Monday, April 21, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Sharp Improves LCD Viewing Angle With New Optical Film
Ex-Apple CEO To Sell Mobiles In India
HTC Hired Ex-Samsung Marketing Officer
Xbox One Wolrdwide Sales Cross 5 million
Samsung Works With GLOBALFOUNDRIES On 14 nm FinFET Offering
Facebook To Find Nearby Friends
Console Sales Lift AMD's First Quarter Results
LG Expands 'Second Screen' TV Ecosystem With Open-Source SDK
Active Discussions
help questions structure DVDR
Made video, won't play back easily
Questions durability monitor LCD
Questions fungus CD/DVD Media, Some expert engineer in optical media can help me?
CD, DVD and Blu-ray burning for Android in development
IBM supercharges Power servers with graphics chips
Werner Vogels: four cloud computing trends for 2014
Video editing software.
 Home > News > PC Parts > Intel t...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, April 18, 2007
Intel to Start Volume Production of PRAM Memory


Intel has demonstrasted a prototype Phase-change Random Access Memory (PRAM) memory chip at IDF Spring 2007 in Beijing, China, claiming that it would start mass-production of it at second half of 2007.

At the keynote speech, Intel's CTO Justin Rattner said that Intel considered replacing NOR flash memory with PRAM first, aiming at replacing DRAM in the future.

Code-named Alverston, the chip is a phase-change memory device. Intel demonstrated a 128-bit sample of the chip at IDF.

Phase-change Random Access Memory uses a material that turns crystalline when heated. The clrystalline bits represent the logical "1" in the binary system of computers, while amorphous areas (bits) represent logical "0"

PRAM is claimed to be scalable than any other memory architecture being researched, featuring the fast processing speed of RAM for its operating functions combined with the non-volatile features of flash memory for storage.

A key advantage in PRAM is its fast performance. Because PRAM can rewrite data without having to first erase data previously accumulated, it is 30-times faster than conventional flash memory. PRAM is also expected to have at least 10-times the life span of flash memory. Moreover, it requires 20 percent fewer process steps to produce than those used in the manufacturing of NOR flash memory.

The phase-change memory concept has been discussed for years now. Intel and Samsung now expect that it will become a non-volatile memory successor to flash memory. Samsung unveiled a 512M-Megabit (Mb) device at its sixth annual press conference in Seoul last September.


Previous
Next
Penryn 3.33GHz Quad-Core Benchmarks Released        All News        HD DVD Claims Sales Milestone
Penryn 3.33GHz Quad-Core Benchmarks Released     PC Parts News      Fujitsu Starts Volume Production of 2 Mbit FRAM Chips

Get RSS feed Easy Print E-Mail this Message

Related News
Intel's Quarterly Net Better Than Expected
New Intel Haswell Processors Released
3M, SGI and Intel Showcase New Cooling Technology for Data Centers
Intel Cuts 1,500 Jobs In Costa Rica
Intel Adjusts Its Financial Reporting
Intel Outlines New USB 3.1 Type-C Connectors, Braswell Chip at IDF 2014
Intel Aims At China With New LTE Cat 6 Solution, Mobile SoC
Intel Makes Changes To Edison Chip For Wearables
Intel Invests In Big Data Analytics Company Cloudera
Altera and Intel To Make Multi-Die Devices
Intel Buys Basis, A Fitness Band Maker
Intel Previews New Desktop Processors

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .