Automata Processor
Micron M600 SSD Released With Dynamic SLC Cache
NAND Flash Market to Grow in 2015
Tessera and Micron Execute New Technology and Patent License Agreements
Toshiba, Samsung Vie For 48-layer 3-D NAND Chips
Micron Announces Monolithic 8Gb DDR3 SDRAM
Samsung Maintains Its Global NAND Flash Leadership
Micron, SK Hynix May Invest In Taiwan SSD Controller Companies
Micron to Discuss Emerging Memories at 2014 Symposia on VLSI Technology and Circuits
NAND Flash Supplier Revenue Falls in First Quarter: TrendForce
Samsung Starts Mass Producing 32-Layer 3D V-NAND Flash Memory, Its 2nd Generation V-NAND Offering

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .