Saturday, August 29, 2015
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Alienware Brings Liquid Cooling and Dynamic Overclocking to Holiday Lineup
Razer Launches Wildcat Xbox One Controller And Upgraded Nabu Smartband
Workstation Market Shippments Rebound In Q2
Google Will Help You Find Your Plumber
IFA 2015: What We Know So Far
Acer Liquid Z410 And Liquid Jade Z Phones Released
Huawei Honor Phones Coming To Europe
AMD Radeon R9 370X Graphics Card Launched In Asia
Active Discussions
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
How to burn a backup copy of The Frozen Throne
Help make DVDInfoPro better with dvdinfomantis!!!
Copied dvd's say blank in computer only
menu making
Optiarc AD-7260S review
 Home > News > PC Parts > Intel D...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, June 21, 2006
Intel Develops Tri-Gate Transistor for High-Volume Manufacturing


Intel Corp's research and development involving new types of transistors has resulted in further development of a tri-gate (3D) transistor for high-volume manufacturing.

Since these transistors improve performance and energy efficiency, the company expects tri-gate technology could become the basic building block for future microprocessors sometime beyond the 45nm process technology node.

Planar (or flat) transistors were conceived in the late 1950s and have been the basic building block of chips since the dawn of the semiconductor industry. As semiconductor technology moves deeper into the realm of nanotechnology (dimensions smaller than 100nm), where some transistor features may consist of only a few layers of atoms, what was previously thought of as "flat" is now being designed in three dimensions for power characteristics. The company has created a way to use these three-dimensional, or tri-gate transistors in concert with other key semiconductor technologies.

Tri-gate transistors are said to offer lower leakage and consume much less power than today's planar transistors. Compared to today's 65nm transistors, integrated tri-gate transistors can offer a 45% increase in drive current (switching speed) or 50 times reduction in off-current, and 35% reduction in transistor switching power.


Previous
Next
Memorex Announces Blu-ray Discs        All News        Panasonic to Launch First Digital SLR in July
Intel Opens Third High-Volume 65nm Manufacturing Facility     PC Parts News      Asustek Selects Silicon Image's Storage Processor for its Digital Home PC Motherboard

Get RSS feed Easy Print E-Mail this Message

Related News
Intel Talks About Skylake At IDF
Intel Outlines Expanded RealSense And Optane Technologies At IDF
Intel To Bring Xeon Processors to Notebook PCs
Researcher Discovers Flaw in Intel Processors
Intel Teases With Skylake Processor Family and Z170 Express Chipset Debut
Intel Releases 3rd Gen Wireless-AC 8260 for Windows 10
Intel Skylake Processors To Provide Significant Graphics Boost
Intel And Rackspace To Promote The Benefits of the Cloud Through New Initiative
Intel Hits Q2 Financial Target, Pushes Back Transition to 10nm
Intel President To Leave The Company
Intel Compute Stick Comes With Ubuntu
Intel Eyes Future of Wearables With Acquisition Of Recon

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2015 - All rights reserved -
Privacy policy - Contact Us .