Friday, April 18, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
HTC Hired Ex-Samsung Marketing Officer
Xbox One Wolrdwide Sales Cross 5 million
Samsung Works With GLOBALFOUNDRIES On 14 nm FinFET Offering
Facebook To Find Nearby Friends
Console Sales Lift AMD's First Quarter Results
LG Expands 'Second Screen' TV Ecosystem With Open-Source SDK
Amazon Announces Kindle Service For Samsung Devices
Nokia Halts Sales Of Lumia 2520 Tablet
Active Discussions
help questions structure DVDR
Made video, won't play back easily
Questions durability monitor LCD
Questions fungus CD/DVD Media, Some expert engineer in optical media can help me?
CD, DVD and Blu-ray burning for Android in development
IBM supercharges Power servers with graphics chips
Werner Vogels: four cloud computing trends for 2014
Video editing software.
 Home > News > Mobiles > IBM and...
Last 7 Days News : SU MO TU WE TH FR SA All News

Monday, August 20, 2007
IBM and TDK Launch Joint Research & Development Project for MRAM


IBM and TDK today announced a joint research and development program to develop high capacity MRAM (Magnetic Random Access Memory) technology utilizing the spin momentum transfer effect.

The companies believe that harnessing the spin momentum transfer effect will allow a much more compact memory cell than is possible with present approaches.

The companies will leverage their respective expertise in areas of research for new memory technology and magnetic device development to create a high density, high capacity MRAM integrated circuit which can be used as standalone memory or embedded into other IC solutions.

"This collaborative initiative reinforces IBM's commitment to explore new phenomena for memory applications," said Dr. T.C. Chen, vice president, Science and Technology, IBM Research. "The project will focus on creating and demonstrating advanced magnetic materials in demanding memory chip designs."

"This joint research and development will broaden the application of magnetic materials which has been TDK's core technology since 1935," said Mr. Minoru Takahashi, CTO, TDK Corporation.

The research work will be conducted at IBM's TJ Watson Research Center in Yorktown Heights, NY, IBM's Almaden Research Center in San Jose, CA., IBM's ASIC Design Center in Burlington, VT and TDK's subsidiary R&D Center in Milpitas, CA.

MRAM offers significant advantages over competing memory technologies including low power usage, high speed, unlimited endurance (read and write cycles), and inherent non-volatility (retains data without the need for continued power). Market adoption of MRAM has been limited by the inability to cost effectively increase capacity. Spin momentum transfer technology enables MRAM to significantly reduce cell size and thereby increase capacity cost-effectively while maintaining the low power and non-volatility advantages, potentially making MRAM a preferred solution for memory applications in the automotive, cell phone, handheld computing, and industrial controls.


Previous
Next
Microsoft Cuts Xbox 360 Prices in Europe        All News        Canon to offer new SLR Cameras for Amateurs
Toshiba to Launch First 32GB Flash Memory Card in January     Mobiles News      Verizon BlackBerry 8130

Get RSS feed Easy Print E-Mail this Message

Related News
Globalfoundries To Buy IBM chip-making Business: report
IBM To Help Organizations Tackle Fraud
IBM Watson To Help Fight Cancer
IBM Says It Has Not Provided Any User Data To Government
Lenovo Says China Strike Remains An IBM Matter
MWC: IBM Wants Mobile Apps on Watson
AT&T And IBM Join Forces On The Internet of Things
Scientists Set New Speed Record for Big Data
Samsung Joins IBM In OpenPower Alliance
IBM Considers Selling Its Semiconductor Business: reports
IBM Brings Watson to Africa
Lenovo Buys IBM's x86 Server Business

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .