Sunday, December 04, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Apple Sent Letter NHTSA Asking About Autonomous Vehicle Guidelines
Apple Blames Battery For Random iPhone 6s Shutdowns
Microsoft Stores Reveal Xbox Discounts And Offers
Researcher Bypasses The iOS Activation Lock
Facebook To Offer $20 million To Improve Silicon Valley Communities
Xiaomi Launches Voice -controller Mi Wi-Fi Speaker
Xiaomi "Denies" Mi MIX Nano Existence
Nokia D1C Specs Leak
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > Mobiles > Micron ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Thursday, February 12, 2009
Micron to Produce 34nm Multi-Chip Package for High-End Mobile Phones


Micron is currently sampling the industry?s highest density all-in-one NAND-based multi-chip package (MCP), a solution including 16GB of multi-level cell (MLC) NAND, for high-end mobile phones.

The MCP leverages Micron?s 32 gigabit (Gb) 34-nanometer (nm) MLC NAND technology, enabling the company to achieve such high density in a single package.

Micron?s new all-in-one MCP stacks eight die to deliver 16GBs of on-board storage, therefore eliminating the need for an external memory card slot. And with the space savings that the device offers?which, in some designs, could mean board-space savings of up to 40%?handset manufacturers can capitalize on greater density, yet continue to deliver sleek handset designs.

Specific components of the 16GB all-in-one solution include:

- e-MMC memory, featuring one controller with four 32Gb, 34nm MLC NAND die. Micron?s e-MMC is a managed NAND solution that combines NAND flash with a high-speed MultiMediaCard (MMC) controller that improves overall system performance by easing device integration, providing greater error correction, and removing some of the NAND management burden placed on the host processor.
- Low-power DDR memory. 2Gbs of Micron?s Low-power DDR provides the necessary memory for quick access to frequently used data in the handset. And with its low power of 1.8 volts and other power-saving features, battery life is extended.
- 2Gb single-level cell (SLC) NAND.

Micron is currently sampling its 16GB-based MCP solution with select mobile handset designers and will be production ready in the first quarter of 2009. Micron is also sampling 4GB and 8GB densities of the all-in-one MCP solution, which are currently qualified for commercial production.

DDR2 Memory for Mobile Applications

Micron also today introduced its mobile low-power DDR2 (LPDDR2) portfolio aimed at improving performance and reducing memory power consumption for applications including traditional handsets, smartphones and popular mobile internet devices (MIDs). The mobile LPDDR2 technology was jointly developed between Micron and Nanya Technology Corporation through their joint development program. Micron?s mobile LPDDR2 portfolio includes 512 megabit (Mb) and 1Gb die, reaching 4Gb solutions.

Most mobile platforms today are designed with mobile LPDDR1, which operates at 1.8-volts. But as the mobile and PC industry continue to down this path of convergence, designing multifunctional, full-featured devices, there is a drive to make the technology within more power efficient and performance optimized. Meeting the low-power demand, Micron?s mobile LPDDR2 portfolio operates at 1.2-volts, reducing the device?s memory power consumption as much as 50-percent when compared to LPDDR1. Delivering on performance, Micron?s new mobile LPDDR2 solutions will deliver data transferring speeds of up to 1066Mb per second. This industry-leading mobile LPDDR2 speed provides the additional bandwidth necessary to boost the operating capability of mobile applications, including running more functions simultaneously without sacrificing performance.

Micron is now sampling its 1Gb mobile LPDDR2 solutions and expects to be production-ready in the second-half of 2009.


Previous
Next
SiS Announces ATSC HDTV SoC Chipset        All News        Sony to Offer Blu-ray/videogame Hybrid Discs For PS3
Garmin-ASUS Unveil nüvifone M20     Mobiles News      MediaTek Introduces its First GSM/GPRS Single-Chip

Get RSS feed Easy Print E-Mail this Message

Related News
Micron Posts Yearly Revenue Decline, But Forecast Profit
Micron Opens Fab 10 Singapore NAND Flash Memory Fabrication Facility
Micron Announces QuantX Branding For 3D XPoint Memory, Releases 3D NAND flash for Mobile Devices
Micron Introduces SLC NAND Flash for IoT and Automotive
Micron To Reduce Workforce Following Slow Third Quarter Results
Micron Showcases 3D NAND-based Ballistix TX3 And Crucial MX300 SSDs at Computex
Micron Expands Singapore NAND Fab
Micron Debuts 3D NAND 1100 and 2100 SSDs
Micron Unveils New NVMe PCIe SSDs, New Flash-storage Solutions For Open Source Data Centers
Micron Swings to Loss
Samsung To Start Mass-Producing 18nm DRAM
Micron Outlines Tts First 3D NAND Products

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .