Hynix Semiconductor announced today the launch of 2-Rank 8GB PC2-4200 RDIMM, featuring MetaRAM?s MetaSDRAM technology.
doubles the memory capacity of AMD Opteron-based and
Intel Xeon-based systems, while lowering power consumption by up
to 30% when compared to industry standard 8GB 4-Rank or 4GB
2-Rank modules, Hynix claims.
The MetaRam technology allows the use of mainstream lower cost
DRAM components in the manufacture of the next generation high
density DIMMs, without increasing the number of memory ranks or
the load on the CPU. The 8GB 2-Rank RDIMM is built with
mainstream 1Gb DDR2 SDRAMs instead of the significantly more
expensive 2Gb, thus lowering the cost of the module.
The MetaSDRAM chipset consists of flow controllers and an access
manager which sit between the memory controller and the DRAM. It
enables up to four times more mainstream DRAMs to be integrated
into the DIMM without the need for any system level hardware or
software changes. The chipset makes multiple DRAMs look like a
larger capacity DRAM to the memory controller resulting in high
capacity memory modules that circumvent the normal limitations of
the memory controller.
The HYMP31GP72CUP4-C6 8GB DDR2 RDIMM is available now in
production quantities. The 8GB DDR3 2-Rank RDIMM using the
MetaRam technology is under development and will be available in
production quantities in 2H?08.