Sunday, February 14, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Researchers Download "Game Of Thrones" In Just 1 Second!
Apple: Dr. Dre Starring In New TV Series; New iPhone, iPad Coming in March
Foxconn Seeks For Partner To Boost Bid For Sharp
Micron Outlines Tts First 3D NAND Products
AT&T To Start 5G Trials This Year
Uber Agrees to Settle Safety Lawsuits
Google To Expand Right-to-Be-Forgotten Removals Following Pressure From Europe
Apple And At&T Sued For Infringement of Touch Feedback Patents
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
How to burn a backup copy of The Frozen Throne
Help make DVDInfoPro better with dvdinfomantis!!!
Copied dvd's say blank in computer only
menu making
 Home > News > General Computing > Intel, ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Monday, November 24, 2008
Intel, Micron Move into Mass Production with 34nm NAND Flash


Intel and Micron today announced mass production of their jointly developed 34nm, 32 gigabit multi-level cell (MLC) NAND flash memory device.

Developed and manufactured by the companies? NAND flash joint venture, IM Flash Technologies (IMFT), the process technology is the most advanced process available on the market and enables the industry?s only monolithic 32 Gb NAND chip that fits into a standard 48-lead thin small-outline package (TSOP). The companies are ahead of schedule with 34nm NAND production, expecting their Lehi facility to have transitioned more than 50 percent of its capacity to 34nm by year?s end.

The 34nm, 32 Gb chips are manufactured on 300 mm wafers. Measuring just 172mm², less than the size of a thumbnail, the 34nm, 32 Gb chip will enable high-density solid-state storage in small form factor applications including digital cameras, personal music players and digital camcorders. Additionally, the chip will enable more cost-effective solid-state drives, increasing their current storage capacity.

The companies also plan to begin sampling lower density multi-level cell (MLC) and single-level cell (SLC) products using the 34nm process technology in early 2009.


Previous
Next
Spamer to Pay facebook $873.3 Million        All News        Plextor Announces New Lineup of Optical Drives with PlexUTILITIES Diagnostic Software
Spamer to Pay facebook $873.3 Million     General Computing News      Korean Scientists Claim Breakthrough in OLED screen Technology

Get RSS feed Easy Print E-Mail this Message

Related News
Micron Outlines Tts First 3D NAND Products
Chip Makers Differientate In terms Of Equipment Investments
Intel To Focus On Energy Comsumption On Future Chips
Micron Outlines GDDR5X Plans
Intel To Remove Overclocking Loophole In Skylake Processors
768 Gbit Micron 3D NAND Is Faster Than Samsung’s 256Gb V-NAND: ISSCC
New Skylake And Xeon Chips Power Latest Devices
Microsoft releases CNTK Deep Learning Toolkit
Intel, Tsinghua University and Montage Technology Collaborate to Bring Data Center Solutions to China
Intel Releases 6th Generation Intel Core vPro Processors
3D NAND Flash Memory Market is Heating Up
Intel Reports Full Year Revenue Despite Slow PC Sales

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .