Thursday, April 24, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Facebook Enjoys High First-quarter Revenue
Qualcomm Reports Less Than Expected 2Q Revenue
iPhone Sales Drive Apple's Record March Quarter Revenue
Travelling Through Time On Updated Google Maps
OnePlus One To Launch Next Month
LG Display Reports First Quarter Results
Toshiba Announces Canvio AeroMobile Wireless SSD
Global Chip Revenue Rises in 2013
Active Discussions
help questions structure DVDR
Made video, won't play back easily
Questions durability monitor LCD
Questions fungus CD/DVD Media, Some expert engineer in optical media can help me?
CD, DVD and Blu-ray burning for Android in development
IBM supercharges Power servers with graphics chips
Werner Vogels: four cloud computing trends for 2014
Video editing software.
 Home > News > General Computing > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, November 11, 2008
Samsung to Start 65nm PRAM Manufacturing in 2009


Samsung Electronics will begin mass production of 512MB PRAM (Phase change RAM) in the first half of the next year, in an effort to in order to maintain its leadership in the memory market.

The company said that it would begin the mass production of 65nm 512MB PRAM in the first half of the next year for the first time in the world.

PRAM, known as perfect RAM, is the next generation memory chip which features the advantages of NAND and NOR flash memories.

The S. Korean company, unveiled its plans to relase samples of 65nm 512MB PRAM chips and begin the mass production in its 200mm manufacturing line within this year.

"We obtained tens of thousand PRAM samples in the 90 nano processing line. In the end of this year, we will release out pilot products. Next year, we will begin the mass production to allow clients to use and check the performances," Samsung's executives said, as etnews.co.kr report. The company added that its current PRAM products work when its width is less than 10 nanometers, but the it also works even in 7 nanometers, according to the company's research. "We are sure that PRAM will be available as less than 20 nanometer ultra micro memory," Samsung added.

Phase-change Random Access Memory (PRAM) uses a material that turns crystalline when heated. The clrystalline bits represent the logical "1" in the binary system of computers, while amorphous areas (bits) represent logical "0"

PRAM is also more scalable than any other memory architecture being researched and features the fast processing speed of RAM for its operating functions combined with the non-volatile features of flash memory for storage.

A key advantage in PRAM is its extremely fast performance. Because PRAM can rewrite data without having to first erase data previously accumulated, it is effectively 30-times faster than conventional flash memory. PRAM is also expected to have at least 10-times the life span of flash memory.

PRAM is expected to be a highly competitive choice over NOR flash, since it requires fewer process steps to produce than those used in the manufacturing of NOR flash memory.

Adoption of PRAM is expected to be especially popular in the future designs of multi-function handsets and for other mobile applications, where faster speeds translate into immediately noticeable boosts in performance.

Samsung introduced pilot products of 256MB PRAM for the first time in the world in 2005.

Hynix, Samsung's competitor in the memory market, also plans to complete the development of 54nm 512MB chips in the end of the next year to begin the mass production. Numonyx will also release 45 nano products in the end of the next year.


Previous
Next
Fujitsu, Hitachi, Release Energy-Efficient 500 GB 2.5" HDD Models With Security Features        All News        Sun to Distribute Microsoft Live Search Toolbar as Part of Java Runtime Environment
Youtube to Offer Full-length MGM Shows and Films     General Computing News      Sun to Distribute Microsoft Live Search Toolbar as Part of Java Runtime Environment

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Opens Innovation Museum
Samsung Works With GLOBALFOUNDRIES On 14 nm FinFET Offering
Amazon Announces Kindle Service For Samsung Devices
Samsung Galaxy S5 Carries A Very High Bill of Materials
Researchers Hack Galaxy S5's Fingerprint Scanner
Samsung SDI Introduces Large Capacity, Curved Battery
Samsung To Hold 'Kapture The Moment' Event
Samsung Galaxy S5 and New Gear Devices Launch Globally
SAMSUNG Expands Its Zero Client Lineup with New Desktop Endpoint
Samsung Galaxy Note 4 Coming In September
Samsung Accelerates DDR4 Production
Samsung's Next Smartwatch to Go Solo

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .