Tuesday, October 21, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
China Denies Apple's iCloud Hack Allegations
Samsung Galaxy KNOX Devices Approved for U.S. Government Classified Use
iPhone 6 Demand Help ARM's Growth
SK Hynix Develops High Density 16GB NVDIMM
Samsung Mass Produces 8-Gigabit DDR4 Based on 20 Nanometer Process Technology
Strong iPhone, Mac And App Store Sales Drive Apple's Record September Quarter Revenue And Earnings
Apple iOS 8.1 Available For Download
E FUN To Relase $179 Windows tablet
Active Discussions
Copied dvd's say blank in computer only
How to generate lots of different CDs quickly
Yamaha CRW-F1UX
help questions structure DVDR
Made video, won't play back easily
Questions durability monitor LCD
Questions fungus CD/DVD Media, Some expert engineer in optical media can help me?
CD, DVD and Blu-ray burning for Android in development
 Home > News > PC Parts > NEC Dev...
Last 7 Days News : SU MO TU WE TH FR SA All News

Friday, July 14, 2006
NEC Develops MRAM Cell Technology


NEC has succeeded in developing new magnetoresistive random access memory (MRAM) cell technology suitable for high speed memory macro embedded in next generation system LSIs.

The newly developed cell technology includes three key elements; a 2T1MTJ (two transistors and one magnetoresistive tunneling junction) cell structure to accelerate write mode cycle time, a 5T2MTJ cell structure to accelerate read mode cycle time and a write-line-inserted MTJ to reduce write current. The new cell technology realizes added-value, non-volatile MRAM macros that can be substituted for SRAM (static random access memory) macros embedded in system LSIs.

Features of the newly developed elements:



- 200MHz random access write operation: Elimination of the upper limit of the writing current by a 2T1MTJ cell enables high speed write operation. In conventional MRAM memory cells, writing current must be within upper and lower limits (note 1). This complicates the write current source circuit and it thus cannot operate at over 100MHz.

- 500MHz random access read operation: Intra-cell-signal amplification in a 5T2MTJ cell enables high speed read operation. Cell current signal is amplified and transformed into voltage signal in each cell. In conventional MRAM memory cells, a small reading current difference signal through the bit line with large parasitic capacitance makes sense amplifier circuits complicated. These kinds of circuits cannot operate at over 200MHz. 3. Reduction of writing current down to 1/3: A write-line-inserted MTJ structure reduces writing current to 1/3 as compared with conventional MTJ structure writing currents. This small current reduces MRAM cell size.

Recently, the area ratio of memory macros embedded in system LSIs has increased. Such memory macros can be classified into two types; high speed RAM (Random Access Memory) used temporarily during data processing and NVM (Non Volatile Memory) used for data retention during power-off and/or stand-by state. To overcome this issue, MRAM technology, which is expected to possess "unified memory" (boasting the merits of both types of memory), has been developed. However, it is difficult for conventional MRAM technology to enable over 100MHz of random-access-operation frequency, although speed of this level is necessary for next generation system LSIs.

To realize "unified memory," NEC has been developing MRAM technology to accelerate both read and write operation speeds, and has succeeded in developing MRAM cell technology suitable for a high speed memory macro embedded in next generation system LSIs.

NEC's research is partially supported by the New Energy and Industrial Technology Development Organization's (NEDO) MRAM technology development project for realization of high-speed and non-volatile memory macro embedded in system LSIs.


Previous
Next
Sony-Samsung Unit to Make Most Advanced LCD Panels        All News        OCZ Announces the PC2-7200 Special Ops Edition
Chipmakers Sued Over Price-fix Charges     PC Parts News      OCZ Announces the PC2-7200 Special Ops Edition

Get RSS feed Easy Print E-Mail this Message

Related News
NEC Technology Helps Take Less Stressful Blood Pressure Measurements
TDK Showcases STT-MRAM Prototype At Ceatec
Everspin to Demo Spin-Torque MRAM at Flash Memory Summit 2014
Samsung, Intel, Dell, Boradcom Team Up On Standards For Internet of Things
Toshiba STT-MRAM Memory Reduces Power Consumption Of Processors
NEC Releases Face-authentication Software For PCs
Microsoft Reveals Kinect for Windows v2
Kinect for Windows SDK 1.8 Available
NEC Display Introduces 19-inch AccuSync Desktop Monitor with IPS Panel
NEC To Stop Making Smartphones
Researchers Use Kinect As Digital Assistance To Sign-Language Users
NEC to Exit Smartphone biz: report

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .