Tuesday, June 19, 2018
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Western Digital Adds 12TB Western Digital Purple Drive to Surveillance Portfolio
Toshiba Delivers RM5 vSAS Series SSDs Targeting SATA Applications
Noctua launches CPU Coolers for LGA3647 Intel Xeon Platforms
Google to Bring Support for Android Messages to Desktop Browser
Tesla's Elon Musk Accuses Worker of Sabotage
Amazon Alexa Will be the Room Service in Marriott Hotels
Nvidia Uses AI to Produce High-quality, 240fps Slow-motion Video From 30fps Source
Panasonic Image Sensor Detects Objects 250 m Ahead at Night with Poor Visibility
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Monday, April 23, 2007
Samsung Develops New Stacking Process for DRAM


Samsung today announced that it has developed the first all-DRAM stacked memory package using 'through silicon via' (TSV) technology, which would result in memory packages that are faster, smaller and consume less power.

The new wafer-level-processed stacked package (WSP) consists of four 512 megabit (Mb) DDR2 (second generation, double data rate) DRAM (dynamic random access memory) chips that offer a combined 2 gigabits (Gb) of high density memory. Using the TSV-processed 2Gb DRAMs, Samsung can create a 4 GB (gigabyte) DIMM (dual in-line memory module) based on WSP technology for the first time. Samsung claims that its proprietary WSP technology not only reduces the overall package size, but also permits the chips to operate faster and use less power.

"The performance advancements achieved by our WSP technology can be utilized in many diverse combinations of semiconductor packaging, such as system-in-package solutions that combine logic with memory," said Tae-Gyeong Chung, vice president, Interconnect Technology Development Team, Memory Division, Samsung Electronics.

In today?s MCPs, memory chips are connected by wire bonding, requiring vertical spacing between dies that is tens of microns deep. That wire bonding process also requires horizontal spacing on the package board hundreds of microns wide for the die-connecting wires. By contrast, Samsung?s WSP technology forms laser-cut micron-sized holes that penetrate the silicon vertically to connect the memory circuits directly with a copper (Cu) filling, eliminating the need for gaps of extra space and wires protruding beyond the sides of the dies. These advantages permit Samsung?s WSP to offer a smaller footprint and thinner package.

Inside the new WSP, the TSV is housed within an aluminum (Al) pad to escape the performance-slow-down effect caused by the redistribution layer. Due to the complexity of DRAM stacking, this represented a much more difficult engineering feat than that accomplished with the first WSP, announced last year involving NAND flash dies.

There has been considerable concern that MCPs with high-speed memory chips with speed of 1.6Gb/ps next generation DRAM, would suffer from performance limitations when connected using current technologies. Samsung said that its WSP technology resolved these concerns.

In addition, as the back side of the wafer is ground away to make a thinner stack of multiple dies, the wafer has had a tendency to curve, creating physical distortion in the die. To overcome this additional critical concern in designing low-profile, high-density MCPs containing DRAM circuitry, Samsung?s wafer-thinning technology, announced last year, has been applied to improve the thin-die-cutting process.


Previous
Next
AMD Unveils New AMD Opteron Processors        All News        DaTARIUS At Mediatech Long Beach
AMD Unveils New AMD Opteron Processors     PC Parts News      Toshiba to Make 43-nm Flash Chips in '07/08

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Starts Researching EUV For DRAM: report
Samsung Lost FinFET Patent Case, Ordered to Pay $400 Million
New Samsung Chromebook Plus V2 Gets New Processors and Cameras
Samsung Launches Fund to Invest in AI Startups
Analysts Talks About Samsung's Upcoming Foldable Galaxy Smartphone
Samsung Begins Production of 16Gb, 64GB DDR4 RDIMM For Servers
Samsung and LG Eye Expansions into the Car Display Market
New Galaxy J3 and J7 Provide Features at an Affordable Price
Samsung Launches the MicroLED 'The Wall' Display at InfoComm 2018
Samsung's MicroLED TVs Coming in Q3
Samsung Introduces Faster, 10nm-Class 32GB DDR4 SoDIMMs For Gaming Laptops
Smartphone Sales Returned to Growth in First Quarter, Samsung Maintains No.1 Position

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2018 - All rights reserved -
Privacy policy - Contact Us .