Wednesday, November 22, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
FCC Chief's Proposal Reverses the Net netruality Rules
Facebook Messenger Gets Support for 4K Photos
Broadcom Announces 7nm IP for ASICs in Deep Learning and Networking Applications
Justice Department Sues to Stop AT&T - Time Warner Deal
Apple Removes Skype and Other Apps in China
Android Collects Android Users' Locations Using Cell-tower Data
GPU Shipments in Q3: AMD Increased 8 percent, Nvidia Increased 30 Percent
Samsung Says New SZ985 Z-NAND SSD Offers Ultra-Low Latency and High Throughput
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > TSMC Ac...
Last 7 Days News : SU MO TU WE TH FR SA All News

Friday, March 09, 2007
TSMC Achieves 65 Nanometer Embedded DRAM Milestone


Taiwan Semiconductor Manufacturing Company announced the foundry industry?s first functional 65nm embedded DRAM customer product.

The product contains millions of DRAM bits and was silicon verified first time right.

TSMC achieved 65nm product production in the second quarter last year. The company has also been in 90nm embedded DRAM production since the first quarter of 2006.

TSMC?s 65nm embedded DRAM process and IP provide a higher bandwidth, lower power consumption, and a close to 50% smaller cell and macro size than previous high density memory generations.

The 65nm embedded DRAM?s higher bandwidth is ideal for game console, high-end networking, digital consumer, and multimedia processors. It consumes less active and stand-by power than alternative high density memory technology while eliminating the need to power up I/Os.

TSMC 65nm embedded DRAM uses a low thermal budget module that can be added to the company?s standard CMOS process. It is compatible with all 65nm logic libraries making it an efficient process for IP reuse. The embedded DRAM design features improved retention time and special power saving options for low power applications including sleep mode, partial power cut-off and on-chip temperature compensation.

The 65nm embedded DRAM process is built on up to 10 metal layers using copper low-k interconnect and nickel silicide transistor interconnect. It features a cell size less than a quarter of its SRAM counterpart, and macro densities ranging from 4Mbits to 256Mbits.


Previous
Next
Court Rules for Dell, Microsoft in Alcatel-Lucent Case        All News        New Medium Enterprises Showcases HD VMD PC Products At Media-Tech
Fujitsu Delivers 160GB 2.5-inch SATA Hard Disk Drive     PC Parts News      Samsung Announces Its Newest Ultra- Mobile PC Q1P for Windows Vista

Get RSS feed Easy Print E-Mail this Message

Related News
Apple Praises TSMC's Investments, Says iPhones Will be AI an Platform
TSMC Raises Forecasts for 2017 Due to 10nm Demand, Outlines 7 and 5nm Roadmap
TSMC Chairman Dr. Morris Chang to Retire
TSMC to Build 3nm Fab in Taiwan
Globalfoundries Asks EU to Probe TSMC
TSMC Updates its Roadmap, Talks About First 7nm Chips and EUV Migration
TSMC InFO packaging Enters Second Generation
TSMC Q2 Sales Slowed as Industry Expects the iPhone Launch
Samsung and TSMC Are Playing Catch-up to Make the Smallest Chip
Samsung Foundry Focuses on 6nm Process to Beat TSMC
Qualcomm Turns to TSMC Over Samsung For 7nm Chips
TSMC Remains Open to New Businesses, Despite Strong Growth

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .