Friday, January 30, 2015
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Jolla Tablet Returns to Indiegogo With A 64GB Version
BT Sees Ultrafast Broadband Not Coming Earlier Than 2025
Google To Change Privacy Policy After UK's Watchdog Investigation
HDDs Shipments Increased In 2014
FCC To Fine AT&T For Unathorized Operation Of Wireless Stations
Google Reports Increased Profit
Facebook Introduces Place Tips in News Feed
AMD Cuts Prices Of Radeon Graphics Card To Cash On GTX 970 Memory Furor
Active Discussions
Writing Audio files on DVDs ?
Need major help with Gigabeat
New match-3 puzzle game launch now!
Rimage 2000i
Sound card for my Laptop
hello
full screen wide screen
Hi
 Home > News > PC Parts > TSMC Ac...
Last 7 Days News : SU MO TU WE TH FR SA All News

Friday, March 09, 2007
TSMC Achieves 65 Nanometer Embedded DRAM Milestone


Taiwan Semiconductor Manufacturing Company announced the foundry industry?s first functional 65nm embedded DRAM customer product.

The product contains millions of DRAM bits and was silicon verified first time right.

TSMC achieved 65nm product production in the second quarter last year. The company has also been in 90nm embedded DRAM production since the first quarter of 2006.

TSMC?s 65nm embedded DRAM process and IP provide a higher bandwidth, lower power consumption, and a close to 50% smaller cell and macro size than previous high density memory generations.

The 65nm embedded DRAM?s higher bandwidth is ideal for game console, high-end networking, digital consumer, and multimedia processors. It consumes less active and stand-by power than alternative high density memory technology while eliminating the need to power up I/Os.

TSMC 65nm embedded DRAM uses a low thermal budget module that can be added to the company?s standard CMOS process. It is compatible with all 65nm logic libraries making it an efficient process for IP reuse. The embedded DRAM design features improved retention time and special power saving options for low power applications including sleep mode, partial power cut-off and on-chip temperature compensation.

The 65nm embedded DRAM process is built on up to 10 metal layers using copper low-k interconnect and nickel silicide transistor interconnect. It features a cell size less than a quarter of its SRAM counterpart, and macro densities ranging from 4Mbits to 256Mbits.


Previous
Next
Court Rules for Dell, Microsoft in Alcatel-Lucent Case        All News        New Medium Enterprises Showcases HD VMD PC Products At Media-Tech
Fujitsu Delivers 160GB 2.5-inch SATA Hard Disk Drive     PC Parts News      Samsung Announces Its Newest Ultra- Mobile PC Q1P for Windows Vista

Get RSS feed Easy Print E-Mail this Message

Related News
TSMC Selling Sold ASML Stake
TSMC Sells LED Unit to Epistar
TSMC Chairman Sees Technical Hurdles In keeping Up With Moore's Law
TSMC To Make Intel's SoFIA Handset Chips
TSMC 16FinFET Plus Process Achieves Risk Production Milestone
TSMC Said To Make New iPad Processor
ARM and TSMC Unveil Roadmap for 64-bit ARM-based Processors on 10FinFET Process
TSMC and ARM Announce 16nm FinFET Silicon with 64-bit ARM big.LITTLE Technology
TSMC Launches Ultra-Low Power Technology Platform for IoT and Wearable Devices
TSMC Delivers First 16FinFET Networking Processor
TSMC Acquires EUV Machines For 10nm Chips
TSMC 28HPC Process Enters Volume Production

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2015 - All rights reserved -
Privacy policy - Contact Us .