Monday, October 24, 2016
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
AT&T to Acquire Time Warner For $85.4B
Internet Disruptions Were Caused By Attacked Connected Devices
TSMC, GlobalFoundries/Samsung To Present Their 7nm Platforms At IEDM
Hon Hai Gains Apple Mac Orders From Quanta
AT&T In Advanced Talks With Time Warner On Merger
LG's Next Flagship G6 Smartphone Won't be Modular
Samsung to Exchange Galaxy Note 7 with New Galaxy S8
Qualcomm Said to Be Near A Deal With NXP
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > Consumer Electronics > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, August 02, 2006
Toshiba's new LBA-NAND Flash Memory to Launch in Global Market

Toshiba today announced that it has brought logical block addressing (LBA) to NAND Flash memory, and that it would launch LBA-NAND, a new line-up of high-capacity devices integrating the new addressing method.

LBA-NAND are designed for use in mobile consumer products, such as digital audio players and personal media players, and will support manufacturers in developing products that can take full advantage of advances in NAND Flash memory capacity while minimizing development costs. Toshiba will start to release samples of the new NAND Flash from August 2006.

NAND Flash memory currently uses the physical address access method that defines each physical page of a memory, from the chip to the block, to the page and down to the cell. Product manufacturers have to develop host side and driver specifications that can recognize and accommodate this physical addressing, and must bear the R&D costs for developing new product specifications and drivers to absorb advances in NAND Flash memory capacity.

The logical address access method of LBA assigns each cell a unique address that is not geometry dependent. The first cell is simply 0, and numbering continues to cover every cell. Memory increases can be accommodated by assigning a new address to each cell. This approach also allows block management, error correction (ECC process) and wear-leveling, all of which are conventionally controlled by the host side, to be handled on the memory side by the LBA-NAND controller. LBA-NAND are also compliant with the standard NAND Flash interface. As a result, LBA-NAND supports developers in minimizing development costs and improving time to market for new and upgraded products.

European iTunes Music Store Tops 200 Million Songs Sold        All News        Sony Media Software Unveils Blu-print for Advanced Blu-ray Disc Authoring
Panasonic Delivering New 50" And 42" Professional HD Plasma Displays     Consumer Electronics News      Philips Introduces Integrated ESD Protection chip with full HDMI 1.3 compliance

Get RSS feed Easy Print E-Mail this Message

Related News
Investors Sue Toshiba Over Accounting Scandal
Toshiba Starts Testing System For Future Self-driving Cars
NAND Flash Prices on Upswing in Fourth Quarter Due To Supply Shortage
Samsung to Start Making 64-layer 3-D Flash memory for Smartphones
Toshiba, Tohoku Electric and Iwatani Start Study of World?s Largest Hydrogen Energy System
Toshiba Introduces the Value-oriented OCZ TL100 SATA SSD Series
Toshiba Expands 24nm SLC Flash Family with 16Gb Offering
Toshiba Introduces the OCZ VX500 SATA SSD Series
Toshiba to Implement Eyefi Connected Features in Next FlashAir SD Cards
Micron Announces QuantX Branding For 3D XPoint Memory, Releases 3D NAND flash for Mobile Devices
Toshiba Debuts Flashmatrix Technology
Toshiba Announces New BG SSDs with 3-Bit-Per-Cell TLC BiCS FLASH

Most Popular News
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .