Sunday, November 23, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Samsung Files ITC Complaint Against Nvidia
Europe To Ask Google Unlink Its Commercial And Search Services
Streaming TV Service Aereo Files for Bankruptcy
Square Launches Cash Register Service
Call of Duty: Advanced Warfare is the Biggest Entertainment Launch of 2014
Intel-Micron 3D NAND To Have 32 Layers, 256Gb Per Die
Intel To Release Chromecast-like Thumb-sized PCs
Google Contributor Lets You Pay And And See No Ads In Your Favorite Sites
Active Discussions
cdrw trouble
CDR for car Sat Nav
DVD/DL for Optiarc 7191S at 8X
Copied dvd's say blank in computer only
Made video, won't play back easily
New Features In Firefox 33
updated tests for dvd and cd burners
How to generate lots of different CDs quickly
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Thursday, March 01, 2007
Samsung Begins Production of DDR2 Memory Using 60nm-Class Technology


Use of the new process technology is a significant milestone in that it increases production efficiency by 40 percent over the 80nm process technology deployed in DRAM fabrication since early 2006, and offers twice the productivity of 90nm general process technology.

Ample market availability of 1Gb DRAM will further increase the demand for large density DRAMs, especially as the new premium Vista operating system imposes a DRAM requirement of at least 1Gigabyte (GB). Samsung's extensive line up of 60nm 1Gb DRAM-based modules includes 512MB, 1GB and 2GB densities supporting either 667Mbps or 800Mbps speeds with customer validation.

Samsung's continuous technology migration below 90nm has relied heavily on the company's extensive use of three-dimensional (3D) transistor technologies to build increasingly smaller chips, a fundamentally unique approach toward finer circuit designs and higher yields. One of the key technologies involved in the development of Samsung's 3D transistor is a recess channel array transistor (RCAT) that actually builds the DRAM cell three-dimensionally to minimize its size while increasing its density.

RCAT technology doubles the refresh cycle, which is critical for enabling efficient fabrication on a nanometer-scale. Samsung has been utilizing RCAT for DRAM fabrication from 90nm. This key 3D technology is expected to enable DRAM fabrication to 50nm and lower.

In addition to its 60nm process technology innovation, Samsung's use of metal-insulator metal (MIM) for its capacitors provides enhanced data storage in sub-70nm designs

Furthermore, the use of a recently-announced selective epitaxial growth (SEG) technology provides for a broader electron channel, and optimizes the speed of each chip's electrons to reduce power consumption and enable higher performance.


Previous
Next
New AMD Chipset Integrates ATI Graphics and HDMI        All News        DVD Forum Celebrates 10th Anniversary
New AMD Chipset Integrates ATI Graphics and HDMI     PC Parts News      Corsair Launched Flash Voyager GT USB Drives

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Files ITC Complaint Against Nvidia
Samsung Loses Bid Against Microsoft
Intel Labs Showcase Low-energy DRAM Memory
Samsung To Offer More Affordable Phones In 2015
Samsung To Make Future Application Processors For Apple: report
Samsung Opens Pre-orders For Black Friday Deals
Samsung Challenges Apple iBeacon With Proximity
Samsung Introduces Gear VR Innovator Edition, 3D capturing Project, New Advanced S Pen, SIMBAND Fitness Wearable
Samsung To Use New UFS memory In Upcoming Flagship Smartphone
Samsung Responds To Nvidia With Chip Patents Lawsuit
Apple Becomes The Most Powerful Mobile Brand In China: survey
Samsung Debuts New Flip-phone In korea

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .