Sunday, December 11, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Apple AirPods Will Miss Holiday Season
Japan Display To Receive ¥50 bil. Support From Government
Google Said to Bring Internet To Cubans
Super Mario Run Won't Play Offline
U.S. Confirms Samsung and LG Dumped Washers
Xiaomi Electric Vehicle Launch on Monday, Yeelight LED Ceiling Light Launched
Hon Hai, Sharp To Build Massive LCD TV Plant In China
U.S. To Review Cyber Attacks Beyond 2016 Election
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Thursday, February 07, 2008
Toshiba to Develop 16-Gigabit NAND Flash Memory with 43nm Process Technology


Toshiba today announced development of technology for a 16-gigabit (Gb) NAND flash memory chip fabricated with 43-nanometer (nm) process technology co-developed with SanDisk.

The technology of the new chip was reported on February 6, in Session 23.6 of the International Solid-State Circuits Conference (ISSCC) 2008 in San Francisco.

The new 16Gb products have a chip area of approximately 120 square millimeters, about 30 percent less than the same-density NAND flash memories jointly developed by Toshiba and SanDisk and fabricated with 56nm process technology. Memory cells are grouped and controlled in NAND strings of 64 cells aligned in parallel, double the number of 56nm devices, with a dummy word-line cell at either end to prevent program disturbance. This technology contributes to reduce the number of select gates and to improve memory area efficiency. Modification of the peripheral circuit design also contributes to reduced chip area: the addition of high voltage switches to the circuit reduces the number of control-gate driver circuits required to drive word lines, and ground buses are routed on the memory cell arrays.

Toshiba will start shipments of commercial samples of new 16Gb (2 gigabyte) single-chip, multi-level cell (MLC) NAND flash memories, the current mainstream density, from today and start mass production from March. The company intends to start mass production of 32Gb (4 gigabyte) NAND flash memories early in the third quarter of this year (July?September 2008). The new chips will be produced at Fab 4, the latest 300mm wafer fabrication facility at Toshiba's Yokkaichi Operations, in Mie prefecture, Japan.


Previous
Next
Infineon Introduces 65nm Single-Chip Family for Low-cost Phones        All News        Phase Change Technology to Challenge Flash Memory
Tech Giants to Promote Global Web Identity     General Computing News      Phase Change Technology to Challenge Flash Memory

Get RSS feed Easy Print E-Mail this Message

Related News
Toshiba Expands 3D Flash Memory Production Capacity In New Fabrication Facility at Yokkaichi
Toshiba Advances Deep Learning with Extremely Low Power Neuromorphic Processor
Toshiba's Voice Recognition Technology Can Distinguish Multiple Individual Speakers Without Training
Investors Sue Toshiba Over Accounting Scandal
Toshiba Starts Testing System For Future Self-driving Cars
Toshiba, Tohoku Electric and Iwatani Start Study of World?s Largest Hydrogen Energy System
Toshiba Introduces the Value-oriented OCZ TL100 SATA SSD Series
SanDisk Unveils 1TB Prototype SDXC Card
Toshiba Expands 24nm SLC Flash Family with 16Gb Offering
Toshiba Introduces the OCZ VX500 SATA SSD Series
Toshiba to Implement Eyefi Connected Features in Next FlashAir SD Cards
Toshiba Debuts Flashmatrix Technology

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .