Saturday, June 23, 2018
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
FCC to Seek for Flexible Use of C-band and 6GHz Airwaves
AMD Presents Modular Routing Design for Chiplet-based Systems
Software Business Continues to Work For BlackBerry
Apple Turns to the U.S. Patent Office to Invalidate Qualcomm Patents
Samsung Patents Bezel-less, Notch-free Smartphone Design
China is Home to Most Smartphone Vendors
VidCon 2018: Youtube Announces Memberships, Merchandise as Alternatives to Ads
Chatting With Google Assistant Gets More Natural
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Thursday, February 07, 2008
Toshiba to Develop 16-Gigabit NAND Flash Memory with 43nm Process Technology


Toshiba today announced development of technology for a 16-gigabit (Gb) NAND flash memory chip fabricated with 43-nanometer (nm) process technology co-developed with SanDisk.

The technology of the new chip was reported on February 6, in Session 23.6 of the International Solid-State Circuits Conference (ISSCC) 2008 in San Francisco.

The new 16Gb products have a chip area of approximately 120 square millimeters, about 30 percent less than the same-density NAND flash memories jointly developed by Toshiba and SanDisk and fabricated with 56nm process technology. Memory cells are grouped and controlled in NAND strings of 64 cells aligned in parallel, double the number of 56nm devices, with a dummy word-line cell at either end to prevent program disturbance. This technology contributes to reduce the number of select gates and to improve memory area efficiency. Modification of the peripheral circuit design also contributes to reduced chip area: the addition of high voltage switches to the circuit reduces the number of control-gate driver circuits required to drive word lines, and ground buses are routed on the memory cell arrays.

Toshiba will start shipments of commercial samples of new 16Gb (2 gigabyte) single-chip, multi-level cell (MLC) NAND flash memories, the current mainstream density, from today and start mass production from March. The company intends to start mass production of 32Gb (4 gigabyte) NAND flash memories early in the third quarter of this year (July?September 2008). The new chips will be produced at Fab 4, the latest 300mm wafer fabrication facility at Toshiba's Yokkaichi Operations, in Mie prefecture, Japan.


Previous
Next
Infineon Introduces 65nm Single-Chip Family for Low-cost Phones        All News        Phase Change Technology to Challenge Flash Memory
Tech Giants to Promote Global Web Identity     General Computing News      Phase Change Technology to Challenge Flash Memory

Get RSS feed Easy Print E-Mail this Message

Related News
Toshiba Delivers RM5 vSAS Series SSDs Targeting SATA Applications
Value-Optimized Toshiba RC100 NVMe SSDs Now Available
Sharp to buy Toshiba's PC Business
Sharp close to Buying Toshiba's PC Business
Bain Capital to Support Toshiba Memory's Future Acquisitions
Toshiba Completes $18bn Sale of Flash Memory Unit
Toshiba Introduces New XS700 Series of Portable SSDs
Toshiba's Twin-Field Quantum Key Distribution Extends the Limit of Intercity Secure Communications
Toshiba Confirms Approval of $18 billion Chip Unit Sale by China
China Finally Approves Toshiba's Plan to Sell Its Memory Chip Unit: report
Toshiba Weighs Memory Chip Unit Options
Toshiba Releases New Surveillance, Video Streaming Laptop and Desktop Hard Drives

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2018 - All rights reserved -
Privacy policy - Contact Us .