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Monday, December 18, 2006
Hynix Develops 800 MHz Memory Module


Hynix Semiconductor said Sunday it has developed the world's first 800 MHz memory module using 60-nano 1GB DDR2 DRAM.

The chipmaker received approval for its 60-nano DRAM chip from Intel in October and has now developed the 60-nano DDR2 memory module this time, passing Intel's Advanced Validation Lab (AVL) test. The final test result will be officially announced early next year. The new memory chip comes in two types: one with a speed of 800 MHz and the other with a speed of 667 MHz. It also helps hike productivity by a whopping 50 percent, the chipmaker says. In addition, such cutting edge technologies as a "three-dimensional" transistor and three-layered metal allocation boost storage capacity and processing speeds.

Three-dimensional transistor technology makes transistors multi-dimensional to reduce electricity leakage and improve data storage capacity, and the three-layered metal allocation technology increases the number of metal chip layers from two to three to increase speed.

Hynix is to start mass production in the first half of next year and use the new memory chip in making memory chips for high-capacity PCs, graphic chips and mobile chips.


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