Micron Technology, Inc., and Intel Corporation today announced they are sampling the industry's first NAND flash memory built on industry-leading 50 nanometer (nm) process technology.
The samples were manufactured through IM Flash Technologies, a joint development and
manufacturing venture from Micron and Intel. Both companies are sampling 4 gigabit (Gb)
devices now, with plans to mass produce a range of densities on the 50nm node in 2007.
High density NAND flash devices are used in a range of computing and consumer
electronics applications such as digital music players, removable storage and handheld
communications devices. According to industry research forecasts, the NAND market
segment is estimated to reach $13 to $16 billion in 2006 and grow to approximately $25
to $30 billion by 2010.
Micron and Intel formed IM Flash Technologies (IMFT) in January to manufacture NAND
flash memory products for the two companies. Micron is currently supplying the venture
NAND flash from its Boise fabrication facilities, and Micron's 300 mm facility in
Manassas, Va., will be online later this year to supply IMFT with NAND. Meanwhile, the
Lehi, Utah facility that is dedicated to IMFT and serves as its headquarters is expected
to be online producing NAND early next year.