Kingston today announced it is first to offer a full production launch of 2-GB 533 MHz and 667 MHz ValueRAM SO-DIMMs concurrent with the release of new 800 MHz ValueRAM SO-DIMMs.

The new larger capacity, high-performance memory modules are designed to meet the growing demands of notebook computers and miniPCs; the faster speed SO-DIMMs are in preparation for the industry migration to the 800 MHz platform.

"With the advancements in mobile and small form factor PCs, the need for high density SO-DIMM memory is increasing," said Mark Tekunoff, senior technology manager, Kingston. "Combining Kingston's 2-GB SO-DIMM memory with AOpen miniPCs or notebooks with partners like MSI creates an ideal computing platform for customers demanding high performance," added Tekunoff.

"The new Kingston ValueRAM 2-GB SO-DIMMs are designed to deliver the premium experience for laptop users. When the Microsoft Windows Vista operating system launches, more users will choose to move to at least 2 GB of system memory to gain improved productivity, enhanced visual quality and visual style. MSI and Kingston are working closely in product evaluation and testing and we are always on the forefront to deliver products with the best quality, reliability and compatibility to the whitebook channels," said Daniel Wang, vice president, Channel Business Development Division, MSI.

"Kingston has developed an industry-leading quality process to ensure that Kingston memory delivers superior quality, performance, and compatibility with computing systems," said Chris Liu, Vice President of Product and Marketing, AOpen America, Inc. "Kingston's new 2-GB SO-DIMM is a great inclusion in its product family - particularly for AOpen's miniPC and the Mini-ITX motherboard products."

ValueRAM 2-GB 533 MHz and 667 MHz SO-DIMM Features:

* 1.8 Volts operation, delivering 50% less power usage.
* Memory signal termination inside the memory chip prevents reflected signal transmission errors.
* CAS Latency: 4, 5

ValueRAM 800 MHz SO-DIMM Features:

* 1.8 Volts operation, delivering 50% less power usage.
* Memory signal termination inside the memory chip prevents reflected signal transmission errors.
* CAS Latency: 5