Friday, August 22, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Intel Highlights Its Wireless Computing Plans
Ouya Parners With Xiaomi On Games
Sony Offers New Smart Tennis Sensor
Microsoft to Announce Windows 9 on September Event: report
Acer Unveils New Chromebox CXI and Chromebook 11
Fraunhofer To Showcase The Future Of TV at IBC
Intel, Chunghwa Telecom Team up on Internet of Things
Sharp Launches 12-Mpixel CMOS Sensor for 4k Video
Active Discussions
help questions structure DVDR
Made video, won't play back easily
Questions durability monitor LCD
Questions fungus CD/DVD Media, Some expert engineer in optical media can help me?
CD, DVD and Blu-ray burning for Android in development
IBM supercharges Power servers with graphics chips
Werner Vogels: four cloud computing trends for 2014
Video editing software.
 Home > News > PC Parts > Intel t...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, April 18, 2007
Intel to Start Volume Production of PRAM Memory


Intel has demonstrasted a prototype Phase-change Random Access Memory (PRAM) memory chip at IDF Spring 2007 in Beijing, China, claiming that it would start mass-production of it at second half of 2007.

At the keynote speech, Intel's CTO Justin Rattner said that Intel considered replacing NOR flash memory with PRAM first, aiming at replacing DRAM in the future.

Code-named Alverston, the chip is a phase-change memory device. Intel demonstrated a 128-bit sample of the chip at IDF.

Phase-change Random Access Memory uses a material that turns crystalline when heated. The clrystalline bits represent the logical "1" in the binary system of computers, while amorphous areas (bits) represent logical "0"

PRAM is claimed to be scalable than any other memory architecture being researched, featuring the fast processing speed of RAM for its operating functions combined with the non-volatile features of flash memory for storage.

A key advantage in PRAM is its fast performance. Because PRAM can rewrite data without having to first erase data previously accumulated, it is 30-times faster than conventional flash memory. PRAM is also expected to have at least 10-times the life span of flash memory. Moreover, it requires 20 percent fewer process steps to produce than those used in the manufacturing of NOR flash memory.

The phase-change memory concept has been discussed for years now. Intel and Samsung now expect that it will become a non-volatile memory successor to flash memory. Samsung unveiled a 512M-Megabit (Mb) device at its sixth annual press conference in Seoul last September.


Previous
Next
Penryn 3.33GHz Quad-Core Benchmarks Released        All News        HD DVD Claims Sales Milestone
Penryn 3.33GHz Quad-Core Benchmarks Released     PC Parts News      Fujitsu Starts Volume Production of 2 Mbit FRAM Chips

Get RSS feed Easy Print E-Mail this Message

Related News
Intel Highlights Its Wireless Computing Plans
Intel, Chunghwa Telecom Team up on Internet of Things
Avago to Sell LSI's Networking Business to Intel
Intel's Wearable Devices To Help Parkinson's Disease Research
Intel Discloses Newest Microarchitecture and 14 Nanometer Manufacturing
Intel Offers Software Kits For Designers Of Wearable Devices
Researchers Create Ultra-dense Memory Using Conventional Methods
New Intel Solid-State Drive Pro 2500 Series Packs SK Hynix Flash And Brings Trusted Security Features
New Intel Haswell CPUs Released
Intel to $60 Ship Galileo Gen2 Computer Next Month
Intel Reports Second-Quarter Revenue of $13.8 billion
Intel Chipsets To Support PCIe 3.0

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .