Sunday, April 20, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Sharp Improves LCD Viewing Angle With New Optical Film
Ex-Apple CEO To Sell Mobiles In India
HTC Hired Ex-Samsung Marketing Officer
Xbox One Wolrdwide Sales Cross 5 million
Samsung Works With GLOBALFOUNDRIES On 14 nm FinFET Offering
Facebook To Find Nearby Friends
Console Sales Lift AMD's First Quarter Results
LG Expands 'Second Screen' TV Ecosystem With Open-Source SDK
Active Discussions
help questions structure DVDR
Made video, won't play back easily
Questions durability monitor LCD
Questions fungus CD/DVD Media, Some expert engineer in optical media can help me?
CD, DVD and Blu-ray burning for Android in development
IBM supercharges Power servers with graphics chips
Werner Vogels: four cloud computing trends for 2014
Video editing software.
 Home > News > General Computing > Phase C...
Last 7 Days News : SU MO TU WE TH FR SA All News

Thursday, February 07, 2008
Phase Change Technology to Challenge Flash Memory


Intel and STMicroelectronics reached a key industry milestone today as they began shipping prototype samples of a future product using a new memory technology called Phase Change Memory (PCM).

The prototypes are the first functional silicon to be delivered to customers for evaluation, bringing the technology one step closer to adoption.

The memory device, codenamed "Alverstone" uses PCM, a new memory technology providing very fast read and write speeds at lower power than conventional flash, and allows for bit alterability normally seen in RAM.

"This is the most significant non-volatile memory advancement in 40 years," said Ed Doller, chief technology officer-designate of Numonyx, the new name for the pending STMicroelectronics and Intel flash memory company. "There have been plenty of attempts to find and develop new non-volatile memory technologies, yet of all the concepts, PCM provides the most compelling solution ? and Intel and STMicroelectronics are delivering PCM into the hands of customers today. This is an important milestone for the industry and for our companies."

In related news, Intel and STMicroelectronics technologists presented a research paper this week at the International Solid States Circuits Conference (ISSCC) describing yet another breakthrough in PCM technology. Together, the companies created the world?s first demonstrable high-density, multi-level cell (MLC) large memory device using PCM technology. The move from single bit per cell to MLC also brings significantly higher density at a lower cost per Mbyte making the combination of MLC and PCM a powerful development.

In 2003, Intel and STMicroelectronics formed a joint development program (JDP) to focus on Phase Change Memory development. Previously the JDP demonstrated 8Mb memory arrays on 180nm at the 2004 VLSI conference and first disclosed the Alverstone 90nm 128Mbit memory device at the 2006 VLSI Symposium. Alverstone and future JDP products will become part of Numonyx, a new independent semiconductor company created through an agreement between STMicroelectronics, Intel and Francisco Partners signed in May 2007. The new company's strategic focus will be on supplying complete memory solutions for a variety of consumer and industrial devices, including cellular phones, MP3 players, digital cameras, computers and other high-tech equipment. The companies are scheduled to close the transaction in the first quarter of 2008.

In 2007, the combined memory market for DRAM, flash, and other memory products such as EEPROM was US$61 billion, according to the industry research firm Web-Feet Research, Inc. Memory technology cost declines have traditionally been driven at the rate of "Moore?s Law," where density doubles every 18 months with each lithography shrink. As RAM and flash technologies run into scaling limitations over the next decade, PCM costs will decline at a faster rate. The advent of multi-level-cell PCM will further accelerate the cost per bit crossover of PCM technology relative to today's technologies. Finally, by combining the bit-alterability of DRAM, the non-volatility of flash, the fast reads of NOR and the fast writes of NAND, PCM has the ability to address the entire memory market and be a key driver for future growth over the next decade.

Alverstone is a 128Mb device built on 90nm and is intended to allow memory customers to evaluate PCM features, allowing cellular and embedded customers to learn more about PCM and how it can be incorporated into their future system designs.


Previous
Next
Toshiba to Develop 16-Gigabit NAND Flash Memory with 43nm Process Technology        All News        How to Copy a Blu-ray Disc to the Hard Drive
Toshiba to Develop 16-Gigabit NAND Flash Memory with 43nm Process Technology     General Computing News      Microsoft Showcases Web Advertising Prototypes

Get RSS feed Easy Print E-Mail this Message

Related News
Intel's Quarterly Net Better Than Expected
New Intel Haswell Processors Released
3M, SGI and Intel Showcase New Cooling Technology for Data Centers
Intel Cuts 1,500 Jobs In Costa Rica
Intel Adjusts Its Financial Reporting
Intel Outlines New USB 3.1 Type-C Connectors, Braswell Chip at IDF 2014
Intel Aims At China With New LTE Cat 6 Solution, Mobile SoC
Intel Makes Changes To Edison Chip For Wearables
Intel Invests In Big Data Analytics Company Cloudera
Altera and Intel To Make Multi-Die Devices
Intel Buys Basis, A Fitness Band Maker
Intel Previews New Desktop Processors

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .