Sunday, January 25, 2015
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
NVIDIA Comments On GeForce GTX 970 Memory Allocation Reports
Google Comments On Lack Of Security Patches On Older Android Phones
Sony is Offering Old Games To Settle The 2011 PlayStation Network Breach
Sony Postpones Earnings Announcement
January Windows 10 Build Released Through The Windows Insider Program
Flexible Computers Are Stil Away From Reality
China Denies Microsoft Outlook Hacking Allegations
A Look at Microsoft's New Spartan Browser
Active Discussions
HELP!!!
full screen wide screen
UDF errors
Hi
The Simplest Way to Download KODAK HERO 7.1 Driver
About the restriction problem of chapter quantity in DVD
Booktype utilities for LiteON and OEM DVD Recorders
downgrade a nero vision 5 project to nero vision 2
 Home > News > Consumer Electronics > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, December 12, 2007
Toshiba Develops Basic Technology for Production of 100 Gbit Flash Memory


Toshiba today announced that it has developed a new double tunneling layer technology applicable to future 10nm generation flash memories.

This elemental technology opens the way for memory devices with densities of over 100 gigabits in the 10nm generation, which lies four generations ahead. The technology was today announced at the IEDM (International Electron Devices Meeting) held at Washington D.C., U.S.A.

Toshiba developed a tunnel layer, which controls in and out of electron, in the SONOS (Silicon Oxide Nitride Oxide Semiconductor) type device structure, a memory structure that holds electrons in the nitride layer in the gate insulator. The new structure sandwiches a 1.2 nm silicon nanocrystals layer between the 1nm thickness oxide films, achieving long-time data retention and high speed writing and data deletion at the same time, using the natural characteristic that resistance changes with changes in gate voltage. As the new tunnel layers are thinner than early version SONOS element tunnel layers, it is easier to migrate to advanced devices with finer lithography.

Toshiba also increased the saved electrons amount by changing the nitride film from Si3N4 to Si9N10, a material that contains more silicon, and optimized such aspects of the element structure as channel impurity concentration. The prototype has realized and maintained equivalent to over 10 years performance.

Toshiba is investigating various technologies for future advanced memories, including 3D structures, and believes that realizing operation in the 10nm generation with its new double tunneling layer technology is a step forward to future practical devices.


Previous
Next
Universal to Provide TV Content for SanDisk's Web-Based Service Fanfare        All News        Fujitsu Develops Multi-Layer Interconnect Technology for 32nm Logic LSI Devices
Sharp Files New LCD Patent Infringement Lawsuit Against Samsung     Consumer Electronics News      Fujitsu Develops Multi-Layer Interconnect Technology for 32nm Logic LSI Devices

Get RSS feed Easy Print E-Mail this Message

Related News
Toshiba Reorganization to Strengthen IoT-Related Business
Toshiba Develops Cloud System for Instantaneous Remote Control of One Million Devices
Toshiba Launches NFC Built-in SDHC Memory Card
Toshiba Launches 3TB 2.5-inch HDD, Showcases First PCIe Single Package SSD
Toshiba Adds New Models To Click and Encore Families
Toshiba Develops Glasses-Free UHD 2D-3D Switching Display
IHI and Toshiba to Demo Ocean Current Power Generation System
Toshiba and SK Hynix Reach Settlement in Lawsuit Ahead Of CES
Toshiba Announces 6TB Enterprise Capacity HDD Models
Toshiba's New Canvio AeroCast Wireless HDD Lets You Play Digital Content On Your TV
Toshiba Expands Line-up of Enterprise SSDs
Toshiba Launches ARM-Based Application Processors with Sound, Image Data-Mining and Security Functions

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2015 - All rights reserved -
Privacy policy - Contact Us .