Monday, October 24, 2016
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
AT&T to Acquire Time Warner For $85.4B
Internet Disruptions Were Caused By Attacked Connected Devices
TSMC, GlobalFoundries/Samsung To Present Their 7nm Platforms At IEDM
Hon Hai Gains Apple Mac Orders From Quanta
AT&T In Advanced Talks With Time Warner On Merger
LG's Next Flagship G6 Smartphone Won't be Modular
Samsung to Exchange Galaxy Note 7 with New Galaxy S8
Qualcomm Said to Be Near A Deal With NXP
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > TSMC Re...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, June 17, 2009
TSMC Reports Foundry's First 28 Nanometer Low Power Platform Technology with Fully Functional 64Mb SRAM

Taiwan Semiconductor Manufacturing Company today announced it has successfully developed the first 28-nanometer (nm) low power technology that continues the scaling trend and extends Silicon Oxynitride (SiON)/poly usage beyond 32 nanometer with a dual/triple gate oxide process.

Other characteristics from this technology includes high density and low Vcc_min 6-T SRAM cells, low leakage transistors, well-proven conventional analog/RF/electrical fuse components and low-RC Cu-low-k interconnect. This development was presented today in a paper at the 2009 Symposia on VLSI Technology and Circuits in Kyoto, Japan.

Additionally, the paper reports good 64Mb SRAM functional yield with a competitive cell size of 0.127 um˛, and a raw gate density as high as 3900 kGate/mm˛ in this 28nm dual/triple gate oxide SoC technology. Good SRAM Vcc_min, electrical fuse, and analog performance have also been achieved which proves the manufacturability of this technology.

In the paper presented, low standby and low operating power transistors using SiON optimized with strain engineering and aggressive oxide thickness provide up to 25~40% speed improvement or 30~50% active power reduction over prior 45nm technology.

"This development was achieved through close collaboration with customers who are pushing their own boundaries of new applications requiring 28nm technology," said Dr. Jack Sun, vice president R&D at TSMC.

In the previous announcement made in September 2008, TSMC plans to deliver its 28nm process in early 2010 as a full node technology offering options of power-efficient high performance and lower power technologies. TSMC is now on track to deliver 28nm technology platforms to its customers.

Patriot's Launches 128GB Magnum USB Flash Drive        All News        Nero Summer Promotion: Nero 9 Plus Unlimited MP3 and Video Downloads
NEC and Toshiba Extend 28nm Chip Technology Development Agreements with IBM     General Computing News      GLOBALFOUNDRIES Details Advanced Technology Aimed at 22nm and Beyond

Get RSS feed Easy Print E-Mail this Message

Related News
TSMC, GlobalFoundries/Samsung To Present Their 7nm Platforms At IEDM
TSMC Sees Strong Quarter On Smartphone Chip Demand
TSMC To Use Different Processes And 3D Packages Across Future Design Platforms
TSMC 7nm Volume Production To Start In 1Q18
TSMC Foundry Market Share Drops in 2016
Samsung, TSMC And Intel Set To Expand Their Chip Production Capacities In 2H
TSMC To Follow The Extreme Ultraviolet Approach For 5nm
TSMC 2Q16 Profits Fall, Revenue Grew
TSMC to Boost R&D Spending To Accelerate Development Of More Advanced Chips
ARM And TSMC Validate First Multicore Test Chip Based on 10FinFET Technology
TSMC On Track To Move InFO Packaging Technology to Volume Production
TSMC Forecasts Slow Sales Amid Smartphone Slowdown

Most Popular News
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .