Fujitsu today announced the availability of its 2 Megabit (Mbit) FRAM memory chips, the largest capacity FRAM in volume production in the world.
The two Ferroelectric Random Access Memory (FRAM) memory products, MB85R2001 and MB85R2002, have the characteristics of FRAM which is a non-volatile memory that features high-speed data writing, low power consumption, and which can endure a high number of write cycles.
Compared to conventional battery-backup SRAMs, using these new FRAM products from Fujitsu make it unnecessary to rely on a battery for data retention, while also enabling simplification of production processes and maintenance tasks, and reduction of material waste.
FRAM is a non-volatile memory that uses a ferroelectric film as the capacitor for data retention. Data is held even without a power supply. Features strengths of both ROM and RAM, such as fast writing speed, low power consumption, and endurance of a high number of write cycles. It is also referred to as FeRAM.