Sunday, October 04, 2015
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Microsoft Buys Havok
Google Officially Becomes Alphabet
Microsoft Works On A Laptop Battery System That Adapts To Your Habits To Last Longer
Motorola Outlines Android Marshmallow Update Plans
AMD FirePro Graphics Powers New Dell Precision Mobile Workstations
Globalfoundries Said To Move To 10nm Development On Its Own
Nvidia Launches New Maxwell-based Quadro graphics For Mobile workstations
Microsoft Expands Licensing Agreements With Asus, I-O Data
Active Discussions
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
How to burn a backup copy of The Frozen Throne
Help make DVDInfoPro better with dvdinfomantis!!!
Copied dvd's say blank in computer only
menu making
Optiarc AD-7260S review
 Home > News > Mobiles > IBM and...
Last 7 Days News : SU MO TU WE TH FR SA All News

Monday, August 20, 2007
IBM and TDK Launch Joint Research & Development Project for MRAM

IBM and TDK today announced a joint research and development program to develop high capacity MRAM (Magnetic Random Access Memory) technology utilizing the spin momentum transfer effect.

The companies believe that harnessing the spin momentum transfer effect will allow a much more compact memory cell than is possible with present approaches.

The companies will leverage their respective expertise in areas of research for new memory technology and magnetic device development to create a high density, high capacity MRAM integrated circuit which can be used as standalone memory or embedded into other IC solutions.

"This collaborative initiative reinforces IBM's commitment to explore new phenomena for memory applications," said Dr. T.C. Chen, vice president, Science and Technology, IBM Research. "The project will focus on creating and demonstrating advanced magnetic materials in demanding memory chip designs."

"This joint research and development will broaden the application of magnetic materials which has been TDK's core technology since 1935," said Mr. Minoru Takahashi, CTO, TDK Corporation.

The research work will be conducted at IBM's TJ Watson Research Center in Yorktown Heights, NY, IBM's Almaden Research Center in San Jose, CA., IBM's ASIC Design Center in Burlington, VT and TDK's subsidiary R&D Center in Milpitas, CA.

MRAM offers significant advantages over competing memory technologies including low power usage, high speed, unlimited endurance (read and write cycles), and inherent non-volatility (retains data without the need for continued power). Market adoption of MRAM has been limited by the inability to cost effectively increase capacity. Spin momentum transfer technology enables MRAM to significantly reduce cell size and thereby increase capacity cost-effectively while maintaining the low power and non-volatility advantages, potentially making MRAM a preferred solution for memory applications in the automotive, cell phone, handheld computing, and industrial controls.

Microsoft Cuts Xbox 360 Prices in Europe        All News        Canon to offer new SLR Cameras for Amateurs
Toshiba to Launch First 32GB Flash Memory Card in January     Mobiles News      Verizon BlackBerry 8130

Get RSS feed Easy Print E-Mail this Message

Related News
Research Breakthrough Paves Way for Post-Silicon Future
IBM and ARM Collaborate to Accelerate Delivery of Internet of Things
IBM Unveils Linux Mainframe System
Watson to Gain Ability to See with Acquisition of Merge Healthcare
IBM Acquires Compose to Expand Cloud Data Services
IBM Revenue Declines
IBM Develops 7nm Processor
IBM and Box Partner to Transform Work in the Cloud
IBM Maintains Top Position In The List Of U.S. Patents
IBM Buys Blue Box to Accelerate Open Hybrid Clouds
IBM Scientists Achieve Critical Steps to Building First Quantum Computer
IBM Revenue Falls In Q1

Most Popular News
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2015 - All rights reserved -
Privacy policy - Contact Us .