Thursday, July 30, 2015
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Researchers Showcase Javascript-based Attack On a Computer's DRAM
Hackers Used Twitter hashtags To Extract Data From Compromised Networks
Facebook Unveils New Security Checkup Tool
Court of Appeals Rejects Google's Move To Overturn Microsoft's Patent Royalty Victory
Toshiba Expands Lineup of Phase Detection Auto-Focus-equipped CMOS Image Sensors for Smartphones
Sony Profit Rises Following Demand For Mobile Cameras
Facebook Profit Fell In 2Q
Galaxy S6 Sales Not Enough To Keep Samsung's Profit High
Active Discussions
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
How to burn a backup copy of The Frozen Throne
Help make DVDInfoPro better with dvdinfomantis!!!
Copied dvd's say blank in computer only
menu making
Optiarc AD-7260S review
 Home > News > General Computing > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Thursday, February 07, 2008
Toshiba to Develop 16-Gigabit NAND Flash Memory with 43nm Process Technology


Toshiba today announced development of technology for a 16-gigabit (Gb) NAND flash memory chip fabricated with 43-nanometer (nm) process technology co-developed with SanDisk.

The technology of the new chip was reported on February 6, in Session 23.6 of the International Solid-State Circuits Conference (ISSCC) 2008 in San Francisco.

The new 16Gb products have a chip area of approximately 120 square millimeters, about 30 percent less than the same-density NAND flash memories jointly developed by Toshiba and SanDisk and fabricated with 56nm process technology. Memory cells are grouped and controlled in NAND strings of 64 cells aligned in parallel, double the number of 56nm devices, with a dummy word-line cell at either end to prevent program disturbance. This technology contributes to reduce the number of select gates and to improve memory area efficiency. Modification of the peripheral circuit design also contributes to reduced chip area: the addition of high voltage switches to the circuit reduces the number of control-gate driver circuits required to drive word lines, and ground buses are routed on the memory cell arrays.

Toshiba will start shipments of commercial samples of new 16Gb (2 gigabyte) single-chip, multi-level cell (MLC) NAND flash memories, the current mainstream density, from today and start mass production from March. The company intends to start mass production of 32Gb (4 gigabyte) NAND flash memories early in the third quarter of this year (July?September 2008). The new chips will be produced at Fab 4, the latest 300mm wafer fabrication facility at Toshiba's Yokkaichi Operations, in Mie prefecture, Japan.


Previous
Next
Infineon Introduces 65nm Single-Chip Family for Low-cost Phones        All News        Phase Change Technology to Challenge Flash Memory
Tech Giants to Promote Global Web Identity     General Computing News      Phase Change Technology to Challenge Flash Memory

Get RSS feed Easy Print E-Mail this Message

Related News
Toshiba Expands Line-up of ARM Cortex -M-based Microcontrollers
Toshiba CEO Resigns Following Accounting Scandal
Toshiba Inflated Profits
SanDisk Releases New Wireless Flash Drive
SanDisk Releases High Capacity iNAND 7232 Storage Solution
Toshiba Moves To New Process Technologies for Microcontrollers and Wireless Communication ICs
Toshiba Demonstrates New Technology For 3D Hard Disks
Toshiba Announces 6TB Enterprise Cloud HDD
Toshiba Portege WT20 Business Tablet Now Available
Toshiba Introduces New Satellite Series Laptops, Fusion And Radius 2-In-1 PCs
Toshiba Develops Chip Authentication Technology Using Transistor Noise
Toshiba To License Its TV Business in Europe to Compal

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2015 - All rights reserved -
Privacy policy - Contact Us .