Tuesday, July 29, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Microsoft Releases The Sharks Cove, A Raspberry Pi Alternative
EA Access for Xbox One Now Available
NVIDIA Rolls Out the GeForce 340.52 WHQL Driver
BlackBerry Strengthens Its Mobile Security Portfolio With The Acquisition of Secusmart
IBM, ACS And AT&T Claim Breakthrough In Elastic Cloud-to Cloud Networking
HP Says Internet of Things Devices Are Vulnerable to Attack
China Starts Anti-monopoly Investigation On Microsoft
Apple's MacBook Pros Now Come With Faster processors And More Memory
Active Discussions
help questions structure DVDR
Made video, won't play back easily
Questions durability monitor LCD
Questions fungus CD/DVD Media, Some expert engineer in optical media can help me?
CD, DVD and Blu-ray burning for Android in development
IBM supercharges Power servers with graphics chips
Werner Vogels: four cloud computing trends for 2014
Video editing software.
 Home > News > Consumer Electronics > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, June 12, 2007
Toshiba Develops New NAND Flash Technology


Toshiba today announced a new three dimensional memory cell array structure that enhances cell density and data capacity without relying on advances in process technology, and with minimal increase in the chip die size.

Toshiba announced its new development at the VLSI symposium on June 12.

In the new structure, pillars of stacked memory elements pass vertically through multi-stacked layers of electrode material and utilize shared peripheral circuits. The new design is a potential candidate technology for meeting future demand for higher density NAND flash memory.

Typically, advances in memory density reflect advances in process technology. Toshiba's new approach is based on innovations in the stacking process. Existing memory stacking technologies simply stack two-dimensional memory array on top of another, repeating the same set of processes. While this achieves increased memory cell density, it makes the manufacturing process longer and more complex. The new array does increase memory cell density, is easier to fabricate, and does not produce much increase in chip area, as peripheral circuits are shared by several silicon pillars.



Toshiba said that it would further develop this technology to the level where it wouold be secure and reliabile.


Previous
Next
Nokia's Wireless Technology to Be New Bluetooth Standard        All News        Intel Core 2 Extreme Overclocked at 5 GHz
Epson and Philips Release Reference Design for SVGA Projectors     Consumer Electronics News      Mitsubishi Announces, 640 nm 150 mW CW Laser Diode

Get RSS feed Easy Print E-Mail this Message

Related News
Toshiba to Release Wearable Biological Sensor
Samsung Maintains Its Global NAND Flash Leadership
Toshiba Introduces Storage Place Solution
Toshiba Brings Suit Against Powerchip for NAND Flash Memory Patent Infringement
NAND Flash Supplier Revenue Falls in First Quarter: TrendForce
Samsung Starts Mass Producing 32-Layer 3D V-NAND Flash Memory, Its 2nd Generation V-NAND Offering
Toshiba Debuts the Satellite Radius Multimode Laptop, New Detachable Notebooks And Windows 8.1 Tablets
Toshiba Announces 5TB, 7,200 RPM Enterprise HDD
SanDisk and Toshiba License Memory Technology IP
Toshiba to Start Vegetable (!) Production at New Factory
Toshiba, SanDisk To Challenge Samsung With Mass Production Of '3D' Memory
Toshiba Launches High Capacity Hard Disk Drives for Surveillance Applications

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .