Friday, July 21, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Intel Introduces Movidius Neural Compute Stick
TSMC InFO packaging Enters Second Generation
Samsung Display to Provide OLED panels to Xiaomi
Qualcomm Profit Forecast Disappoints Amid Apple Legal Battles
Google Embrace News Feed on Mobile With Personalized 'Feed'
iPhone Manufacturers Accuse Qualcomm of Antitrust Violations
Toshiba Resumed Blocking Western Digital Access to JV Database
Samsung kicks off English-language Bixby Voice Service
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > Consumer Electronics > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, September 04, 2007
Toshiba and SanDisk Inaugurate New 300mm Wafer Fab for NAND Flash Memory


Toshiba and SanDisk today celebrated with a traditional ceremony and reception the opening of Fab 4, the latest 300mm wafer fabrication facility at Toshiba's Yokkaichi Operations, in Mie Prefecture, Japan.

NAND flash memory is used in a wide range of digital applications, including digital media players, mobile phones, PCs and memory cards.

Toshiba started construction of Fab 4 in August 2006. Fab 4 is expected to start mass production in December 2007 and reach a production capacity of 80,000 wafers a month in the second half of CY2008. The fab still has space to expand capacity, and further investment could take output to 210,000 wafers per month, in response to the projected increase in future market demand. Fab 4 will employ 56-nanometer (nm) process technology at start-up, and plans call for a gradual transition to 43 nm technology, starting from March 2008.

"Toshiba and our partner SanDisk are delighted to celebrate the construction of this new facility," said Mr. Shozo Saito, Corporate Senior Vice President of Toshiba Corporation and President & CEO of Toshiba's Semiconductor Company. "Fab 4 will feature world-class manufacturing capabilities, both in scale and productivity. It will support us in reinforcing our leadership in the fast growing global market for higher density NAND flash memories, and provide a powerful engine of growth for both companies."



Dr. Eli Harari, Chief Executive Officer and Chairman of SanDisk Corporation, said, "Fab 4 is testimony to the success of the great partnership and long-term commitment between Toshiba and SanDisk. The enormous size and technology scope of Fab 4 reflect our confidence and optimism for the future, and we believe will enable us to competitively meet the growing demand for flash storage from our global customers in the years ahead."

Fab 4 is designed to minimize any impact on operations from natural disasters. The building was constructed using the latest earthquake-absorbing structure, which is designed to dampen temblor force by up to two-thirds, and deploys multiple power compensation (MPC) that is triggered instantaneously by any sudden, momentary loss of power supply, from a lightning strike, for example.

Toshiba funded construction of the Fab 4 building, and Flash Alliance, Ltd., a Toshiba-SanDisk venture established in July 2006, 50.1% owned by Toshiba and 49.9% by SanDisk, is funding the advanced manufacturing equipment now being installed in the fab.


Previous
Next
Hackers to Offer iPhone Free of AT&T        All News        Mitsubishi Chemicals Release DVD-R Media For High Quality Sound Recordings
Apple to Announce New iPods     Consumer Electronics News      Gadgets at IFA

Get RSS feed Easy Print E-Mail this Message

Related News
Toshiba Resumed Blocking Western Digital Access to JV Database
Court Says Western Digital Should Have Access Toshiba's Technical Databases
Toshiba in Talks with Western Digital, Foxconn Over Memory Unit Sale
Toshiba Develops First 3D Flash Memory with TSV Technology
Western Digital Responds to Toshiba's Actions
Toshiba Delays Chip Unit Deal, Sues Western Digital
Toshiba Announces 96-Layer 3D Flash Memory and 64-Layer QLC 3D Flash Memory
Western Digital Announces First 96-Layer 3D NAND Technology
Western Digital Resubmits Bid for Toshiba Chip Unit
Toshiba Chip-Unit Final Agreement Said to be Delayed, WD Opposes Participation of SK Hynix
Toshiba Open to Further Talks With Western Digital About Chip Unit Sale
Japan-led Consortium Wins Toshiba Memory Bidding

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .